Inventor · disambiguated record
Jeffrey A. Shields
Also filed as: SHIELDS JEFFREY · SHIELDS JEFFREY A · SHIELDS JEFFREY ALLAN
89 granted patents·7 pending applications·1,126 citations·filing 1997–2017
99Inventor score
Files withADVANCED MICRO DEVICES INC62SPANSION LLC8ADESTO TECHNOLOGIES CORP7MICROCHIP TECH INC6ADESTO TECH CORP2
Top patents by PatentIndex Score
96 records- 0193US8941089B2Resistive switching devices and methods of formation thereofADESTO TECHNOLOGIES CORP·Filed 2013·Granted Jan 27, 2015·18 cites·15 claims
- 0293US8866122B1Resistive switching devices having a buffer layer and methods of formation thereofLEE WEI TI·Filed 2012·Granted Oct 21, 2014·18 cites·36 claims
- 0393US7776682B1Ordered porosity to direct memory element formationSPANSION LLC·Filed 2005·Granted Aug 17, 2010·32 cites·20 claims
- 0492US6376877B1Double self-aligning shallow trench isolation semiconductor and manufacturing method thereforADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 23, 2002·49 cites·9 claims
- 0590US8895953B1Programmable memory elements, devices and methods having physically localized structureSHIELDS JEFFREY ALLAN·Filed 2012·Granted Nov 25, 2014·19 cites·4 claims
- 0690US6617215B1Memory wordline hard maskADVANCED MICRO DEVICES INC·Filed 2002·Granted Sep 9, 2003·47 cites·20 claims
- 0789US8049334B1Buried silicide local interconnect with sidewall spacers and method for making the sameADVANCED MICRO DEVICES INC·Filed 2010·Granted Nov 1, 2011·8 cites·20 claims
- 0886US6479348B1Method of making memory wordline hard mask extensionADVANCED MICRO DEVICES INC·Filed 2002·Granted Nov 12, 2002·31 cites·20 claims
- 0984US6774432B1UV-blocking layer for reducing UV-induced charging of SONOS dual-bit flash memory devices in BEOLADVANCED MICRO DEVICES INC·Filed 2003·Granted Aug 10, 2004·31 cites·20 claims
- 1084US6653231B2Process for reducing the critical dimensions of integrated circuit device featuresADVANCED MICRO DEVICES INC·Filed 2001·Granted Nov 25, 2003·31 cites·20 claims
- 1183US6589709B1Process for preventing deformation of patterned photoresist featuresADVANCED MICRO DEVICES INC·Filed 2001·Granted Jul 8, 2003·31 cites·20 claims
- 1282US6709924B1Fabrication of shallow trench isolation structures with rounded corner and self-aligned gateADVANCED MICRO DEVICES INC·Filed 2002·Granted Mar 23, 2004·32 cites·21 claims
- 1380US9099633B2Solid electrolyte memory elements with electrode interface for improved performanceADESTO TECHNOLOGIES CORP·Filed 2013·Granted Aug 4, 2015·3 cites·16 claims
- 1479US6222761B1Method for minimizing program disturb in a memory cellMICROCHIP TECH INC·Filed 2000·Granted Apr 24, 2001·25 cites·16 claims
- 1578US8847192B2Resistive switching devices having alloyed electrodes and methods of formation thereofLEE WEI TI·Filed 2012·Granted Sep 30, 2014·5 cites·32 claims
- 1678US8368219B2Buried silicide local interconnect with sidewall spacers and method for making the sameADVANCED MICRO DEVICES INC·Filed 2011·Granted Feb 5, 2013·3 cites·20 claims
- 1778US7091088B1UV-blocking etch stop layer for reducing UV-induced charging of charge storage layer in memory devices in BEOL processingSPANSION LLC·Filed 2004·Granted Aug 15, 2006·26 cites·10 claims
- 1877US6630288B2Process for forming sub-lithographic photoresist features by modification of the photoresist surfaceADVANCED MICRO DEVICES INC·Filed 2001·Granted Oct 7, 2003·19 cites·15 claims
- 1977US6492257B1Water vapor plasma for effective low-k dielectric resist strippingADVANCED MICRO DEVICES INC·Filed 2000·Granted Dec 10, 2002·22 cites·31 claims
- 2077US6486506B1Flash memory with less susceptibility to charge gain and charge lossADVANCED MICRO DEVICES INC·Filed 2000·Granted Nov 26, 2002·25 cites·22 claims
- 2176US8022468B1Ultraviolet radiation blocking interlayer dielectricSPANSION LLC·Filed 2005·Granted Sep 20, 2011·7 cites·12 claims
- 2275US6153504AMethod of using a silicon oxynitride ARC for final metal layerADVANCED MICRO DEVICES INC·Filed 1999·Granted Nov 28, 2000·46 cites·13 claims
- 2374US6114766AIntegrated circuit with metal features presenting a larger landing area for viasADVANCED MICRO DEVICES INC·Filed 1997·Granted Sep 5, 2000·37 cites·27 claims
- 2473US7466591B2Method for programming and erasing an array of NMOS EEPROM cells that minimizes bit disturbances and voltage withstand requirements for the memory array and supporting circuitsMICROCHIP TECH INC·Filed 2006·Granted Dec 16, 2008·6 cites·6 claims
- 2573US6500768B1Method for selective removal of ONO layerADVANCE MICRO DEVICES INC·Filed 2000·Granted Dec 31, 2002·16 cites·6 claims
- 2673US6350696B1Spacer etch method for semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2000·Granted Feb 26, 2002·16 cites·3 claims
- 2772US9455037B2EEPROM memory cell with low voltage read path and high voltage erase/write pathMICROCHIP TECH INC·Filed 2014·Granted Sep 27, 2016·3 cites·26 claims
- 2872US7468296B1Thin film germanium diode with low reverse breakdownSPANSION LLC·Filed 2005·Granted Dec 23, 2008·4 cites·18 claims
- 2972US6522013B1Punch-through via with conformal barrier linerADVANCED MICRO DEVICES INC·Filed 1998·Granted Feb 18, 2003·44 cites·10 claims
- 3072US6245681B1Dual temperature nitride strip processADVANCED MICRO DEVICES INC·Filed 2000·Granted Jun 12, 2001·15 cites·12 claims
- 3172US5866945ABorderless vias with HSQ gap filled patterned metal layersADVANCED MICRO DEVICES INC·Filed 1997·Granted Feb 2, 1999·35 cites·6 claims
- 3271US6232635B1Method to fabricate a high coupling flash cell with less silicide seam problemADVANCED MICRO DEVICES INC·Filed 2000·Granted May 15, 2001·12 cites·6 claims
- 3370US9391270B1Memory cells with vertically integrated tunnel access device and programmable impedance elementADESTO TECHNOLOGIES CORP·Filed 2014·Granted Jul 12, 2016·2 cites·19 claims
- 3469US6236595B1Programming method for a memory cellMICROCHIP TECH INC·Filed 2000·Granted May 22, 2001·19 cites·13 claims
- 3568US6060384ABorderless vias with HSQ gap filled patterned metal layersADVANCED MICRO DEVICES INC·Filed 1998·Granted May 9, 2000·30 cites·18 claims
- 3667US7476604B1Aggressive cleaning process for semiconductor device contact formationADVANCED MICRO DEVICES INC·Filed 2005·Granted Jan 13, 2009·3 cites·8 claims
- 3766US6620717B1Memory with disposable ARC for wordline formationADVANCED MICRO DEVICES INC·Filed 2002·Granted Sep 16, 2003·10 cites·20 claims
- 3866US6274475B1Specialized metal profile for via landing areasADVANCED MICRO DEVICES INC·Filed 2000·Granted Aug 14, 2001·11 cites·22 claims
- 3965US6969654B1Flash NVROM devices with UV charge immunityADVANCED MICRO DEVICES INC·Filed 2000·Granted Nov 29, 2005·12 cites·5 claims
- 4064US11056646B2Memory device having programmable impedance elements with a common conductor formed below bit linesADESTO TECHNOLOGIES CORP·Filed 2016·Granted Jul 6, 2021·1 cites·17 claims
- 4164US7232765B1Utilization of a Ta-containing cap over copper to facilitate concurrent formation of copper vias and memory element structuresADVANCED MICRO DEVICES INC·Filed 2004·Granted Jun 19, 2007·11 cites·20 claims
- 4264US7135396B1Method of making a semiconductor structureADVANCED MICRO DEVICES INC·Filed 2004·Granted Nov 14, 2006·8 cites·20 claims
- 4364US6087724AHSQ with high plasma etching resistance surface for borderless viasADVANCED MICRO DEVICES INC·Filed 1998·Granted Jul 11, 2000·25 cites·11 claims
- 4463US7018896B2UV-blocking layer for reducing UV-induced charging of SONOS dual-bit flash memory devices in BEOL processingADVANCED MICRO DEVICES INC·Filed 2004·Granted Mar 28, 2006·9 cites·20 claims
- 4562US6083850AHSQ dielectric interlayerADVANCED MICRO DEVICES INC·Filed 1997·Granted Jul 4, 2000·22 cites·13 claims
- 4660US6667243B1Etch damage repair with thermal annealingADVANCED MICRO DEVICES INC·Filed 2002·Granted Dec 23, 2003·6 cites·11 claims
- 4760US6537866B1Method of forming narrow insulating spacers for use in reducing minimum component sizeADVANCED MICRO DEVICES INC·Filed 2000·Granted Mar 25, 2003·7 cites·21 claims
- 4859US10497868B2Memory elements having conductive cap layers and methods thereforADESTO TECHNOLOGIES CORP·Filed 2017·Granted Dec 3, 2019·1 cites·17 claims
- 4959US7817474B2Method for programming and erasing an array of NMOS EEPROM cells that minimizes bit disturbances and voltage withstand requirements for the memory array and supporting circuitsMICROCHIP TECH INC·Filed 2008·Granted Oct 19, 2010·3 cites·19 claims
- 5057US8089113B2Damascene metal-insulator-metal (MIM) devicePANGRLE SUZETTE K·Filed 2006·Granted Jan 3, 2012·1 cites·20 claims
Showing the top 50 of 96 patent records by PatentIndex Score.
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