Inventor

PARK JEONGHEE

KR26 patents

⚠️ This page may combine multiple inventors who share the name “PARK JEONGHEE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

PARK JEONGHEE

SAMSUNG ELECTRONICS CO LTD

Semiconductor device and method of fabricating the same

Variable resistance memory devices and method of forming the same

Semiconductor memory device

Variable resistance memory device and method of fabricating the same

Three dimensional semiconductor memory devices

Three dimensional semiconductor memory devices

Semiconductor device including data storage material pattern

Variable resistance memory device having an anti-oxidation layer and a method of manufacturing the same

Variable resistance memory device having an anti-oxidation layer and a method of manufacturing the same

Apparatus for and method of fabricating semiconductor device

Variable resistance memory devices and methods of manufacturing variable resistance memory devices

Methods of manufacturing semiconductor device

Collimator, fabrication apparatus including the same, and method of fabricating a semiconductor device using the same

Method of fabricating a variable resistance memory device

Variable resistance memory device

Semiconductor device and method of fabricating the same

Variable resistance memory device and method of forming the same

Semiconductor device including data storage material pattern

Resistive memory device

Apparatus for and method of fabricating semiconductor devices

Method of fabricating semiconductor devices

Semiconductor device including data storage material pattern

Method of forming a layer and a method of fabricating a variable resistance memory device using the same

Physical vapor deposition methods and systems to form semiconductor films using counterbalance magnetic field generators

Apparatus and arrangements of magnetic field generators to facilitate physical vapor deposition to form semiconductor films

PARK JEONGHEE

Variable resistance memory device and method of forming the same