P

Inventor

SAKAI MASAHIRO

JP72 patents
⚠️ This page may combine multiple inventors who share the name “SAKAI MASAHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NGK INSULATORS LTD

17 patents
US7965015B2Jun 21, 2011

Lamb wave device

NGK INSULATORS LTD151 citations96
US7598826B2Oct 6, 2009

Piezoelectric thin film device having a drive section with a weighted portion

NGK INSULATORS LTD11 citations84
US8795431B2Aug 5, 2014

Method for producing gallium nitride layer and seed crystal substrate used in same

NGK INSULATORS LTD7 citations81
US11309455B2Apr 19, 2022

Group 13 element nitride layer, free-standing substrate and functional element

NGK INSULATORS LTD2 citations73
US9090988B2Jul 28, 2015

Method of producing crystals of nitrides of group 13 elements and melt compositions

NGK INSULATORS LTD4 citations73
US7825417B2Nov 2, 2010

Epitaxial wafers, method for manufacturing of epitaxial wafers, method of suppressing bowing of these epitaxial wafers and semiconductor multilayer structures using these epitaxial wafers

NGK INSULATORS LTD6 citations73
US12564023B2Feb 24, 2026

Free-standing substrate for epitaxial crystal growth, and functional element

NGK INSULATORS LTD0 citations63
US11862689B2Jan 2, 2024

Group-III element nitride semiconductor substrate

NGK INSULATORS LTD0 citations63
US10192738B2Jan 29, 2019

Methods of producing seed crystal substrates and group 13 element nitride crystals, and seed crystal substrates

NGK INSULATORS LTD1 citations63
US7135347B2Nov 14, 2006

Method for manufacturing nitride film including high-resistivity GaN layer and epitaxial substrate manufactured by the method

NGK INSULATORS LTD2 citations63
US11611017B2Mar 21, 2023

Group 13 element nitride layer, free-standing substrate and functional element

NGK INSULATORS LTD1 citations62
US11088299B2Aug 10, 2021

Group 13 element nitride layer, free-standing substrate and functional element

NGK INSULATORS LTD1 citations62
US11011678B2May 18, 2021

Group 13 element nitride layer, free-standing substrate and functional element

NGK INSULATORS LTD1 citations62
US7479658B2Jan 20, 2009

Epitaxial wafers, method for manufacturing of epitaxial wafers, method of suppressing bowing of these epitaxial wafers and semiconductor multilayer structures using these epitaxial wafers

NGK INSULATORS LTD2 citations62
US11437233B2Sep 6, 2022

Base substrate, functional element, and method for manufacturing base substrate

NGK INSULATORS LTD1 citations61
US11245054B2Feb 8, 2022

Base substrate, functional element, and production method for base substrate

NGK INSULATORS LTD0 citations61
US12057307B2Aug 6, 2024

Group-III element nitride semiconductor substrate

NGK INSULATORS LTD0 citations59

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD

9 patents

SHARP KK

6 patents

TOYO BOSEKI

3 patents

TOSHIBA KK

2 patents

PANASONIC CORP

2 patents

SHINETSU HANDOTAI KK

1 patent

RENESAS TECH CORP

1 patent

MITSUBISHI ELECTRIC CORP

1 patent

PANASONIC IP MAN CO LTD

1 patent

YOKOGAWA ELECTRIC CORP

1 patent

KUROSAKI REFRACTORIES CO

1 patent

RENESAS ELECTRONICS CORP

1 patent

YAMAUCHI YASUHIRO

1 patent

IMAI TAKEO

1 patent

NTT DOCOMO INC

1 patent

SAKAI MASAHIRO

1 patent

Showing the top 50 of 72 patents by PatentIndex Score.