Inventor · disambiguated record
Pei-Hung Chen
Also filed as: CHEN PEI-HUNG
16 granted patents·289 citations·filing 1996–2020
93Inventor score
Files withTAIWAN SEMICONDUCTOR MFG11CHOU CHUN-LI1GOOGLE LLC1HSIAO YEH INTL CO LTD1TAIWAN SEMICONDUCTOR MANUACTUR1
Top patents by PatentIndex Score
16 records- 0191US6020241APost metal code engineering for a ROMTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Feb 1, 2000·102 cites·10 claims
- 0287US6350390B1Plasma etch method for forming patterned layer with enhanced critical dimension (CD) controlTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Feb 26, 2002·53 cites·16 claims
- 0370US7259850B2Approach to improve ellipsometer modeling accuracy for solving material optical constants N & KTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Aug 21, 2007·8 cites·19 claims
- 0467US9728533B2Aqueous cleaning techniques and compositions for use in semiconductor device manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 8, 2017·1 cites·20 claims
- 0567US8916429B2Aqueous cleaning techniques and compositions for use in semiconductor device manufacturingCHOU CHUN-LI·Filed 2012·Granted Dec 23, 2014·2 cites·14 claims
- 0659US5753548AMethod for preventing fluorine outgassing-induced interlevel dielectric delamination on P-channel FETSTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted May 19, 1998·21 cites·20 claims
- 0755US5962345AMethod to reduce contact resistance by means of in-situ ICPTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Oct 5, 1999·22 cites·18 claims
- 0853US10671909B2Decreasing neural network inference times using softmax approximationGOOGLE LLC·Filed 2019·Granted Jun 2, 2020·0 cites·20 claims
- 0953US6214739B1Method of metal etching with in-situ plasma cleaningTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Apr 10, 2001·18 cites·8 claims
- 1053US5707896AMethod for preventing delamination of interlevel dielectric layer over FET P+ doped polysilicon gate electrodes on semiconductor integrated circuitsTAIWAN SEMICONDUCTOR MANUACTUR·Filed 1996·Granted Jan 13, 1998·17 cites·18 claims
- 1150US5811343AOxidation method for removing fluorine gas inside polysilicon during semiconductor manufacturing to prevent delamination of subsequent layer induced by fluorine outgassing dielectricTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Sep 22, 1998·14 cites·3 claims
- 1248US6267121B1Process to season and determine condition of a high density plasma etcherTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jul 31, 2001·14 cites·19 claims
- 1340USD956488SCore for food products moldHSIAO YEH INTL CO LTD·Filed 2020·Granted Jul 5, 2022·1 cites·1 claims
- 1435US6642150B1Method for testing for blind hole formed in wafer layerTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Nov 4, 2003·6 cites·1 claims
- 1534US5658821AMethod of improving uniformity of metal-to-poly capacitors composed by polysilicon oxide and avoiding device damageTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Aug 19, 1997·8 cites·22 claims
- 1630US6159660AOpposite focus control to avoid keyholes inside a passivation layerTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Dec 12, 2000·2 cites·12 claims
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