Inventor

HANAFI HUSSEIN IBRAHIM

US17 patents

⚠️ This page may combine multiple inventors who share the name “HANAFI HUSSEIN IBRAHIM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HANAFI HUSSEIN IBRAHIM

IBM

Common source transistor capacitor stack

Self-aligned diffused source vertical transistors with stack capacitors in a 4F-square memory cell array

2F-square memory cell for gigabit memory applications

Self-aligned diffused source vertical transistors with deep trench capacitors in a 4F-square memory cell array

4F-square memory cell having vertical floating-gate transistors with self-aligned shallow trench isolation

Method of making MOSFET with high dielectric constant gate insulator and minimum overlap capacitance

Self-aligned diffused source vertical transistors with deep trench capacitors in a 4F-square memory cell array

Self-aligned diffused source vertical transistors with stack capacitors in a 4F-square memory cell array

Recessed-gate MOSFET with out-diffused source/drain extension

4F-square memory cell having vertical floating-gate transistors with self-aligned shallow trench isolation

Damascene-gate process for the fabrication of MOSFET devices with minimum poly-gate depletion, silicided source and drain junctions, and low sheet resistance gate-poly

Disposable-spacer damascene-gate process for SUB 0.05 μm MOS devices

Method of forming a buried bitline in a vertical DRAM device

Damascene double-gate MOSFET structure and its fabrication method

Methods for making high-aspect ratio holes in semiconductor and its application to a gate damascene process for sub- 0.05 micron mosfets

Process for making doped polysilicon layers on sidewalls

INTERNAT BUSINSESS MACHINES CO

MOSFET with high dielectric constant gate insulator and minimum overlap capacitance