Inventor
LENGADE SWAPNIL
US26 patents
⚠️ This page may combine multiple inventors who share the name “LENGADE SWAPNIL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
20 patentsUS10903276B2Jan 26, 2021
Methods of forming metal on inhomogeneous surfaces and structures incorporating metal on inhomogeneous surfaces
MICRON TECHNOLOGY INC37 citations92
US9281471B2Mar 8, 2016
Phase change memory stack with treated sidewalls
MICRON TECHNOLOGY INC14 citations92
US10224479B2Mar 5, 2019
Phase change memory stack with treated sidewalls
MICRON TECHNOLOGY INC4 citations84
US10177198B2Jan 8, 2019
Phase change memory stack with treated sidewalls
MICRON TECHNOLOGY INC6 citations84
US10079340B2Sep 18, 2018
Phase change memory stack with treated sidewalls
MICRON TECHNOLOGY INC6 citations84
US9673256B2Jun 6, 2017
Phase change memory stack with treated sidewalls
MICRON TECHNOLOGY INC9 citations84
US9306159B2Apr 5, 2016
Phase change memory stack with treated sidewalls
MICRON TECHNOLOGY INC10 citations84
US10256406B2Apr 9, 2019
Semiconductor structures including liners and related methods
MICRON TECHNOLOGY INC12 citations83
US10720574B2Jul 21, 2020
Phase change memory stack with treated sidewalls
MICRON TECHNOLOGY INC1 citations73
US10546895B2Jan 28, 2020
Phase change memory stack with treated sidewalls
MICRON TECHNOLOGY INC2 citations73
US11038107B2Jun 15, 2021
Semiconductor devices including liners, and related systems
MICRON TECHNOLOGY INC2 citations72
US9324945B2Apr 26, 2016
Memory cells and methods of forming memory cells
MICRON TECHNOLOGY INC5 citations71
US10510805B2Dec 17, 2019
Methods of forming metal on inhomogeneous surfaces and structures incorporating metal on inhomogeneous surfaces
MICRON TECHNOLOGY INC4 citations70
US12426261B2Sep 23, 2025
Integrated circuitry comprising a memory array comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells
MICRON TECHNOLOGY INC0 citations62
US12342542B2Jun 24, 2025
Integrated circuitry comprising a memory array comprising strings of memory cells and comprising a stack containing non-stoichiometric silicon nitride
MICRON TECHNOLOGY INC0 citations62
US11792983B2Oct 17, 2023
Integrated circuitry comprising a memory array comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells
MICRON TECHNOLOGY INC0 citations62
US11552090B2Jan 10, 2023
Integrated circuitry comprising a memory array comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells
MICRON TECHNOLOGY INC0 citations62
US11706924B2Jul 18, 2023
Integrated assemblies and methods of forming integrated assemblies
MICRON TECHNOLOGY INC0 citations60
US11329064B2May 10, 2022
Integrated assemblies and methods of forming integrated assemblies
MICRON TECHNOLOGY INC0 citations60
US12004346B2Jun 4, 2024
Microelectronic devices with nitrogen-rich insulative structures
MICRON TECHNOLOGY INC0 citations43