P

Inventor

BIRNER ALBERT

DE61 patents
⚠️ This page may combine multiple inventors who share the name “BIRNER ALBERT”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INFINEON TECHNOLOGIES AG

45 patents
US7081384B2Jul 25, 2006

Method of forming a silicon dioxide layer

INFINEON TECHNOLOGIES AG82 citations96
US7772123B2Aug 10, 2010

Through substrate via semiconductor components

INFINEON TECHNOLOGIES AG41 citations95
US6559069B2May 6, 2003

Process for the electrochemical oxidation of a semiconductor substrate

INFINEON TECHNOLOGIES AG34 citations93
US9997443B2Jun 12, 2018

Through vias and methods of formation thereof

INFINEON TECHNOLOGIES AG13 citations84
US9991373B1Jun 5, 2018

Semiconductor device

INFINEON TECHNOLOGIES AG9 citations84
US9929107B1Mar 27, 2018

Method for manufacturing a semiconductor device

INFINEON TECHNOLOGIES AG14 citations84
US7268381B2Sep 11, 2007

Memory cell with trench capacitor and vertical select transistor and an annular contact-making region formed between them

INFINEON TECHNOLOGIES AG11 citations84
US7192830B2Mar 20, 2007

Method for fabricating a memory cell

INFINEON TECHNOLOGIES AG20 citations84
US6919255B2Jul 19, 2005

Semiconductor trench structure

INFINEON TECHNOLOGIES AG16 citations84
US7157371B2Jan 2, 2007

Barrier layer and a method for suppressing diffusion processes during the production of semiconductor devices

INFINEON TECHNOLOGIES AG9 citations74
US6878600B2Apr 12, 2005

Method for fabricating trench capacitors and semiconductor device with trench capacitors

INFINEON TECHNOLOGIES AG11 citations74
US6863769B2Mar 8, 2005

Configuration and method for making contact with the back surface of a semiconductor substrate

INFINEON TECHNOLOGIES AG7 citations74
US6861312B2Mar 1, 2005

Method for fabricating a trench structure

INFINEON TECHNOLOGIES AG11 citations74
US6660582B2Dec 9, 2003

Method of forming a vertical field-effect transistor device

INFINEON TECHNOLOGIES AG11 citations74
US10622284B2Apr 14, 2020

LDMOS transistor and method

INFINEON TECHNOLOGIES AG2 citations72
US9543260B2Jan 10, 2017

Segmented bond pads and methods of fabrication thereof

INFINEON TECHNOLOGIES AG4 citations72
US10720359B2Jul 21, 2020

Substrate and method

INFINEON TECHNOLOGIES AG2 citations71
US7084043B2Aug 1, 2006

Method for forming an SOI substrate, vertical transistor and memory cell with vertical transistor

INFINEON TECHNOLOGIES AG7 citations70
US8035140B2Oct 11, 2011

Method and layout of semiconductor device with reduced parasitics

INFINEON TECHNOLOGIES AG3 citations63
US7385256B2Jun 10, 2008

Transistor arrangement in monocrystalline substrate having stress exerting insulators

INFINEON TECHNOLOGIES AG3 citations63
US7176514B2Feb 13, 2007

Method and configuration for reinforcement of a dielectric layer at defects by self-aligning and self-limiting electrochemical conversion of a substrate material

INFINEON TECHNOLOGIES AG2 citations63
US6746880B2Jun 8, 2004

Method for making electrical contact with a rear side of a semiconductor substrate during its processing

INFINEON TECHNOLOGIES AG2 citations63
US12581712B2Mar 17, 2026

Group III nitride-based transistor device having a conductive redistribution structure

INFINEON TECHNOLOGIES AG0 citations62
US12278275B2Apr 15, 2025

Selective laser annealing method

INFINEON TECHNOLOGIES AG0 citations62
US12087830B2Sep 10, 2024

Group III nitride device and method of fabricating a Group III nitride-based device

INFINEON TECHNOLOGIES AG0 citations62
US11929405B2Mar 12, 2024

Group III nitride-based transistor device having a field plate

INFINEON TECHNOLOGIES AG0 citations62
US11869963B2Jan 9, 2024

Semiconductor device and method of fabricating a semiconductor device

INFINEON TECHNOLOGIES AG0 citations62
US11581418B2Feb 14, 2023

Selective thermal annealing method

INFINEON TECHNOLOGIES AG0 citations62
US11342451B2May 24, 2022

Semiconductor device and method of fabricating a semiconductor device

INFINEON TECHNOLOGIES AG0 citations62
US11031327B2Jun 8, 2021

Through vias and methods of formation thereof

INFINEON TECHNOLOGIES AG0 citations62
US8815743B2Aug 26, 2014

Through substrate via semiconductor components and methods of formation thereof

INFINEON TECHNOLOGIES AG2 citations62
US7208370B2Apr 24, 2007

Method for fabricating a vertical transistor in a trench, and vertical transistor

INFINEON TECHNOLOGIES AG2 citations62
US11728389B2Aug 15, 2023

Group III nitride device having an ohmic contact

INFINEON TECHNOLOGIES AG0 citations61
US11302783B2Apr 12, 2022

Group III nitride device and method of fabricating an ohmic contact for a group III nitride-based device

INFINEON TECHNOLOGIES AG0 citations61
US10629727B2Apr 21, 2020

Method of manufacturing a semiconductor device including an LDMOS transistor

INFINEON TECHNOLOGIES AG1 citations61
US9530720B2Dec 27, 2016

Monitor structures and methods of formation thereof

INFINEON TECHNOLOGIES AG2 citations60
US9269807B2Feb 23, 2016

Semiconductor device and method of making the same

INFINEON TECHNOLOGIES AG0 citations52
US7074317B2Jul 11, 2006

Method for fabricating trench capacitors for large scale integrated semiconductor memories

INFINEON TECHNOLOGIES AG1 citations52
US6903454B2Jun 7, 2005

Contact spring configuration for contacting a semiconductor wafer and method for producing a contact spring configuration

INFINEON TECHNOLOGIES AG1 citations52
US12230689B2Feb 18, 2025

Semiconductor device and method for fabricating a semiconductor wafer

INFINEON TECHNOLOGIES AG0 citations51
US10672686B2Jun 2, 2020

LDMOS transistor and method

INFINEON TECHNOLOGIES AG0 citations51
US10665531B2May 26, 2020

LDMOS transistor

INFINEON TECHNOLOGIES AG0 citations51
US10403724B2Sep 3, 2019

Semiconductor wafer

INFINEON TECHNOLOGIES AG0 citations51
US10242932B2Mar 26, 2019

LDMOS transistor and method

INFINEON TECHNOLOGIES AG0 citations51
US10074721B2Sep 11, 2018

Method of fabricating a semiconductor wafer that includes producing a planarised surface having both a mesa surface and an insulating layer surface

INFINEON TECHNOLOGIES AG0 citations51

BIRNER ALBERT

3 patents

SEIDEL UWE

1 patent

INFINEON TECHNOLOGIES AUSTRIA AG

1 patent

Showing the top 50 of 61 patents by PatentIndex Score.