Inventor
BENTLEY STEVEN J
US19 patents
⚠️ This page may combine multiple inventors who share the name “BENTLEY STEVEN J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GLOBALFOUNDRIES INC
14 patentsUS10510620B1Dec 17, 2019
Work function metal patterning for N-P space between active nanostructures
GLOBALFOUNDRIES INC126 citations98
US10192867B1Jan 29, 2019
Complementary FETs with wrap around contacts and method of forming same
GLOBALFOUNDRIES INC134 citations98
US9640636B1May 2, 2017
Methods of forming replacement gate structures and bottom and top source/drain regions on a vertical transistor device
GLOBALFOUNDRIES INC88 citations98
US9530863B1Dec 27, 2016
Methods of forming vertical transistor devices with self-aligned replacement gate structures
GLOBALFOUNDRIES INC68 citations97
US9530866B1Dec 27, 2016
Methods of forming vertical transistor devices with self-aligned top source/drain conductive contacts
GLOBALFOUNDRIES INC128 citations97
US9799751B1Oct 24, 2017
Methods of forming a gate structure on a vertical transistor device
GLOBALFOUNDRIES INC28 citations94
US10236292B1Mar 19, 2019
Complementary FETs with wrap around contacts and methods of forming same
GLOBALFOUNDRIES INC33 citations93
US10418368B1Sep 17, 2019
Buried local interconnect in source/drain region
GLOBALFOUNDRIES INC7 citations84
US8963259B2Feb 24, 2015
Device isolation in finFET CMOS
GLOBALFOUNDRIES INC5 citations83
US9368591B2Jun 14, 2016
Transistors comprising doped region-gap-doped region structures and methods of fabrication
GLOBALFOUNDRIES INC5 citations73
US10347745B2Jul 9, 2019
Methods of forming bottom and top source/drain regions on a vertical transistor device
GLOBALFOUNDRIES INC5 citations72
US10170616B2Jan 1, 2019
Methods of forming a vertical transistor device
GLOBALFOUNDRIES INC1 citations62
US9530864B2Dec 27, 2016
Junction overlap control in a semiconductor device using a sacrificial spacer layer
GLOBALFOUNDRIES INC1 citations51
US10658243B2May 19, 2020
Method for forming replacement metal gate and related structures
GLOBALFOUNDRIES INC0 citations42
GLOBALFOUNDRIES US INC
5 patentsUS12538550B2Jan 27, 2026
High-electron-mobility transistor with field plate and sidewall spacers
GLOBALFOUNDRIES US INC0 citations62
US12417975B2Sep 16, 2025
Electrically programmable fuse over crystalline semiconductor materials
GLOBALFOUNDRIES US INC0 citations62
US11195761B2Dec 7, 2021
IC structure with short channel gate structure having shorter gate height than long channel gate structure
GLOBALFOUNDRIES US INC0 citations62
US12416530B2Sep 16, 2025
Temperature detection using negative temperature coefficient resistor in GaN setting
GLOBALFOUNDRIES US INC0 citations61
US12183814B1Dec 31, 2024
Multi-channel transistor
GLOBALFOUNDRIES US INC0 citations61