P

Inventor

YAMAUCHI SHOICHI

JP35 patents
⚠️ This page may combine multiple inventors who share the name “YAMAUCHI SHOICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

DENSO CORP

22 patents
US6191007B1Feb 20, 2001

Method for manufacturing a semiconductor substrate

DENSO CORP759 citations99
US6251754B1Jun 26, 2001

Semiconductor substrate manufacturing method

DENSO CORP326 citations98
US6495294B1Dec 17, 2002

Method for manufacturing semiconductor substrate having an epitaxial film in the trench

DENSO CORP117 citations97
US6534380B1Mar 18, 2003

Semiconductor substrate and method of manufacturing the same

DENSO CORP471 citations96
US6495883B2Dec 17, 2002

Trench gate type semiconductor device and method of manufacturing

DENSO CORP62 citations96
US6836001B2Dec 28, 2004

Semiconductor device having epitaxially-filled trench and method for manufacturing semiconductor device having epitaxially-filled trench

DENSO CORP30 citations92
US6406982B2Jun 18, 2002

Method of improving epitaxially-filled trench by smoothing trench prior to filling

DENSO CORP27 citations92
US7170119B2Jan 30, 2007

Vertical type semiconductor device

DENSO CORP43 citations91
US7465990B2Dec 16, 2008

Semiconductor device having super junction structure

DENSO CORP9 citations84
US7417284B2Aug 26, 2008

Semiconductor device and method of manufacturing the same

DENSO CORP9 citations84
US7342265B2Mar 11, 2008

Vertical-type semiconductor device having repetitive-pattern layer

DENSO CORP11 citations84
US7037789B2May 2, 2006

Stabilization of dopant concentration in semiconductor device having epitaxially-filled trench

DENSO CORP11 citations84
US7811907B2Oct 12, 2010

Method for manufacturing semiconductor device and epitaxial growth equipment

DENSO CORP14 citations83
US7642178B2Jan 5, 2010

Semiconductor device, method for manufacturing the same and method for evaluating the same

DENSO CORP13 citations83
US7601603B2Oct 13, 2009

Method for manufacturing semiconductor device

DENSO CORP10 citations83
US7553731B2Jun 30, 2009

Method of manufacturing semiconductor device

DENSO CORP6 citations73
US7633123B2Dec 15, 2009

Semiconductor device having super junction structure

DENSO CORP4 citations63
US7342422B2Mar 11, 2008

Semiconductor device having super junction structure and method for manufacturing the same

DENSO CORP3 citations63
US6642577B2Nov 4, 2003

Semiconductor device including power MOSFET and peripheral device and method for manufacturing the same

DENSO CORP5 citations63
US7063751B2Jun 20, 2006

Semiconductor substrate formed by epitaxially filling a trench in a semiconductor substrate with a semiconductor material after smoothing the surface and rounding the corners

DENSO CORP5 citations62
US7026248B2Apr 11, 2006

Method for manufacturing semiconductor device with semiconductor region inserted into trench

DENSO CORP3 citations62
US7517771B2Apr 14, 2009

Method for manufacturing semiconductor device having trench

DENSO CORP1 citations52

TOSOH CORP

6 patents

SUMCO CORP

4 patents

YAMAUCHI SHOICHI

2 patents

NOGAMI SYOUJI

1 patent