Inventor
LEE JIN-YUB
KR65 patents
⚠️ This page may combine multiple inventors who share the name “LEE JIN-YUB”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
48 patentsUS6731540B2May 4, 2004
Non-volatile semiconductor memory device having shared row selection circuit
SAMSUNG ELECTRONICS CO LTD72 citations98
US6510537B1Jan 21, 2003
Semiconductor memory device with an on-chip error correction circuit and a method for correcting a data error therein
SAMSUNG ELECTRONICS CO LTD119 citations98
US7212426B2May 1, 2007
Flash memory system capable of inputting/outputting sector data at random
SAMSUNG ELECTRONICS CO LTD73 citations97
US7813184B2Oct 12, 2010
Multi-block memory device erasing methods and related memory devices
SAMSUNG ELECTRONICS CO LTD57 citations96
US6278636B1Aug 21, 2001
Nonvolatile semiconductor memory device having improved page buffers
SAMSUNG ELECTRONICS CO LTD82 citations96
US7835193B2Nov 16, 2010
Flash memory device and method of erasing flash memory device
SAMSUNG ELECTRONICS CO LTD21 citations93
US7768828B2Aug 3, 2010
Flash memory device capable of storing multi-bit data and single-bit data
SAMSUNG ELECTRONICS CO LTD20 citations93
US7692977B2Apr 6, 2010
Voltage generator circuit capable of generating different voltages based on operating mode of non-volatile semiconductor memory device
SAMSUNG ELECTRONICS CO LTD20 citations93
US7545680B2Jun 9, 2009
Flash memory device and word line enable method thereof
SAMSUNG ELECTRONICS CO LTD24 citations93
US7433246B2Oct 7, 2008
Flash memory device capable of storing multi-bit data and single-big data
SAMSUNG ELECTRONICS CO LTD39 citations93
US7421557B2Sep 2, 2008
Method and device for performing cache reading
SAMSUNG ELECTRONICS CO LTD18 citations93
US7352630B2Apr 1, 2008
Non-volatile memory device having improved program speed and associated programming method
SAMSUNG ELECTRONICS CO LTD31 citations93
US7296128B2Nov 13, 2007
Nonvolatile memory with error correction for page copy operation and method thereof
SAMSUNG ELECTRONICS CO LTD24 citations93
US7203791B2Apr 10, 2007
Flash memory device with partial copy-back mode
SAMSUNG ELECTRONICS CO LTD19 citations93
US7224624B2May 29, 2007
Page buffer for nonvolatile semiconductor memory device and method of operation
SAMSUNG ELECTRONICS CO LTD27 citations92
US7210012B2Apr 24, 2007
Write-protection blocks for non-volatile semiconductor memory device
SAMSUNG ELECTRONICS CO LTD22 citations92
US7110301B2Sep 19, 2006
Non-volatile semiconductor memory device and multi-block erase method thereof
SAMSUNG ELECTRONICS CO LTD48 citations92
US7532495B2May 12, 2009
Nonvolatile memory device having flag cells for storing MSB program state
SAMSUNG ELECTRONICS CO LTD22 citations91
US6930919B2Aug 16, 2005
NAND-type flash memory device having array of status cells for storing block erase/program information
SAMSUNG ELECTRONICS CO LTD31 citations91
US7949819B2May 24, 2011
Flash memory device and method of changing block size in the same using address shifting
SAMSUNG ELECTRONICS CO LTD7 citations84
US7908425B2Mar 15, 2011
Method and device for performing cache reading
SAMSUNG ELECTRONICS CO LTD11 citations84
US7719897B2May 18, 2010
Program verification for non-volatile memory
SAMSUNG ELECTRONICS CO LTD10 citations84
US7486557B2Feb 3, 2009
Methods/circuits for programming flash memory devices using overlapping bit line setup and word line enable intervals
SAMSUNG ELECTRONICS CO LTD16 citations84
US7689741B2Mar 30, 2010
Dual buffer memory system for reducing data transmission time and control method thereof
SAMSUNG ELECTRONICS CO LTD11 citations82
US7652948B2Jan 26, 2010
Nonvolatile memory devices and programming methods using subsets of columns
SAMSUNG ELECTRONICS CO LTD11 citations82
US7451366B2Nov 11, 2008
Nonvolatile memory devices with test data buffers and methods for testing same
SAMSUNG ELECTRONICS CO LTD9 citations82
US7772910B2Aug 10, 2010
Internal clock generator, system and method
SAMSUNG ELECTRONICS CO LTD7 citations74
US7660159B2Feb 9, 2010
Method and device for programming control information
SAMSUNG ELECTRONICS CO LTD7 citations74
US7460403B2Dec 2, 2008
Flash memory devices and methods of operating the same
SAMSUNG ELECTRONICS CO LTD8 citations74
US11573261B2Feb 7, 2023
Semiconductor device and method of operating the same
SAMSUNG ELECTRONICS CO LTD3 citations73
US7684246B2Mar 23, 2010
Flash memory device having pump with multiple output voltages
SAMSUNG ELECTRONICS CO LTD7 citations73
US7773415B2Aug 10, 2010
Flash memory device capable of preventing soft-programming during a read operation and reading method thereof
SAMSUNG ELECTRONICS CO LTD2 citations63
US7646639B2Jan 12, 2010
Circuit and method generating program voltage for non-volatile memory device
SAMSUNG ELECTRONICS CO LTD5 citations63
US7596029B2Sep 29, 2009
Flash memory device including unified oscillation circuit and method of operating the device
SAMSUNG ELECTRONICS CO LTD2 citations63
US7586790B2Sep 8, 2009
Flash memory device and refresh method
SAMSUNG ELECTRONICS CO LTD4 citations63
US7558114B2Jul 7, 2009
Flash memory device capable of improving reliability
SAMSUNG ELECTRONICS CO LTD6 citations63
US7529127B2May 5, 2009
Memory device and method thereof
SAMSUNG ELECTRONICS CO LTD5 citations63
US7453713B2Nov 18, 2008
Dual chip package
SAMSUNG ELECTRONICS CO LTD2 citations63
US7440320B2Oct 21, 2008
Row decoder for preventing leakage current and semiconductor memory device including the same
SAMSUNG ELECTRONICS CO LTD4 citations63
US7382663B2Jun 3, 2008
Erase voltage generator circuit for providing uniform erase execution time and nonvolatile memory device having the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US7369442B2May 6, 2008
Erase discharge method of memory device and discharge circuit performing the method
SAMSUNG ELECTRONICS CO LTD4 citations63
US7324378B2Jan 29, 2008
Method of driving a program operation in a nonvolatile semiconductor memory device
SAMSUNG ELECTRONICS CO LTD4 citations63
US7272048B2Sep 18, 2007
Nonvolatile memory device controlling common source line for improving read characteristic
SAMSUNG ELECTRONICS CO LTD6 citations63
US11125811B2Sep 21, 2021
Semiconductor device and method of operating the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US8982620B2Mar 17, 2015
Non-volatile memory device and method of operating
SAMSUNG ELECTRONICS CO LTD2 citations62
US7907454B2Mar 15, 2011
Method of verifying programming operation of flash memory device
SAMSUNG ELECTRONICS CO LTD6 citations62
US7876613B2Jan 25, 2011
Multi-bit flash memory devices having a single latch structure and related programming methods, systems and memory cards
SAMSUNG ELECTRONICS CO LTD2 citations62
US7394700B2Jul 1, 2008
Programming methods for a nonvolatile memory device using a Y-scan operation during a verify read operation
SAMSUNG ELECTRONICS CO LTD3 citations62
PARK JUNE-HONG
1 patentGANGASANI VENKATARAMANA
1 patentShowing the top 50 of 65 patents by PatentIndex Score.