Inventor
URAKAMI YASUSHI
JP35 patents
⚠️ This page may combine multiple inventors who share the name “URAKAMI YASUSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOYOTA MOTOR CO LTD
14 patentsUS10243035B2Mar 26, 2019
Method of manufacturing switching element
TOYOTA MOTOR CO LTD3 citations73
US10056374B2Aug 21, 2018
Switching device
TOYOTA MOTOR CO LTD3 citations73
US10170470B2Jan 1, 2019
Switching device
TOYOTA MOTOR CO LTD2 citations72
US10121862B2Nov 6, 2018
Switching device and method of manufacturing the same
TOYOTA MOTOR CO LTD5 citations70
US10367091B2Jul 30, 2019
Semiconductor switching element
TOYOTA MOTOR CO LTD1 citations62
US10263071B2Apr 16, 2019
Method of manufacturing semiconductor device
TOYOTA MOTOR CO LTD0 citations52
US10985241B2Apr 20, 2021
Semiconductor device and production method thereof
TOYOTA MOTOR CO LTD0 citations50
US10770579B2Sep 8, 2020
SiC-MOSFET and method of manufacturing the same
TOYOTA MOTOR CO LTD0 citations42
US10374081B2Aug 6, 2019
Semiconductor switching element
TOYOTA MOTOR CO LTD0 citations42
US10840386B2Nov 17, 2020
Semiconductor apparatus
TOYOTA MOTOR CO LTD0 citations41
US10770580B2Sep 8, 2020
Semiconductor device
TOYOTA MOTOR CO LTD0 citations41
US10522627B2Dec 31, 2019
Semiconductor device
TOYOTA MOTOR CO LTD0 citations41
US10204980B2Feb 12, 2019
Semiconductor device and manufacturing method of the same
TOYOTA MOTOR CO LTD0 citations41
US10326015B2Jun 18, 2019
Switching element and method of manufacturing the same
TOYOTA MOTOR CO LTD0 citations39
DENSO CORP
12 patentsUS6495294B1Dec 17, 2002
Method for manufacturing semiconductor substrate having an epitaxial film in the trench
DENSO CORP117 citations97
US6495883B2Dec 17, 2002
Trench gate type semiconductor device and method of manufacturing
DENSO CORP62 citations96
US6406982B2Jun 18, 2002
Method of improving epitaxially-filled trench by smoothing trench prior to filling
DENSO CORP27 citations92
US7564095B2Jul 21, 2009
Semiconductor device and method for manufacturing the same
DENSO CORP9 citations84
US12324187B2Jun 3, 2025
Switching element
DENSO CORP1 citations63
US7838995B2Nov 23, 2010
Semiconductor device having p-n column portion
DENSO CORP5 citations63
US6642577B2Nov 4, 2003
Semiconductor device including power MOSFET and peripheral device and method for manufacturing the same
DENSO CORP5 citations63
US12100763B2Sep 24, 2024
Semiconductor device having cell section with gate structures partly covered with protective film
DENSO CORP1 citations62
US10923395B2Feb 16, 2021
Semiconductor device and manufacturing method of semiconductor device
DENSO CORP0 citations62
US7063751B2Jun 20, 2006
Semiconductor substrate formed by epitaxially filling a trench in a semiconductor substrate with a semiconductor material after smoothing the surface and rounding the corners
DENSO CORP5 citations62
US11393902B2Jul 19, 2022
Semiconductor device
DENSO CORP0 citations52
US11004765B2May 11, 2021
Field-effect transistor with a heat absorber in contact with a surface of the gate electrode on its back side
DENSO CORP0 citations52
TOYOTA CHUO KENKYUSHO KK
3 patentsUS9048102B2Jun 2, 2015
SiC single crystal, SiC wafer, and semiconductor device
TOYOTA CHUO KENKYUSHO KK2 citations61
US10125435B2Nov 13, 2018
SiC single crystal, SiC wafer, SiC substrate, and SiC device
TOYOTA CHUO KENKYUSHO KK0 citations51
US9534317B2Jan 3, 2017
Seed crystal for SiC single-crystal growth, SiC single crystal, and method of manufacturing the SiC single crystal
TOYOTA CHUO KENKYUSHO KK0 citations37
URAKAMI YASUSHI
3 patentsUS8936682B2Jan 20, 2015
Method of manufacturing homogeneous silicon carbide single crystal with low potential of generating defects
URAKAMI YASUSHI3 citations58
US9145622B2Sep 29, 2015
Manufacturing method of silicon carbide single crystal
URAKAMI YASUSHI0 citations37
US9051663B2Jun 9, 2015
Manufacturing method of silicon carbide single crystal
URAKAMI YASUSHI0 citations37