Inventor

ZHANG KUNLIANG

US132 patents

⚠️ This page may combine multiple inventors who share the name “ZHANG KUNLIANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ZHANG KUNLIANG

HEADWAY TECHNOLOGIES INC

Low resistance tunneling magnetoresistive sensor with composite inner pinned layer

Method of adjusting CoFe free layer magnetostriction

CPP device with an enhanced dR/R ratio

TMR or CPP structure with improved exchange properties

Enhanced hard bias in thin film magnetoresistive sensors with perpendicular easy axis growth of hard bias and strong shield-hard bias coupling

Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier

Heusler alloy with insertion layer to reduce the ordering temperature for CPP, TMR, MRAM, and other spintronics applications

GMR device having an improved free layer

TMR device with Hf based seed layer

Composite hard bias design with a soft magnetic underlayer for sensor applications

Magnetoresistive spin valve sensor with tri-layer free layer

Abutted exchange bias design for sensor stabilization

Thin seeded antiferromagnetic coupled side shield for sensor biasing applications

Perpendicular magnetic recording head laminated with AFM-FM phase change material

Method to form a current confining path of a CPP GMR device

FCC-like trilayer AP2 structure for CPP GMR EM improvement

CoFe/Ni multilayer film with perpendicular anisotropy for microwave assisted magnetic recording

High moment wrap-around shields for magnetic read head improvements

High moment wrap shields for magnetic read head to improve micro-magnetic read width

CoFe/Ni Multilayer film with perpendicular anisotropy for microwave assisted magnetic recording

Magnetic seed method for improving blocking temperature and shield to shield spacing in a TMR sensor

ZHANG KUNLIANG

Thin seeded Co/Ni multilayer film with perpendicular anisotropy for spintronic device applications

Assisting FGL oscillations with perpendicular anisotropy for MAMR

Modified field generation layer for microwave assisted magnetic recording

MTJ incorporating CoFe/Ni multilayer film with perpendicular magnetic anisotropy for MRAM application

Multilayer structure with high perpendicular anisotropy for device applications

Spin injection layer robustness for microwave assisted magnetic recording

CoFe/Ni Multilayer film with perpendicular anistropy for microwave assisted magnetic recording

Seed layer for TMR or CPP-GMR sensor

TMR or CPP structure with improved exchange properties

Ultra low RA (resistance x area) sensors having a multilayer non-magnetic spacer between pinned and free layers

ZHAO TONG

TMR device with novel free layer structure

TMR device with novel free layer structure

TMR device with novel free layer structure

Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier

TMR device with novel free layer structure

Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier

TMR device with improved MgO barrier

ZHOU YUCHEN

Field tunable spin torque oscillator for RF signal generation

Side shielded magnetoresistive (MR) read head with perpendicular magnetic free layer

Perpendicular magnetic recording head laminated with AFM-FM phase change material

Enhanced hard bias in thin film magnetoresistive sensors with perpendicular easy axis growth of hard bias and strong shield-hard bias coupling

HEADWAY TECH INC

Adaptive bias control for magnetic recording head

Rhodium film with thin template layer and its application to a thermally assisted magnetic recording (TAMR) writer

Magnetic reader sensor with shield spacing improvement and better pin flip robustness

CoFe/Ni multilayer film with perpendicular anisotropy for microwave assisted magnetic recording

WANG HUI-CHUAN

TMR device with low magnetorestriction free layer

Magnetic memory cell

TDK CORP

CPP device with a plurality of metal oxide templates in a confining current path (CCP) spacer

TOSHIBA KK

Magneto-resistance effect element, and method for manufacturing the same