Inventor
BIRNER ALBERT
DE61 patents
⚠️ This page may combine multiple inventors who share the name “BIRNER ALBERT”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
45 patentsUS7081384B2Jul 25, 2006
Method of forming a silicon dioxide layer
INFINEON TECHNOLOGIES AG82 citations96
US7772123B2Aug 10, 2010
Through substrate via semiconductor components
INFINEON TECHNOLOGIES AG41 citations95
US6559069B2May 6, 2003
Process for the electrochemical oxidation of a semiconductor substrate
INFINEON TECHNOLOGIES AG34 citations93
US9997443B2Jun 12, 2018
Through vias and methods of formation thereof
INFINEON TECHNOLOGIES AG13 citations84
US9991373B1Jun 5, 2018
Semiconductor device
INFINEON TECHNOLOGIES AG9 citations84
US9929107B1Mar 27, 2018
Method for manufacturing a semiconductor device
INFINEON TECHNOLOGIES AG14 citations84
US7268381B2Sep 11, 2007
Memory cell with trench capacitor and vertical select transistor and an annular contact-making region formed between them
INFINEON TECHNOLOGIES AG11 citations84
US7192830B2Mar 20, 2007
Method for fabricating a memory cell
INFINEON TECHNOLOGIES AG20 citations84
US6919255B2Jul 19, 2005
Semiconductor trench structure
INFINEON TECHNOLOGIES AG16 citations84
US7157371B2Jan 2, 2007
Barrier layer and a method for suppressing diffusion processes during the production of semiconductor devices
INFINEON TECHNOLOGIES AG9 citations74
US6878600B2Apr 12, 2005
Method for fabricating trench capacitors and semiconductor device with trench capacitors
INFINEON TECHNOLOGIES AG11 citations74
US6863769B2Mar 8, 2005
Configuration and method for making contact with the back surface of a semiconductor substrate
INFINEON TECHNOLOGIES AG7 citations74
US6861312B2Mar 1, 2005
Method for fabricating a trench structure
INFINEON TECHNOLOGIES AG11 citations74
US6660582B2Dec 9, 2003
Method of forming a vertical field-effect transistor device
INFINEON TECHNOLOGIES AG11 citations74
US10622284B2Apr 14, 2020
LDMOS transistor and method
INFINEON TECHNOLOGIES AG2 citations72
US9543260B2Jan 10, 2017
Segmented bond pads and methods of fabrication thereof
INFINEON TECHNOLOGIES AG4 citations72
US10720359B2Jul 21, 2020
Substrate and method
INFINEON TECHNOLOGIES AG2 citations71
US7084043B2Aug 1, 2006
Method for forming an SOI substrate, vertical transistor and memory cell with vertical transistor
INFINEON TECHNOLOGIES AG7 citations70
US8035140B2Oct 11, 2011
Method and layout of semiconductor device with reduced parasitics
INFINEON TECHNOLOGIES AG3 citations63
US7385256B2Jun 10, 2008
Transistor arrangement in monocrystalline substrate having stress exerting insulators
INFINEON TECHNOLOGIES AG3 citations63
US7176514B2Feb 13, 2007
Method and configuration for reinforcement of a dielectric layer at defects by self-aligning and self-limiting electrochemical conversion of a substrate material
INFINEON TECHNOLOGIES AG2 citations63
US6746880B2Jun 8, 2004
Method for making electrical contact with a rear side of a semiconductor substrate during its processing
INFINEON TECHNOLOGIES AG2 citations63
US12581712B2Mar 17, 2026
Group III nitride-based transistor device having a conductive redistribution structure
INFINEON TECHNOLOGIES AG0 citations62
US12278275B2Apr 15, 2025
Selective laser annealing method
INFINEON TECHNOLOGIES AG0 citations62
US12087830B2Sep 10, 2024
Group III nitride device and method of fabricating a Group III nitride-based device
INFINEON TECHNOLOGIES AG0 citations62
US11929405B2Mar 12, 2024
Group III nitride-based transistor device having a field plate
INFINEON TECHNOLOGIES AG0 citations62
US11869963B2Jan 9, 2024
Semiconductor device and method of fabricating a semiconductor device
INFINEON TECHNOLOGIES AG0 citations62
US11581418B2Feb 14, 2023
Selective thermal annealing method
INFINEON TECHNOLOGIES AG0 citations62
US11342451B2May 24, 2022
Semiconductor device and method of fabricating a semiconductor device
INFINEON TECHNOLOGIES AG0 citations62
US11031327B2Jun 8, 2021
Through vias and methods of formation thereof
INFINEON TECHNOLOGIES AG0 citations62
US8815743B2Aug 26, 2014
Through substrate via semiconductor components and methods of formation thereof
INFINEON TECHNOLOGIES AG2 citations62
US7208370B2Apr 24, 2007
Method for fabricating a vertical transistor in a trench, and vertical transistor
INFINEON TECHNOLOGIES AG2 citations62
US11728389B2Aug 15, 2023
Group III nitride device having an ohmic contact
INFINEON TECHNOLOGIES AG0 citations61
US11302783B2Apr 12, 2022
Group III nitride device and method of fabricating an ohmic contact for a group III nitride-based device
INFINEON TECHNOLOGIES AG0 citations61
US10629727B2Apr 21, 2020
Method of manufacturing a semiconductor device including an LDMOS transistor
INFINEON TECHNOLOGIES AG1 citations61
US9530720B2Dec 27, 2016
Monitor structures and methods of formation thereof
INFINEON TECHNOLOGIES AG2 citations60
US9269807B2Feb 23, 2016
Semiconductor device and method of making the same
INFINEON TECHNOLOGIES AG0 citations52
US7074317B2Jul 11, 2006
Method for fabricating trench capacitors for large scale integrated semiconductor memories
INFINEON TECHNOLOGIES AG1 citations52
US6903454B2Jun 7, 2005
Contact spring configuration for contacting a semiconductor wafer and method for producing a contact spring configuration
INFINEON TECHNOLOGIES AG1 citations52
US12230689B2Feb 18, 2025
Semiconductor device and method for fabricating a semiconductor wafer
INFINEON TECHNOLOGIES AG0 citations51
US10672686B2Jun 2, 2020
LDMOS transistor and method
INFINEON TECHNOLOGIES AG0 citations51
US10665531B2May 26, 2020
LDMOS transistor
INFINEON TECHNOLOGIES AG0 citations51
US10403724B2Sep 3, 2019
Semiconductor wafer
INFINEON TECHNOLOGIES AG0 citations51
US10242932B2Mar 26, 2019
LDMOS transistor and method
INFINEON TECHNOLOGIES AG0 citations51
US10074721B2Sep 11, 2018
Method of fabricating a semiconductor wafer that includes producing a planarised surface having both a mesa surface and an insulating layer surface
INFINEON TECHNOLOGIES AG0 citations51
BIRNER ALBERT
3 patentsSEIDEL UWE
1 patentINFINEON TECHNOLOGIES AUSTRIA AG
1 patentShowing the top 50 of 61 patents by PatentIndex Score.