Inventor
CHEN SHUI-HUNG
TW49 patents
⚠️ This page may combine multiple inventors who share the name “CHEN SHUI-HUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
48 patentsUS6207532B1Mar 27, 2001
STI process for improving isolation for deep sub-micron application
TAIWAN SEMICONDUCTOR MFG175 citations99
US6614693B1Sep 2, 2003
Combination erase waveform to reduce oxide trapping centers generation rate of flash EEPROM
TAIWAN SEMICONDUCTOR MFG77 citations98
US6583466B2Jun 24, 2003
Vertical split gate flash memory device in an orthogonal array of rows and columns with devices in columns having shared source regions
TAIWAN SEMICONDUCTOR MFG83 citations98
US6093606AJul 25, 2000
Method of manufacture of vertical stacked gate flash memory device
TAIWAN SEMICONDUCTOR MFG106 citations98
US6548856B1Apr 15, 2003
Vertical stacked gate flash memory device
TAIWAN SEMICONDUCTOR MFG61 citations96
US6214670B1Apr 10, 2001
Method for manufacturing short-channel, metal-gate CMOS devices with superior hot carrier performance
TAIWAN SEMICONDUCTOR MFG68 citations96
US6122201ASep 19, 2000
Clipped sine wave channel erase method to reduce oxide trapping charge generation rate of flash EEPROM
TAIWAN SEMICONDUCTOR MFG79 citations96
US6033963AMar 7, 2000
Method of forming a metal gate for CMOS devices using a replacement gate process
TAIWAN SEMICONDUCTOR MFG225 citations96
US6937457B2Aug 30, 2005
Decoupling capacitor
TAIWAN SEMICONDUCTOR MFG37 citations93
US6645820B1Nov 11, 2003
Polycrystalline silicon diode string for ESD protection of different power supply connections
TAIWAN SEMICONDUCTOR MFG50 citations93
US6437397B1Aug 20, 2002
Flash memory cell with vertically oriented channel
TAIWAN SEMICONDUCTOR MFG26 citations93
US6391719B1May 21, 2002
Method of manufacture of vertical split gate flash memory device
TAIWAN SEMICONDUCTOR MFG33 citations93
US6362035B1Mar 26, 2002
Channel stop ion implantation method for CMOS integrated circuits
TAIWAN SEMICONDUCTOR MFG26 citations93
US6323523B1Nov 27, 2001
N-type structure for n-type pull-up and down I/O protection circuit
TAIWAN SEMICONDUCTOR MFG25 citations93
US6306695B1Oct 23, 2001
Modified source side inserted anti-type diffusion ESD protection device
TAIWAN SEMICONDUCTOR MFG20 citations93
US6277723B1Aug 21, 2001
Plasma damage protection cell using floating N/P/N and P/N/P structure
TAIWAN SEMICONDUCTOR MFG24 citations93
US6225162B1May 1, 2001
Step-shaped floating poly-si gate to improve gate coupling ratio for flash memory application
TAIWAN SEMICONDUCTOR MFG29 citations93
US6190954B1Feb 20, 2001
Robust latchup-immune CMOS structure
TAIWAN SEMICONDUCTOR MFG36 citations93
US6133097AOct 17, 2000
Method for forming mirror image split gate flash memory devices by forming a central source line slot
TAIWAN SEMICONDUCTOR MFG27 citations93
US6127226AOct 3, 2000
Method for forming vertical channel flash memory cell using P/N junction isolation
TAIWAN SEMICONDUCTOR MFG34 citations93
US6087222AJul 11, 2000
Method of manufacture of vertical split gate flash memory device
TAIWAN SEMICONDUCTOR MFG77 citations93
US6011288AJan 4, 2000
Flash memory cell with vertical channels, and source/drain bus lines
TAIWAN SEMICONDUCTOR MFG33 citations93
US5960284ASep 28, 1999
Method for forming vertical channel flash memory cell and device manufactured thereby
TAIWAN SEMICONDUCTOR MFG19 citations93
US6614078B2Sep 2, 2003
Highly latchup-immune CMOS I/O structures
TAIWAN SEMICONDUCTOR MFG21 citations92
US6420221B1Jul 16, 2002
Method of manufacturing a highly latchup-immune CMOS I/O structure
TAIWAN SEMICONDUCTOR MFG24 citations92
US6552372B2Apr 22, 2003
Integrated circuit having improved ESD protection
TAIWAN SEMICONDUCTOR MFG26 citations91
US6207482B1Mar 27, 2001
Integration method for deep sub-micron dual gate transistor design
TAIWAN SEMICONDUCTOR MFG29 citations90
US6876041B2Apr 5, 2005
ESD protection component
TAIWAN SEMICONDUCTOR MFG15 citations84
US6838725B2Jan 4, 2005
Step-shaped floating poly-si gate to improve a gate coupling ratio for flash memory application
TAIWAN SEMICONDUCTOR MFG12 citations84
US6762439B1Jul 13, 2004
Diode for power protection
TAIWAN SEMICONDUCTOR MFG14 citations84
US6756642B2Jun 29, 2004
Integrated circuit having improved ESD protection
TAIWAN SEMICONDUCTOR MFG15 citations84
US6541824B2Apr 1, 2003
Modified source side inserted anti-type diffusion ESD protection device
TAIWAN SEMICONDUCTOR MFG14 citations84
US6242314B1Jun 5, 2001
Method for fabricating a on-chip temperature controller by co-implant polysilicon resistor
TAIWAN SEMICONDUCTOR MFG16 citations84
US7247543B2Jul 24, 2007
Decoupling capacitor
TAIWAN SEMICONDUCTOR MFG6 citations74
US7122857B2Oct 17, 2006
Multi-level (4state/2-bit) stacked gate flash memory cell
TAIWAN SEMICONDUCTOR MFG6 citations74
US6326662B1Dec 4, 2001
Split gate flash memory device with source line
TAIWAN SEMICONDUCTOR MFG8 citations74
US6232160B1May 15, 2001
Method of delta-channel in deep sub-micron process
TAIWAN SEMICONDUCTOR MFG10 citations74
US6066874AMay 23, 2000
Flash memory cell with vertical channels, and source/drain bus lines
TAIWAN SEMICONDUCTOR MFG10 citations74
US6730968B1May 4, 2004
Whole chip ESD protection
TAIWAN SEMICONDUCTOR MFG8 citations73
US7508639B2Mar 24, 2009
Input/output devices with robustness of ESD protection
TAIWAN SEMICONDUCTOR MFG6 citations63
US7256975B2Aug 14, 2007
ESD protection circuit and method
TAIWAN SEMICONDUCTOR MFG4 citations63
US6888248B2May 3, 2005
Extended length metal line for improved ESD performance
TAIWAN SEMICONDUCTOR MFG4 citations63
US7078772B2Jul 18, 2006
Whole chip ESD protection
TAIWAN SEMICONDUCTOR MFG2 citations62
US6879203B2Apr 12, 2005
Whole chip ESD protection
TAIWAN SEMICONDUCTOR MFG1 citations62
US8018000B2Sep 13, 2011
Electrostatic discharge protection pattern for high voltage applications
TAIWAN SEMICONDUCTOR MFG4 citations57
US6992361B2Jan 31, 2006
Deep well implant structure providing latch-up resistant CMOS semiconductor product
TAIWAN SEMICONDUCTOR MFG5 citations57
US7826193B2Nov 2, 2010
String contact structure for high voltage ESD
TAIWAN SEMICONDUCTOR MFG2 citations54
US7462885B2Dec 9, 2008
ESD structure for high voltage ESD protection
TAIWAN SEMICONDUCTOR MFG0 citations37