P

Inventor

LI YUN-FEI

US39 patents
⚠️ This page may combine multiple inventors who share the name “LI YUN-FEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HEADWAY TECHNOLOGIES INC

16 patents
US6857180B2Feb 22, 2005

Method for fabricating a patterned synthetic longitudinal exchange biased GMR sensor

HEADWAY TECHNOLOGIES INC33 citations92
US7688555B2Mar 30, 2010

Hard bias design for extra high density recording

HEADWAY TECHNOLOGIES INC11 citations84
US6870711B1Mar 22, 2005

Double layer spacer for antiparallel pinned layer in CIP/CPP GMR and MTJ devices

HEADWAY TECHNOLOGIES INC17 citations84
US6842969B2Jan 18, 2005

Process for manufacturing a magnetic read head

HEADWAY TECHNOLOGIES INC12 citations84
US7035060B2Apr 25, 2006

Easily manufactured exchange bias stabilization scheme

HEADWAY TECHNOLOGIES INC6 citations74
US7400475B2Jul 15, 2008

Patterned, synthetic longitudinally exchange biased GMR sensor

HEADWAY TECHNOLOGIES INC4 citations73
US7431961B2Oct 7, 2008

Composite free layer for CIP GMR device

HEADWAY TECHNOLOGIES INC4 citations63
US7336452B2Feb 26, 2008

Patterned exchange bias GMR using metallic buffer layer

HEADWAY TECHNOLOGIES INC2 citations63
US7327540B2Feb 5, 2008

Hard biased materials for recording head applications

HEADWAY TECHNOLOGIES INC3 citations63
US7099125B2Aug 29, 2006

Easily manufactured exchange bias stabilization scheme

HEADWAY TECHNOLOGIES INC2 citations63
US7022383B2Apr 4, 2006

Exchange bias structure for abutted junction GMR sensor

HEADWAY TECHNOLOGIES INC2 citations63
US6844999B2Jan 18, 2005

Boron doped CoFe for GMR free layer

HEADWAY TECHNOLOGIES INC6 citations63
US7152304B2Dec 26, 2006

Method for fabricating a patterned, synthetic transverse exchange biased GMR sensor

HEADWAY TECHNOLOGIES INC1 citations62
US7134186B2Nov 14, 2006

Method for fabricating a patterned, synthetic transversely exchanged biased GMR sensor

HEADWAY TECHNOLOGIES INC3 citations62
US7529067B2May 5, 2009

Exchange bias structure for abutted junction GMR sensor

HEADWAY TECHNOLOGIES INC0 citations52
US7320169B2Jan 22, 2008

Self-pinned GMR structure by annealing

HEADWAY TECHNOLOGIES INC1 citations52

WESTERN DIGITAL FREMONT LLC

5 patents

ZHOU RONGHUI

3 patents

LUO GUANGHONG

2 patents

GUAN LIJIE

2 patents

LI YUN-FEI

2 patents

RUDY STEVEN C

2 patents

ZHANG JINQIU

1 patent

SI WEIMIN

1 patent

TANG YUNJUN

1 patent

YANG DANNING

1 patent

ZHANG KUNLIANG

1 patent

UNITED MICROELECTRONICS CORP

1 patent

XIANG XIAOHAI

1 patent