P

Inventor

UCHIYAMA HIROYUKI

JP116 patents
⚠️ This page may combine multiple inventors who share the name “UCHIYAMA HIROYUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HITACHI LTD

29 patents
US7977675B2Jul 12, 2011

Semiconductor device and method for manufacturing the same

HITACHI LTD77 citations98
US6762449B2Jul 13, 2004

Semiconductor integrated circuit device and the process of manufacturing the same having poly-silicon plug, wiring trenches and bit lines formed in the wiring trenches having a width finer than a predetermined size

HITACHI LTD77 citations98
US5208782AMay 4, 1993

Semiconductor integrated circuit device having a plurality of memory blocks and a lead on chip (LOC) arrangement

HITACHI LTD133 citations98
US6603162B1Aug 5, 2003

Semiconductor integrated circuit device including dummy patterns located to reduce dishing

HITACHI LTD69 citations97
US6043118AMar 28, 2000

Semiconductor memory circuit device and method for fabricating a semiconductor memory device circuit

HITACHI LTD43 citations95
US5904556AMay 18, 1999

Method for making semiconductor integrated circuit device having interconnection structure using tungsten film

HITACHI LTD63 citations95
US5734188AMar 31, 1998

Semiconductor integrated circuit, method of fabricating the same and apparatus for fabricating the same

HITACHI LTD73 citations95
US5237187AAug 17, 1993

Semiconductor memory circuit device and method for fabricating same

HITACHI LTD66 citations95
US8368067B2Feb 5, 2013

Oxide semiconductor device with oxide semiconductor layers of different oxygen concentrations and method of manufacturing the same

HITACHI LTD34 citations92
US6746938B2Jun 8, 2004

Manufacturing method for semiconductor device using photo sensitive polyimide etching mask to form viaholes

HITACHI LTD34 citations92
US6583049B2Jun 24, 2003

Semiconductor integrated circuit device and method for making the same

HITACHI LTD13 citations92
US6503803B2Jan 7, 2003

Method of fabricating a semiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layer

HITACHI LTD16 citations92
US6287914B1Sep 11, 2001

Method of forming a MISFET device with a bit line completely surrounded by dielectric

HITACHI LTD26 citations92
US6031288AFeb 29, 2000

Semiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layer and method of fabrication thereof

HITACHI LTD36 citations92
US5917211AJun 29, 1999

Semiconductor integrated circuit, method of fabricating the same and apparatus for fabricating the same

HITACHI LTD37 citations92
US5578849ANov 26, 1996

Semiconductor integrated circuit device including a memory device having memory cells with increased information storage capacitance

HITACHI LTD35 citations92
US5389558AFeb 14, 1995

Method of making a semiconductor memory circuit device

HITACHI LTD35 citations92
US5349218ASep 20, 1994

Semiconductor integrated circuit device including memory cells having a structure effective in suppression of leak current

HITACHI LTD36 citations92
US5264712ANov 23, 1993

Semiconductor integrated circuit, method of fabricating the same and apparatus for fabricating the same

HITACHI LTD27 citations92
US5684315ANov 4, 1997

Semiconductor memory device including memory cells each having an information storage capacitor component formed over control electrode of cell selecting transistor

HITACHI LTD31 citations89
US6833331B2Dec 21, 2004

Method of manufacturing semiconductor integrated circuit device having insulating film formed from liquid substance containing polymer of silicon, oxygen, and hydrogen

HITACHI LTD13 citations84
US5949097ASep 7, 1999

Semiconductor device, method for manufacturing same, communication system and electric circuit system

HITACHI LTD17 citations84
US5805513ASep 8, 1998

Semiconductor memory device with improved substrate arrangement to permit forming a plurality of different types of random access memory, and a testing method therefor

HITACHI LTD15 citations81
US5631182AMay 20, 1997

Method of making a semiconductor memory circuit device

HITACHI LTD15 citations81
US5426613AJun 20, 1995

Semiconductor memory device with improved substrate arrangement to permit forming a plurality of different types of random access memory, and a testing method therefor

HITACHI LTD18 citations81
US7026679B2Apr 11, 2006

Semiconductor integrated circuit device and the process of manufacturing the same having poly-silicon plug, wiring trenches and bit lines formed in the wiring trenches having a width finer than a predetermined size

HITACHI LTD6 citations74
US6867092B2Mar 15, 2005

Semiconductor integrated circuit device and the process of manufacturing the same for reducing the size of a memory cell by making the width of a bit line than a predetermined minimum size

HITACHI LTD11 citations74
US6514854B2Feb 4, 2003

Method of producing semiconductor integrated circuit device having a plug

HITACHI LTD11 citations74
US6509277B1Jan 21, 2003

Method of manufacturing semiconductor integrated circuit device having insulatro film formed from liquid containing polymer of silicon, oxygen, and hydrogen

HITACHI LTD10 citations74

RENESAS TECH CORP

6 patents

FUJI PHOTO FILM CO LTD

5 patents

FUJIFILM CORP

2 patents

UCHIYAMA HIROYUKI

2 patents

ELPIDA MEMORY INC

2 patents

KAWAMURA TETSUFUMI

1 patent

HITACHI MEDIA ELECTRON KK

1 patent

CANON KK

1 patent

WAKANA HIRONORI

1 patent

Showing the top 50 of 116 patents by PatentIndex Score.