Inventor
NISHIGUCHI TARO
JP37 patents
⚠️ This page may combine multiple inventors who share the name “NISHIGUCHI TARO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SUMITOMO ELECTRIC INDUSTRIES
25 patentsUS11530491B2Dec 20, 2022
Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device
SUMITOMO ELECTRIC INDUSTRIES3 citations73
US10770550B2Sep 8, 2020
Silicon carbide epitaxial substrate having grooves extending along main surface and method of manufacturing silicon carbide semiconductor device
SUMITOMO ELECTRIC INDUSTRIES1 citations73
US10490634B2Nov 26, 2019
Silicon carbide epitaxial substrate having a silicon carbide layer and method of manufacturing silicon carbide semiconductor device
SUMITOMO ELECTRIC INDUSTRIES3 citations73
US9728628B2Aug 8, 2017
Silicon carbide semiconductor device and method for manufacturing same
SUMITOMO ELECTRIC INDUSTRIES3 citations73
US10612160B2Apr 7, 2020
Epitaxial wafer and method for manufacturing same
SUMITOMO ELECTRIC INDUSTRIES2 citations71
US9966249B2May 8, 2018
Silicon carbide semiconductor substrate and method for manufacturing same
SUMITOMO ELECTRIC INDUSTRIES3 citations71
US9957641B2May 1, 2018
Epitaxial wafer and method for manufacturing same
SUMITOMO ELECTRIC INDUSTRIES2 citations71
US10396163B2Aug 27, 2019
Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device
SUMITOMO ELECTRIC INDUSTRIES3 citations70
US11242618B2Feb 8, 2022
Silicon carbide substrate and method of manufacturing the same
SUMITOMO ELECTRIC INDUSTRIES0 citations62
US11053607B2Jul 6, 2021
Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device
SUMITOMO ELECTRIC INDUSTRIES1 citations62
US11004941B2May 11, 2021
Silicon carbide epitaxial substrate having grooves extending along main surface and method of manufacturing silicon carbide semiconductor device
SUMITOMO ELECTRIC INDUSTRIES0 citations62
US10229836B2Mar 12, 2019
Method for manufacturing silicon carbide epitaxial substrate, silicon carbide epitaxial substrate, method for manufacturing silicon carbide semiconductor device, and silicon carbide semiconductor device
SUMITOMO ELECTRIC INDUSTRIES1 citations62
US9057147B2Jun 16, 2015
Silicon carbide epitaxial substrate and method of manufacturing silicon carbide epitaxial substrate
SUMITOMO ELECTRIC INDUSTRIES2 citations61
US11984480B2May 14, 2024
Silicon carbide epitaxial substrate
SUMITOMO ELECTRIC INDUSTRIES1 citations56
US12575342B2Mar 10, 2026
Silicon carbide epitaxial substrate and method of manufacturing silicon carbide epitaxial substrate
SUMITOMO ELECTRIC INDUSTRIES0 citations52
US10741683B2Aug 11, 2020
Semiconductor device and method for manufacturing same
SUMITOMO ELECTRIC INDUSTRIES0 citations52
US10734222B2Aug 4, 2020
Semiconductor stack
SUMITOMO ELECTRIC INDUSTRIES0 citations52
US10580647B2Mar 3, 2020
Semiconductor stack
SUMITOMO ELECTRIC INDUSTRIES0 citations52
US10395924B2Aug 27, 2019
Semiconductor stack
SUMITOMO ELECTRIC INDUSTRIES0 citations52
US9583571B2Feb 28, 2017
Dislocation in SiC semiconductor substrate
SUMITOMO ELECTRIC INDUSTRIES0 citations52
US9450054B2Sep 20, 2016
Dislocation in SiC semiconductor substrate
SUMITOMO ELECTRIC INDUSTRIES0 citations52
US8912550B2Dec 16, 2014
Dislocations in SiC semiconductor substrate
SUMITOMO ELECTRIC INDUSTRIES0 citations52
US9631296B2Apr 25, 2017
Method of manufacturing silicon carbide substrate
SUMITOMO ELECTRIC INDUSTRIES0 citations50
US12428752B2Sep 30, 2025
Silicon carbide epitaxial substrate
SUMITOMO ELECTRIC INDUSTRIES0 citations44
US9777404B2Oct 3, 2017
Method for manufacturing silicon carbide epitaxial substrate, and silicon carbide epitaxial substrate
SUMITOMO ELECTRIC INDUSTRIES0 citations40
NISHIGUCHI TARO
7 patentsUSD655256SMar 6, 2012
Semiconductor substrate
NISHIGUCHI TARO20 citations92
USD651991SJan 10, 2012
Semiconductor substrate
NISHIGUCHI TARO25 citations92
USD651992SJan 10, 2012
Semiconductor substrate
NISHIGUCHI TARO26 citations92
US8435866B2May 7, 2013
Method for manufacturing silicon carbide substrate
NISHIGUCHI TARO11 citations83
US9090992B2Jul 28, 2015
Method of manufacturing single crystal
NISHIGUCHI TARO0 citations52
US9082621B2Jul 14, 2015
Method for manufacturing silicon carbide single crystal, and silicon carbide substrate
NISHIGUCHI TARO0 citations41
US8629457B2Jan 14, 2014
Light-emitting device
NISHIGUCHI TARO0 citations41