P

Inventor

NISHIGUCHI TARO

JP37 patents
⚠️ This page may combine multiple inventors who share the name “NISHIGUCHI TARO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SUMITOMO ELECTRIC INDUSTRIES

25 patents
US11530491B2Dec 20, 2022

Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device

SUMITOMO ELECTRIC INDUSTRIES3 citations73
US10770550B2Sep 8, 2020

Silicon carbide epitaxial substrate having grooves extending along main surface and method of manufacturing silicon carbide semiconductor device

SUMITOMO ELECTRIC INDUSTRIES1 citations73
US10490634B2Nov 26, 2019

Silicon carbide epitaxial substrate having a silicon carbide layer and method of manufacturing silicon carbide semiconductor device

SUMITOMO ELECTRIC INDUSTRIES3 citations73
US9728628B2Aug 8, 2017

Silicon carbide semiconductor device and method for manufacturing same

SUMITOMO ELECTRIC INDUSTRIES3 citations73
US10612160B2Apr 7, 2020

Epitaxial wafer and method for manufacturing same

SUMITOMO ELECTRIC INDUSTRIES2 citations71
US9966249B2May 8, 2018

Silicon carbide semiconductor substrate and method for manufacturing same

SUMITOMO ELECTRIC INDUSTRIES3 citations71
US9957641B2May 1, 2018

Epitaxial wafer and method for manufacturing same

SUMITOMO ELECTRIC INDUSTRIES2 citations71
US10396163B2Aug 27, 2019

Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device

SUMITOMO ELECTRIC INDUSTRIES3 citations70
US11242618B2Feb 8, 2022

Silicon carbide substrate and method of manufacturing the same

SUMITOMO ELECTRIC INDUSTRIES0 citations62
US11053607B2Jul 6, 2021

Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device

SUMITOMO ELECTRIC INDUSTRIES1 citations62
US11004941B2May 11, 2021

Silicon carbide epitaxial substrate having grooves extending along main surface and method of manufacturing silicon carbide semiconductor device

SUMITOMO ELECTRIC INDUSTRIES0 citations62
US10229836B2Mar 12, 2019

Method for manufacturing silicon carbide epitaxial substrate, silicon carbide epitaxial substrate, method for manufacturing silicon carbide semiconductor device, and silicon carbide semiconductor device

SUMITOMO ELECTRIC INDUSTRIES1 citations62
US9057147B2Jun 16, 2015

Silicon carbide epitaxial substrate and method of manufacturing silicon carbide epitaxial substrate

SUMITOMO ELECTRIC INDUSTRIES2 citations61
US11984480B2May 14, 2024

Silicon carbide epitaxial substrate

SUMITOMO ELECTRIC INDUSTRIES1 citations56
US12575342B2Mar 10, 2026

Silicon carbide epitaxial substrate and method of manufacturing silicon carbide epitaxial substrate

SUMITOMO ELECTRIC INDUSTRIES0 citations52
US10741683B2Aug 11, 2020

Semiconductor device and method for manufacturing same

SUMITOMO ELECTRIC INDUSTRIES0 citations52
US10734222B2Aug 4, 2020

Semiconductor stack

SUMITOMO ELECTRIC INDUSTRIES0 citations52
US10580647B2Mar 3, 2020

Semiconductor stack

SUMITOMO ELECTRIC INDUSTRIES0 citations52
US10395924B2Aug 27, 2019

Semiconductor stack

SUMITOMO ELECTRIC INDUSTRIES0 citations52
US9583571B2Feb 28, 2017

Dislocation in SiC semiconductor substrate

SUMITOMO ELECTRIC INDUSTRIES0 citations52
US9450054B2Sep 20, 2016

Dislocation in SiC semiconductor substrate

SUMITOMO ELECTRIC INDUSTRIES0 citations52
US8912550B2Dec 16, 2014

Dislocations in SiC semiconductor substrate

SUMITOMO ELECTRIC INDUSTRIES0 citations52
US9631296B2Apr 25, 2017

Method of manufacturing silicon carbide substrate

SUMITOMO ELECTRIC INDUSTRIES0 citations50
US12428752B2Sep 30, 2025

Silicon carbide epitaxial substrate

SUMITOMO ELECTRIC INDUSTRIES0 citations44
US9777404B2Oct 3, 2017

Method for manufacturing silicon carbide epitaxial substrate, and silicon carbide epitaxial substrate

SUMITOMO ELECTRIC INDUSTRIES0 citations40

NISHIGUCHI TARO

7 patents

HARADA SHIN

2 patents

HORI TSUTOMU

2 patents

SASAKI MAKOTO

1 patent