Inventor
PALLEM VENKATESWARA R
US36 patents
⚠️ This page may combine multiple inventors who share the name “PALLEM VENKATESWARA R”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
AIR LIQUIDE AMERICAN
28 patentsUS9382268B1Jul 5, 2016
Sulfur containing organosilane precursors for ALD/CVD silicon-containing film applications
AIR LIQUIDE AMERICAN19 citations92
US9371338B2Jun 21, 2016
Organosilane precursors for ALD/CVD silicon-containing film applications
AIR LIQUIDE AMERICAN22 citations92
US10217681B1Feb 26, 2019
Gases for low damage selective silicon nitride etching
AIR LIQUIDE AMERICAN7 citations84
US8809849B2Aug 19, 2014
Preparation of cerium-containing precursors and deposition of cerium-containing films
AIR LIQUIDE AMERICAN4 citations84
US10629451B1Apr 21, 2020
Method to improve profile control during selective etching of silicon nitride spacers
AIR LIQUIDE AMERICAN6 citations83
US9659788B2May 23, 2017
Nitrogen-containing compounds for etching semiconductor structures
AIR LIQUIDE AMERICAN13 citations83
US9701695B1Jul 11, 2017
Synthesis methods for amino(halo)silanes
AIR LIQUIDE AMERICAN13 citations82
US9822132B2Nov 21, 2017
Hexacoordinate silicon-containing precursors for ALD/CVD silicon-containing film applications
AIR LIQUIDE AMERICAN3 citations73
US9773683B2Sep 26, 2017
Atomic layer or cyclic plasma etching chemistries and processes
AIR LIQUIDE AMERICAN5 citations73
US9711347B2Jul 18, 2017
Preparation of lanthanide-containing precursors and deposition of lanthanide-containing films
AIR LIQUIDE AMERICAN4 citations73
US11430663B2Aug 30, 2022
Iodine-containing compounds for etching semiconductor structures
AIR LIQUIDE AMERICAN3 citations72
US10607850B2Mar 31, 2020
Iodine-containing compounds for etching semiconductor structures
AIR LIQUIDE AMERICAN4 citations72
US10256109B2Apr 9, 2019
Nitrogen-containing compounds for etching semiconductor structures
AIR LIQUIDE AMERICAN2 citations72
US9773679B2Sep 26, 2017
Method of etching semiconductor structures with etch gas
AIR LIQUIDE AMERICAN3 citations72
US9969756B2May 15, 2018
Carbosilane substituted amine precursors for deposition of Si-containing films and methods thereof
AIR LIQUIDE AMERICAN2 citations71
US9384963B2Jul 5, 2016
Preparation of cerium-containing precursor and deposition of cerium-containing films
AIR LIQUIDE AMERICAN2 citations62
US12327732B2Jun 10, 2025
Method to improve profile control during selective etching of silicon nitride spacers
AIR LIQUIDE AMERICAN0 citations61
US11837474B2Dec 5, 2023
Method to improve profile control during selective etching of silicon nitride spacers
AIR LIQUIDE AMERICAN0 citations61
US11469110B2Oct 11, 2022
Method to improve profile control during selective etching of silicon nitride spacers
AIR LIQUIDE AMERICAN0 citations61
US12435096B2Oct 7, 2025
Indium precursors for vapor depositions
AIR LIQUIDE AMERICAN0 citations52
US10053775B2Aug 21, 2018
Methods of using amino(bromo)silane precursors for ALD/CVD silicon-containing film applications
AIR LIQUIDE AMERICAN0 citations52
US9938303B2Apr 10, 2018
Organosilane precursors for ALD/CVD silicon-containing film applications
AIR LIQUIDE AMERICAN0 citations52
US9593133B2Mar 14, 2017
Organosilane precursors for ALD/CVD silicon-containing film applications
AIR LIQUIDE AMERICAN0 citations52
US9076648B2Jul 7, 2015
Preparation of lanthanide-containing precursors and deposition of lanthanide-containing films
AIR LIQUIDE AMERICAN0 citations52
US8633329B2Jan 21, 2014
Titanium-containing precursors for vapor deposition
AIR LIQUIDE AMERICAN0 citations52
US10115600B2Oct 30, 2018
Method of etching semiconductor structures with etch gas
AIR LIQUIDE AMERICAN1 citations51
US12187853B2Jan 7, 2025
Silicon-based self-assembling monolayer compositions and surface preparation using the same
AIR LIQUIDE AMERICAN0 citations50
US10006122B2Jun 26, 2018
Organodisilane precursors for ALD/CVD silicon-containing film applications
AIR LIQUIDE AMERICAN0 citations50
PALLEM VENKATESWARA R
3 patentsUS8283201B2Oct 9, 2012
Preparation of lanthanide-containing precursors and deposition of lanthanide-containing films
PALLEM VENKATESWARA R13 citations91
US8404878B2Mar 26, 2013
Titanium-containing precursors for vapor deposition
PALLEM VENKATESWARA R4 citations61
US9087690B2Jul 21, 2015
Hafnium-containing and zirconium-containing precursors for vapor deposition
PALLEM VENKATESWARA R0 citations51