Inventor
KRAUS WILLIAM F
US20 patents
⚠️ This page may combine multiple inventors who share the name “KRAUS WILLIAM F”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
RAMTRON INT CORP
17 patentsUS6141237AOct 31, 2000
Ferroelectric non-volatile latch circuits
RAMTRON INT CORP87 citations97
US5598366AJan 28, 1997
Ferroelectric nonvolatile random access memory utilizing self-bootstrapping plate line segment drivers
RAMTRON INT CORP62 citations96
US6252793B1Jun 26, 2001
Reference cell configuration for a 1T/1C ferroelectric memory
RAMTRON INT CORP59 citations95
US6028783AFeb 22, 2000
Memory cell configuration for a 1T/1C ferroelectric memory
RAMTRON INT CORP57 citations95
US5880989AMar 9, 1999
Sensing methodology for a 1T/1C ferroelectric memory
RAMTRON INT CORP51 citations94
US6185123B1Feb 6, 2001
Memory cell configuration for a 1T/1C ferroelectric memory
RAMTRON INT CORP16 citations92
US5995406ANov 30, 1999
Plate line segmentation in a 1T/1C ferroelectric memory
RAMTRON INT CORP38 citations92
US5901088AMay 4, 1999
Sense amplifier utilizing a balancing resistor
RAMTRON INT CORP19 citations92
US5867047AFeb 2, 1999
Bandgap reference based power-on detect circuit including a suppression circuit
RAMTRON INT CORP37 citations92
US5852376ADec 22, 1998
Bandgap reference based power-on detect circuit including a supression circuit
RAMTRON INT CORP36 citations92
US5804996ASep 8, 1998
Low-power non-resetable test mode circuit
RAMTRON INT CORP25 citations92
US5774392AJun 30, 1998
Bootstrapping circuit utilizing a ferroelectric capacitor
RAMTRON INT CORP44 citations92
US6060919AMay 9, 2000
CMOS preferred state power-up latch
RAMTRON INT CORP17 citations84
US5986919ANov 16, 1999
Reference cell configuration for a 1T/1C ferroelectric memory
RAMTRON INT CORP17 citations83
US6430093B1Aug 6, 2002
CMOS boosting circuit utilizing ferroelectric capacitors
RAMTRON INT CORP9 citations73
US5978251ANov 2, 1999
Plate line driver circuit for a 1T/1C ferroelectric memory
RAMTRON INT CORP16 citations73
US5956266ASep 21, 1999
Reference cell for a 1T/1C ferroelectric memory
RAMTRON INT CORP16 citations73