P

Inventor

GREENE ANDREW

US39 patents
⚠️ This page may combine multiple inventors who share the name “GREENE ANDREW”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

24 patents
US11081568B2Aug 3, 2021

Protective bilayer inner spacer for nanosheet devices

IBM6 citations84
US10249730B1Apr 2, 2019

Controlling gate profile by inter-layer dielectric (ILD) nanolaminates

IBM11 citations84
US10943990B2Mar 9, 2021

Gate contact over active enabled by alternative spacer scheme and claw-shaped cap

IBM5 citations73
US10790372B2Sep 29, 2020

Direct gate metal cut using selective deposition to protect the gate end line from metal shorts

IBM5 citations73
US10699965B1Jun 30, 2020

Removal of epitaxy defects in transistors

IBM4 citations72
US12417944B2Sep 16, 2025

Formation of trench silicide source or drain contacts without gate damage

IBM0 citations63
US11443982B2Sep 13, 2022

Formation of trench silicide source or drain contacts without gate damage

IBM0 citations63
US11282961B2Mar 22, 2022

Enhanced bottom dielectric isolation in gate-all-around devices

IBM1 citations63
US12100744B2Sep 24, 2024

Wrap around contact process margin improvement with early contact cut

IBM0 citations62
US11990342B2May 21, 2024

Metal cut patterning and etching to minimize interlayer dielectric layer loss

IBM0 citations62
US11876136B2Jan 16, 2024

Transistor having wrap-around source/drain contacts and under-contact spacers

IBM0 citations62
US11757012B2Sep 12, 2023

Source and drain contact cut last process to enable wrap-around-contact

IBM0 citations62
US11695057B2Jul 4, 2023

Protective bilayer inner spacer for nanosheet devices

IBM0 citations62
US11309221B2Apr 19, 2022

Single metallization scheme for gate, source, and drain contact integration

IBM0 citations62
US11296226B2Apr 5, 2022

Transistor having wrap-around source/drain contacts and under-contact spacers

IBM0 citations62
US11227923B2Jan 18, 2022

Wrap around contact process margin improvement with early contact cut

IBM1 citations62
US11133189B2Sep 28, 2021

Metal cut patterning and etching to minimize interlayer dielectric layer loss

IBM0 citations62
US10985076B2Apr 20, 2021

Single metallization scheme for gate, source, and drain contact integration

IBM0 citations62
US10840345B2Nov 17, 2020

Source and drain contact cut last process to enable wrap-around-contact

IBM1 citations62
US10770562B1Sep 8, 2020

Interlayer dielectric replacement techniques with protection for source/drain contacts

IBM1 citations62
US10923401B2Feb 16, 2021

Gate cut critical dimension shrink and active gate defect healing using selective deposition

IBM1 citations59
US11011417B2May 18, 2021

Method and structure of metal cut

IBM0 citations52
US10734234B2Aug 4, 2020

Metal cut patterning and etching to minimize interlayer dielectric layer loss

IBM0 citations52
US11024536B2Jun 1, 2021

Contact interlayer dielectric replacement with improved SAC cap retention

IBM0 citations51

GREENE ANDREW

3 patents

PALANTIR TECHNOLOGIES INC

3 patents

SPLIT SOFTWARE INC

3 patents

FLEXCON CO INC

2 patents

CHASE ADAM

1 patent

GLOBALFOUNDRIES INC

1 patent

SPOTIFY AB

1 patent

ELPIS TECH INC

1 patent