Inventor

MOTOKI KENSAKU

JP61 patents

⚠️ This page may combine multiple inventors who share the name “MOTOKI KENSAKU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MOTOKI KENSAKU

SUMITOMO ELECTRIC INDUSTRIES

Group-III nitride light-emitting device

Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate

GaN single crystal substrate and method of making the same

Method of producing a single crystal gallium nitride substrate and single crystal gallium nitride substrate

Method of growing single crystal GaN, method of making single crystal GaN substrate and single crystal GaN substrate

Substrate-fluorescent LED

GaN single crystal substrate and method of producing same

AlxInyGa1−x−yN mixture crystal substrate

Oxygen doping method to gallium nitride single crystal substrate and oxygen-doped N-type gallium nitride freestanding single crystal substrate

Single crystal GaN substrate, method of growing same and method of producing same

Light emitting device, wafer for light emitting device, and method of preparing the same

Light emitting device, wafer for light emitting device, and method of preparing the same

AlxInyGa1-x-yN mixture crystal substrate, method of growing AlxInyGa1-x-yN mixture crystal substrate and method of producing AlxInyGa1-x-yN mixture crystal substrate

Single crystal GaN substrate semiconductor device

Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate

Oxygen-doped n-type gallium nitride freestanding single crystal substrate

Fabrication method and fabrication apparatus of group III nitride crystal substance

Process for vapor phase epitaxy of compound semiconductor

GaN single crystal substrate and method of making the same

Method of manufacturing a semiconductor light emitting device, semiconductor light emitting device, method of manufacturing a semiconductor device, semiconductor device, method of manufacturing a device, and device

Nitride semiconductor device having oxygen-doped N-type gallium nitride freestanding single crystal substrate

Oxygen-doped n-type gallium nitride freestanding single crystal substrate

GaN single crystal substrate and method of making the same

Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate

Method of manufacturing a semiconductor light emitting device, semiconductor light emitting device, method of manufacturing a semiconductor device, semiconductor device, method of manufacturing a device, and device

Method for fabricating a group III nitride semiconductor laser device

Epitaxial wafer and method of preparing the same

Epitaxial wafer having a gallium nitride epitaxial layer deposited on semiconductor substrate and method for preparing the same

Semiconductor light-emitting element and substrate used in formation of the same

Fabrication method and fabrication apparatus of group III nitride crystal substance

Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate

Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate

Oxygen-doped n-type gallium nitride freestanding single crystal substrate

SHARP KK

Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus

Nitride-composite semiconductor laser element, its manufacturing method, and semiconductor optical device

Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus

Group III nitride semiconductor laser device

Nitride semiconductor light-emitting device

Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus

Method of manufacturing nitride-composite semiconductor laser element, with disclocation control

Nitride semiconductor light-emitting device

Nitride semiconductor light-emitting device

HASHIMOTO SHIN

Method for forming epitaxial wafer and method for fabricating semiconductor device

Epitaxial wafer, method for manufacturing gallium nitride semiconductor device, gallium nitride semiconductor device and gallium oxide wafer

Method for fabricating wafer product and method for fabricating gallium nitride based semiconductor optical device

NAKAHATA SEIJI

AlxInyGal-x-yN mixture crystal substrate, method of growing same and method of producing same

AlxInyGa1-x-yN mixture crystal substrate, method of growing same and method of producing same

SUMITO ELECTRIC IND LTD

A1xInyGa1-x-yN mixture crystal substrate, method of growing same and method of producing same

SONY CORP

Method for producing structured substrate, structured substrate, method for producing semiconductor light emitting device, semiconductor light emitting device, method for producing semiconductor device, semiconductor device, method for producing device, and device

SUMITOMO ELECTRIC PRINTED CIRCUITS INC

LED module including flexible printed circuit board with adhesive layers and LED lighting fixture