Inventor
MASUI TAKEKAZU
JP6 patents
Patents
6 patentsUS9926646B2Mar 27, 2018
Method for growing B-Ga2O3-based single crystal
TAMURA SEISAKUSHO KK7 citations81
US9431489B2Aug 30, 2016
β-Ga2O3-based single crystal substrate
TAMURA SEISAKUSHO KK3 citations70
US10526721B2Jan 7, 2020
Method for growing β-GA2O3-based single crystal
TAMURA SEISAKUSHO KK1 citations54
US9915010B2Mar 13, 2018
Method for cultivating β-Ga2O3-based single crystal, and β-Ga2O3-based single crystal substrate and method for producing same
TAMURA SEISAKUSHO KK1 citations48
US10196756B2Feb 5, 2019
β-Ga2O3 single-crystal substrate
TAMURA SEISAKUSHO KK0 citations39
US9926647B2Mar 27, 2018
Method for producing β-Ga2O3 substrate and method for producing crystal laminate structure including cutting out β-Ga2O3 based substrate from β-Ga2O3 based crystal
TAMURA SEISAKUSHO KK0 citations35