Inventor
LEE JU YEAB
KR18 patents
⚠️ This page may combine multiple inventors who share the name “LEE JU YEAB”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HYNIX SEMICONDUCTOR INC
11 patentsUS7193897B2Mar 20, 2007
NAND flash memory device capable of changing a block size
HYNIX SEMICONDUCTOR INC25 citations92
US7046554B2May 16, 2006
Page buffer of flash memory device and data program method using the same
HYNIX SEMICONDUCTOR INC32 citations92
US7796438B2Sep 14, 2010
Flash memory device and method of programming the same
HYNIX SEMICONDUCTOR INC19 citations91
US7782681B2Aug 24, 2010
Operation method of flash memory device capable of down-shifting a threshold voltage distribution of memory cells in a post-program verify operation
HYNIX SEMICONDUCTOR INC29 citations86
US7800946B2Sep 21, 2010
Flash memory device and operating method thereof
HYNIX SEMICONDUCTOR INC15 citations84
US7623385B2Nov 24, 2009
Method of reading flash memory device for depressing read disturb
HYNIX SEMICONDUCTOR INC17 citations83
US7606080B2Oct 20, 2009
Erase verifying method of NAND flash memory device
HYNIX SEMICONDUCTOR INC10 citations83
US7313024B2Dec 25, 2007
Non-volatile memory device having page buffer for verifying pre-erase
HYNIX SEMICONDUCTOR INC7 citations73
US7864581B2Jan 4, 2011
Recovery method of NAND flash memory device
HYNIX SEMICONDUCTOR INC4 citations62
US6809973B2Oct 26, 2004
Flash memory device capable of repairing a word line
HYNIX SEMICONDUCTOR INC2 citations62
US7561474B2Jul 14, 2009
Program verifying method and programming method of flash memory device
HYNIX SEMICONDUCTOR INC6 citations61
HYUNDAI ELECTRONICS IND
3 patentsUS6392929B1May 21, 2002
Method of programming a flash memory cell
HYUNDAI ELECTRONICS IND13 citations74
US6583465B1Jun 24, 2003
Code addressable memory cell in a flash memory device
HYUNDAI ELECTRONICS IND5 citations62
US6465302B1Oct 15, 2002
Method of manufacturing a flash memory device
HYUNDAI ELECTRONICS IND3 citations62