Inventor

IDE YOSUKE

JP85 patents

⚠️ This page may combine multiple inventors who share the name “IDE YOSUKE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IDE YOSUKE

ALPS ELECTRIC CO LTD

Magnetic sensing element including pinned layer and/or free layer composed of [110] crystal planes-oriented Heusler alloy

CPP giant magnetoresistive head having antiferromagnetic film disposed in rear of element

Spin valve magnetoresistive element having pinned magnetic layer composed of epitaxial laminated film having magnetic sublayers and nanomagnetic interlayer

Thin film magnetic element with accurately controllable track width and method of manufacturing the same

Exchange coupling film and electroresistive sensor using the same

Spin valve thin film magnetic element having first and second free magnetic layers having antiparallel magnetization directions

Spin-valve magnetoresistive element and method for making the same

Magnetic sensing element including magnetic layer composed of Heusler alloy disposed on underlayer having {111}-oriented fcc structure

Dual type magnetic sensing element wherein ΔR×A in upstream part in flow direction of electric current is smaller than ΔR×A in downstream part

Method of producing exchange coupling film and method of producing magnetoresistive sensor by using exchange coupling film

Magnetic detecting element having antiferromagnetic film having predetermined space in track width direction and method for manufacturing the same

Magnetic sensor having free layer additionally provided with magnetic anisotropy by shape anisotropy

Magnetic sensing element with improved sensitivity and method for making the same

Spin-valve type thin film magnetic element having bias layers and ferromagnetic layers

Spin-valve thin-film magnetic element provided with single free magnetic layer

Exchange coupling film and electoresistive sensor using the same

Spin valve thin film magnetic element and thin film magnetic head

Exchange coupling film and electroresistive sensor using the same

Method of producing exchange coupling film and method of producing magnetoresistive sensor by using exchange coupling

Spin valve thin-film magnetic device having free magnetic layer in ferrimagnetic state and manufacturing method therefor

Spin valve thin film magnetic element and thin film magnetic head

Method of producing exchange coupling film and method of producing magnetoresistive sensor by using the exchange coupling film

Spin-valve thin-film magnetic element

Tunnel magnetoresistive sensor in which at least part of pinned layer is composed of CoFeB layer and method for manufacturing the tunnel magnetoresistive sensor

Tunneling magnetic sensing element including non-magnetic metal layer between magnetic layers

TDK CORP

Self-pinned CPP giant magnetoresistive head with antiferromagnetic film absent from current path

Magnetic sensing element including laminated film composed of half-metal and NiFe alloy as free layer

Tunneling magnetic sensor including free magnetic layer and magnesium protective layer disposed thereon

CPP GMR head with antiferromagnetic layer disposed at rear of ferrimagnetic pinned layer

Spin valve-GMR element in which a non-metal laminate layer is provided as a free magnetic layer and method of manufacturing the same

Magnetic detecting device having free layer or pinned layer formed by lamination of magnetic alloy and Cu layer and method of manufacturing magnetic detecting device

Magnetic sensing element and method for manufacturing the same

CCP magnetic detecting element including a self-pinned CoFe layer

Tunneling magnetic detecting element having insulation barrier layer and method for making the same

Tunneling magnetic sensor including platinum layer and method for producing the same

Magnetic sensing element containing quaternary Heusler alloy Co2Mn (Ge1-xSnx) which constitutes a free magnetic layer or pinned magnetic layer

Magnetoresistance element employing Heusler alloy as magnetic layer

Magnetic sensing element including free magnetic layer or pinned magnetic layer having two sublayers that are composed of different CoMn-based heusler alloys

Magnetic detecting element having free layer formed of NiFe alloy and method of manufacturing the same

Magnetic detecting element with diffusion-preventing layer between spacer Cu and magnetic layer, and method of manufacturing the same

IDE YOSUKE

Magnetic sensor and magnetic balance type current sensor including the same

Magnetic-balance-system current sensor

Magnetic balance type current sensor

Magnetic sensor and magnetic balance type current sensor utilizing same

Magnetic coupling type isolator

ALPS ELECTRONICS CO LTD

Magnetic detecting element having β-values selected for free magnetic layer and pinned magnetic layer

NISHIMURA KAZUMASA

Tunneling magnetic sensing element with insertion magnetic layer inspired into soft magnetic layer

ICHINOHE KENJI

Current sensor

SAITO MASAMICHI

Magnetic balance type current sensor

ANELVA CORP

Method and apparatus for loading substrate in semiconductor manufacturing apparatus