Inventor
AOYAMA MASAAKI
JP23 patents
⚠️ This page may combine multiple inventors who share the name “AOYAMA MASAAKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NIKON CORP
6 patentsUS5324012AJun 28, 1994
Holding apparatus for holding an article such as a semiconductor wafer
NIKON CORP149 citations99
US5194743AMar 16, 1993
Device for positioning circular semiconductor wafers
NIKON CORP118 citations97
US6697145B1Feb 24, 2004
Substrate processing apparatus for coating photoresist on a substrate and forming a predetermined pattern on a substrate by exposure
NIKON CORP24 citations92
US5559582ASep 24, 1996
Exposure apparatus
NIKON CORP41 citations92
US4900939AFeb 13, 1990
System for processing and conveying substrate
NIKON CORP45 citations92
US6707528B1Mar 16, 2004
Exposure apparatus having independent chambers and methods of making the same
NIKON CORP27 citations91
ASAHI OPTICAL CO LTD
5 patentsUS4650335AMar 17, 1987
Comparison type dimension measuring method and apparatus using a laser beam in a microscope system
ASAHI OPTICAL CO LTD49 citations88
US4625103ANov 25, 1986
Automatic focusing device in microscope system
ASAHI OPTICAL CO LTD22 citations78
US5452119ASep 19, 1995
Scanning optical system
ASAHI OPTICAL CO LTD5 citations74
US5299050AMar 29, 1994
Scanning optical system
ASAHI OPTICAL CO LTD7 citations74
US5218461AJun 8, 1993
Scanning optical apparatus
ASAHI OPTICAL CO LTD14 citations74
HERAEUS QUARZGLAS
3 patentsUS5837334ANov 17, 1998
Large sized quartz glass tube, large scale quartz glass preform, process for manufacturing the same and quartz glass optical fiber
HERAEUS QUARZGLAS44 citations95
US5785729AJul 28, 1998
Method for manufacturing large-sized quartz glass tube
HERAEUS QUARZGLAS70 citations95
US5651827AJul 29, 1997
Single-wafer heat-treatment apparatus and method of manufacturing reactor vessel used for same
HERAEUS QUARZGLAS36 citations92
FUJITSU LTD
3 patentsUS6559485B2May 6, 2003
Semiconductor device having a gate insulation film resistant to dielectric breakdown
FUJITSU LTD21 citations92
US6376388B1Apr 23, 2002
Dry etching with reduced damage to MOS device
FUJITSU LTD29 citations92
US6044850AApr 4, 2000
Semiconductor device manufacturing method including ashing process
FUJITSU LTD9 citations71