Inventor

LUTZE JEFFREY W

US93 patents

⚠️ This page may combine multiple inventors who share the name “LUTZE JEFFREY W”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LUTZE JEFFREY W

SANDISK CORP

Behavior based programming of non-volatile memory

Non-volatile memory cell using high-k material inter-gate programming

Detecting over programmed memory

Source side self boosting technique for non-volatile memory

Non-volatile memory using multiple boosting modes for reduced program disturb

Word line compensation in non-volatile memory erase operations

Programming non-volatile memory with reduced program disturb by removing pre-charge dependency on word line data

Last-first mode and method for programming of non-volatile memory with reduced program disturb

Last-first mode and apparatus for programming of non-volatile memory with reduced program disturb

Pillar cell flash memory technology

System for programming non-volatile memory with self-adjusting maximum program loop

Comprehensive erase verification for non-volatile memory

Source side self boosting technique for non-volatile memory

Detecting over programmed memory after further programming

Word line compensation in non-volatile memory erase operations

Non-volatile memory cell using high-K material and inter-gate programming

Shield plate for limiting cross coupling between floating gates

Comprehensive erase verification for non-volatile memory

Apparatus for controlled programming of non-volatile memory exhibiting bit line coupling

Selective erase operation for non-volatile storage

Correcting for over programming non-volatile storage

Multi-pass programming for memory using word line coupling

Non-volatile memory using multiple boosting modes for reduced program disturb

Enhanced bit-line pre-charge scheme for increasing channel boosting in non-volatile storage

Behavior based programming of non-volatile memory

Reducing program disturb in non-volatile storage using early source-side boosting

Memories with alternate sensing techniques

Self-aligned non-volatile memory cell

Systems for programming non-volatile memory with reduced program disturb by removing pre-charge dependency on word line data

Systems for programming non-volatile memory with reduced program disturb by using different pre-charge enable voltages

Alternate sensing techniques for non-volatile memories

Boosting for non-volatile storage using channel isolation switching

Programming non-volatile memory with reduced program disturb by using different pre-charge enable voltages

Apparatus with segmented bitscan for verification of programming

Reducing program disturb in non-volatile memory using multiple boosting modes

Alternate sensing techniques for non-volatile memories

Pillar cell flash memory technology

Method for programming non-volatile memory with self-adjusting maximum program loop

Detecting over programmed memory

Method of manufacturing self aligned non-volatile memory cells

Compensating for coupling during read operations in non-volatile storage

Retention margin program verification

DUTTA DEEPANSHU

Natural threshold voltage distribution compaction in non-volatile memory

Programming non-volatile memory with bit line voltage step up

Data state-dependent channel boosting to reduce channel-to-floating gate coupling in memory

SANDISK TECHNOLOGIES INC

Compensating non-volatile storage using different pass voltages during program-verify and read

Programming and selectively erasing non-volatile storage

Controlling select gate voltage during erase to improve endurance in non-volatile memory

LUTZE JEFFREY W

Pair bit line programming to improve boost voltage clamping

Correcting for over programming non-volatile storage