Inventor
SEKI HISASHI
JP8 patents
Patents
8 patentsUS5970314AOct 19, 1999
Process for vapor phase epitaxy of compound semiconductor
SUMITOMO ELECTRIC INDUSTRIES23 citations92
US5864573AJan 26, 1999
Epitaxial wafer and compound semiconductor light emitting device, and method of fabricating the same
SUMITOMO ELECTRIC INDUSTRIES18 citations92
US5665986ASep 9, 1997
Compound semiconductor light emitting device and method of preparing the same
SUMITOMO ELECTRIC INDUSTRIES32 citations92
US5843590ADec 1, 1998
Epitaxial wafer and method of preparing the same
SUMITOMO ELECTRIC INDUSTRIES32 citations90
US6031252AFeb 29, 2000
Epitaxial wafer and method of preparing the same
SUMITOMO ELECTRIC INDUSTRIES11 citations73
US5756374AMay 26, 1998
Compound semiconductor light emitting device and method of preparing the same
SUMITOMO ELECTRIC INDUSTRIES10 citations73
US6270587B1Aug 7, 2001
Epitaxial wafer having a gallium nitride epitaxial layer deposited on semiconductor substrate and method for preparing the same
SUMITOMO ELECTRIC INDUSTRIES12 citations72
US6387722B1May 14, 2002
Methods for preparing an epitaxial wafer having a gallium nitride epitaxial layer deposited on a semiconductor substrate
SUMITOMO ELECTRIC INDUSTRIES3 citations61