Inventor

SAXLER ADAM WILLIAM

US53 patents

⚠️ This page may combine multiple inventors who share the name “SAXLER ADAM WILLIAM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAXLER ADAM WILLIAM

CREE INC

Integrated nitride and silicon carbide-based devices

Binary group III-nitride based high electron mobility transistors

Integrated nitride-based acoustic wave devices and methods of fabricating integrated nitride-based acoustic wave devices

Strain balanced nitride heterojunction transistors

Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses

Methods of manufacturing group III nitride semiconductor devices with silicon nitride layers

Cap layers including aluminum nitride for nitride-based transistors

Aluminum free group III-nitride based high electron mobility transistors

Heterojunction transistors including energy barriers

Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses

Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions

Transistors having buried n-type and p-type regions beneath the source region

Methods of fabricating nitride-based transistors having regrown ohmic contact regions

High electron mobility transistor

Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same

High power density and/or linearity transistors

Semiconductor devices having a hybrid channel layer, current aperture transistors and methods of fabricating same

Strain compensated semiconductor structures and methods of fabricating strain compensated semiconductor structures

Strain compensated semiconductor structures

Thick nitride semiconductor structures with interlayer structures

Nitride semiconductor structures with interlayer structures

Nitrogen passivation of interface states in SiO2/SiC structures

Composite substrates of conductive and insulating or semi-insulating group III-nitrides for group III-nitride devices

Field effect transistors (FETs) having multi-watt output power at millimeter-wave frequencies

Co-doping for fermi level control in semi-insulating Group III nitrides

Silicon carbide layer on diamond substrate for supporting group III nitride heterostructure device

Highly uniform group III nitride epitaxial layers on 100 millimeter diameter silicon carbide substrates

Silicon carbide on diamond substrates and related devices and methods

Current aperture transistors and methods of fabricating same

Co-doping for fermi level control in semi-insulating Group III nitrides

Thick nitride semiconductor structures with interlayer structures and methods of fabricating thick nitride semiconductor structures

Highly uniform group III nitride epitaxial layers on 100 millimeter diameter silicon carbide substrates

Methods of fabricating thick semi-insulating or insulating epitaxial gallium nitride layers

Wide bandgap device having a buffer layer disposed over a diamond substrate

SAXLER ADAM WILLIAM

Methods of fabricating strain balanced nitride heterojunction transistors

Method of fabricating seminconductor devices including self aligned refractory contacts

Heterojunction transistors having barrier layer bandgaps greater than channel layer bandgaps and related methods

Gas driven rotation apparatus and method for forming crystalline layers

Devices having thick semi-insulating epitaxial gallium nitride layer

Wafer precursor prepared for group III nitride epitaxial growth on a composite substrate having diamond and silicon carbide layers, and semiconductor laser formed thereon

Group III nitride semiconductor devices with silicon nitride layers and methods of manufacturing such devices

Methods of fabricating nitride semiconductor structures with interlayer structures

Low dislocation density group III nitride layers on silicon carbide substrates and methods of making the same

Methods of passivating surfaces of wide bandgap semiconductor devices

DRISCOLL DANIEL CARLETON

Semiconductor device structures with modulated and delta doping and related methods

Semiconductor device structures with modulated doping and related methods

SMITH RICHARD PETER

Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions

Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions

INTEL CORP

Memory device with multi-layer liner structure

SHEPPARD SCOTT T

Integrated nitride and silicon carbide-based devices