Inventor
TSUJI NOBUHIRO
JP24 patents
⚠️ This page may combine multiple inventors who share the name “TSUJI NOBUHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA MEMORY CORP
10 patentsUS10769011B2Sep 8, 2020
Memory device that changes a writable region of a data buffer based on an operational state of an ECC circuit
TOSHIBA MEMORY CORP2 citations71
US10621034B2Apr 14, 2020
Memory device that changes a writable region of a data buffer based on an operational state of an ECC circuit
TOSHIBA MEMORY CORP2 citations71
US10289482B2May 14, 2019
Memory device that updates parameters transmitted to a host based on operational settings
TOSHIBA MEMORY CORP3 citations71
US9959937B2May 1, 2018
Memory system including test circuit
TOSHIBA MEMORY CORP3 citations71
US9891987B2Feb 13, 2018
Memory device that communicates error correction results to a host
TOSHIBA MEMORY CORP2 citations71
US10445174B2Oct 15, 2019
Memory device that communicates error correction results to a host
TOSHIBA MEMORY CORP0 citations51
US10310755B2Jun 4, 2019
Memory system having a semiconductor memory device with protected blocks
TOSHIBA MEMORY CORP0 citations51
US10235070B2Mar 19, 2019
Memory system having a semiconductor memory device with protected blocks
TOSHIBA MEMORY CORP0 citations51
US10535385B2Jan 14, 2020
Semiconductor integrated circuit and semiconductor device
TOSHIBA MEMORY CORP0 citations45
US10403341B2Sep 3, 2019
Semiconductor integrated circuit and semiconductor device
TOSHIBA MEMORY CORP0 citations45
DENSO CORP
4 patentsUS6836001B2Dec 28, 2004
Semiconductor device having epitaxially-filled trench and method for manufacturing semiconductor device having epitaxially-filled trench
DENSO CORP30 citations92
US6406982B2Jun 18, 2002
Method of improving epitaxially-filled trench by smoothing trench prior to filling
DENSO CORP27 citations92
US7063751B2Jun 20, 2006
Semiconductor substrate formed by epitaxially filling a trench in a semiconductor substrate with a semiconductor material after smoothing the surface and rounding the corners
DENSO CORP5 citations62
US7026248B2Apr 11, 2006
Method for manufacturing semiconductor device with semiconductor region inserted into trench
DENSO CORP3 citations62