Inventor · disambiguated record
Keiji Hosotani
Also filed as: HOSOTANI KEIJI
59 granted patents·10 pending applications·973 citations·filing 1996–2022
99Inventor score
Top patents by PatentIndex Score
69 records- 0199US7920412B2Magnetic random access memory and method of manufacturing the sameTOSHIBA KK·Filed 2009·Granted Apr 5, 2011·102 cites·5 claims
- 0297US8716818B2Magnetoresistive element and method of manufacturing the sameYOSHIKAWA MASATOSHI·Filed 2012·Granted May 6, 2014·49 cites·20 claims
- 0394US7919826B2Magnetoresistive element and manufacturing method thereofTOSHIBA KK·Filed 2008·Granted Apr 5, 2011·22 cites·14 claims
- 0491US7706175B2Magnetic random access memory and method of manufacturing the sameTOSHIBA KK·Filed 2007·Granted Apr 27, 2010·21 cites·17 claims
- 0591US6829162B2Magnetic memory device and manufacturing method thereofTOSHIBA KK·Filed 2002·Granted Dec 7, 2004·61 cites·33 claims
- 0691US6051859ADRAM having a cup-shaped storage node electrode recessed within an insulating layerTOSHIBA KK·Filed 1998·Granted Apr 18, 2000·71 cites·27 claims
- 0790US9799383B2Magnetic memory deviceTOSHIBA MEMORY CORP·Filed 2016·Granted Oct 24, 2017·10 cites·20 claims
- 0890US6795334B2Magnetic random access memoryTOSHIBA KK·Filed 2002·Granted Sep 21, 2004·52 cites·103 claims
- 0990US6778426B2Magnetic random access memory including memory cell unit and reference cell unitTOSHIBA KK·Filed 2002·Granted Aug 17, 2004·55 cites·16 claims
- 1090US6670660B2Semiconductor memory device utilizing tunnel magneto resistive effects and method for manufacturing the sameTOSHIBA KK·Filed 2001·Granted Dec 30, 2003·53 cites·5 claims
- 1189US8604569B2Magnetoresistive elementHOSOTANI KEIJI·Filed 2008·Granted Dec 10, 2013·16 cites·6 claims
- 1288US10868037B2Non-volatile semiconductor memory deviceTOSHIBA MEMORY CORP·Filed 2019·Granted Dec 15, 2020·5 cites·20 claims
- 1388US8111538B2Semiconductor memory deviceHOSOTANI KEIJI·Filed 2008·Granted Feb 7, 2012·19 cites·6 claims
- 1488US6653703B2Semiconductor memory device using magneto resistive element and method of manufacturing the sameTOSHIBA KK·Filed 2002·Granted Nov 25, 2003·36 cites·16 claims
- 1587US11107508B2Semiconductor memory deviceTOSHIBA MEMORY CORP·Filed 2019·Granted Aug 31, 2021·5 cites·19 claims
- 1687US7239545B2Magnetic random access memory, magnetic random access memory manufacturing method, and magnetic random access memory write methodTOSHIBA KK·Filed 2005·Granted Jul 3, 2007·17 cites·15 claims
- 1786US8553450B2Magnetic random access memory and write method of the sameHOSOTANI KEIJI·Filed 2009·Granted Oct 8, 2013·18 cites·20 claims
- 1885US6797536B2Magnetic memory device having yoke layer, and manufacturing methodTOSHIBA KK·Filed 2004·Granted Sep 28, 2004·29 cites·26 claims
- 1984US7894246B2Magnetoresistive element and magnetic memoryTOSHIBA KK·Filed 2008·Granted Feb 22, 2011·7 cites·22 claims
- 2084US6960815B2Magnetic memory device having yoke layer, and manufacturing method thereofTOSHIBA KK·Filed 2003·Granted Nov 1, 2005·29 cites·55 claims
- 2182US6879515B2Magnetic memory device having yoke layerTOSHIBA KK·Filed 2004·Granted Apr 12, 2005·23 cites·20 claims
- 2282US5977583ASemiconductor memory device including memory cells having a capacitor on bit line structureTOSHIBA KK·Filed 1996·Granted Nov 2, 1999·35 cites·17 claims
- 2381US6362042B1DRAM having a cup-shaped storage node electrode recessed within an insulating layerTOSHIBA KK·Filed 2000·Granted Mar 26, 2002·22 cites·13 claims
- 2480US9653182B1Testing method, manufacturing method, and testing device of memory deviceTOSHIBA KK·Filed 2016·Granted May 16, 2017·5 cites·19 claims
- 2578US6977401B2Magnetic memory device having magnetic shield layer, and manufacturing method thereofTOSHIBA KK·Filed 2002·Granted Dec 20, 2005·21 cites·35 claims
- 2677US7932513B2Magnetic random access memory, and write method and manufacturing method of the sameTOSHIBA KK·Filed 2008·Granted Apr 26, 2011·10 cites·10 claims
- 2777US7164599B2Data read method of magnetic random access memoryTOSHIBA KK·Filed 2005·Granted Jan 16, 2007·10 cites·20 claims
- 2876US6198122B1Semiconductor memory and method of fabricating the sameTOSHIBA KK·Filed 1998·Granted Mar 6, 2001·35 cites·13 claims
- 2975US6914810B2Magnetic memory device and manufacturing method thereofTOSHIBA KK·Filed 2004·Granted Jul 5, 2005·17 cites·19 claims
- 3074US6861314B2Semiconductor memory device utilizing tunnel magneto resistive effects and method for manufacturing the sameTOSHIBA KK·Filed 2004·Granted Mar 1, 2005·14 cites·6 claims
- 3173US7247505B2Magnetic memory device having magnetic shield layer, and manufacturing method thereofTOSHIBA KK·Filed 2005·Granted Jul 24, 2007·3 cites·14 claims
- 3272US6980463B2Semiconductor memory device including memory cell portion and peripheral circuit portionTOSHIBA KK·Filed 2002·Granted Dec 27, 2005·17 cites·22 claims
- 3371US8173447B2Magnetoresistive element and magnetic memoryUEDA TOMOMASA·Filed 2010·Granted May 8, 2012·3 cites·5 claims
- 3469US8592928B2Magnetic random access memory and method of manufacturing the sameHOSOTANI KEIJI·Filed 2011·Granted Nov 26, 2013·2 cites·6 claims
- 3569US7727778B2Magnetoresistive element and method of manufacturing the sameTOSHIBA KK·Filed 2008·Granted Jun 1, 2010·5 cites·12 claims
- 3668US7405087B2Magnetic memory device and method of manufacturing the sameTOSHIBA KK·Filed 2005·Granted Jul 29, 2008·2 cites·11 claims
- 3765US7046545B2Semiconductor integrated circuit device including magnetoresistive effect device and method of manufacturing the sameTOSHIBA KK·Filed 2003·Granted May 16, 2006·13 cites·14 claims
- 3865US6803619B2Semiconductor memory deviceTOSHIBA KK·Filed 2003·Granted Oct 12, 2004·9 cites·8 claims
- 3964US6914284B2Magnetic memory device and method of manufacturing the sameTOSHIBA KK·Filed 2003·Granted Jul 5, 2005·8 cites·23 claims
- 4063US7751235B2Semiconductor memory device and write and read methods of the sameTOSHIBA KK·Filed 2007·Granted Jul 6, 2010·5 cites·20 claims
- 4160US10622545B2Magnetic memory device and method of manufacturing the sameTOSHIBA MEMORY CORP·Filed 2017·Granted Apr 14, 2020·1 cites·20 claims
- 4260US8786038B2Semiconductor storage device and method of manufacturing the sameHOSOTANI KEIJI·Filed 2011·Granted Jul 22, 2014·1 cites·18 claims
- 4360US2008253039A1Magnetoresistive effect elementNAGAMINE MAKOTO·Filed 2008·Application pending·0 cites
- 4459US6593202B2Semiconductor memory device and fabrication method thereofTOSHIBA KK·Filed 2001·Granted Jul 15, 2003·5 cites·13 claims
- 4558US10311929B2Resistance change memoryTOSHIBA MEMORY CORP·Filed 2017·Granted Jun 4, 2019·1 cites·7 claims
- 4657US6958932B2Semiconductor integrated circuit device and method of manufacturing the sameTOSHIBA KK·Filed 2002·Granted Oct 25, 2005·6 cites·19 claims
- 4756US11610910B2Semiconductor memory deviceKIOXIA CORP·Filed 2020·Granted Mar 21, 2023·0 cites·18 claims
- 4855US11646354B2Semiconductor device and semiconductor storage deviceKIOXIA CORP·Filed 2021·Granted May 9, 2023·0 cites·9 claims
- 4955US6175130B1DRAM having a cup-shaped storage node electrode recessed within a semiconductor substrateTOSHIBA KK·Filed 1999·Granted Jan 16, 2001·11 cites·10 claims
- 5055US2023014439A1Semiconductor memory deviceKIOXIA CORP·Filed 2022·Application pending·0 cites
Showing the top 50 of 69 patent records by PatentIndex Score.
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