P

Inventor

KADO MOTOHISA

JP15 patents
⚠️ This page may combine multiple inventors who share the name “KADO MOTOHISA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOYOTA MOTOR CO LTD

7 patents
US10450671B2Oct 22, 2019

SiC single crystal and method for producing same

TOYOTA MOTOR CO LTD2 citations71
US11152225B1Oct 19, 2021

Method for producing semiconductor element

TOYOTA MOTOR CO LTD3 citations68
US9523156B2Dec 20, 2016

SiC single crystal ingot and production method therefor

TOYOTA MOTOR CO LTD2 citations61
US10968535B2Apr 6, 2021

SiC single crystal production method and production apparatus

TOYOTA MOTOR CO LTD0 citations60
US10100432B2Oct 16, 2018

Apparatus for producing SiC single crystal and method for producing SiC single crystal

TOYOTA MOTOR CO LTD0 citations51
US9530642B2Dec 27, 2016

Method for producing SiC single crystal

TOYOTA MOTOR CO LTD0 citations51
US10081883B2Sep 25, 2018

SiC single crystal production method and production apparatus

TOYOTA MOTOR CO LTD0 citations50

KAMEI KAZUHITO

2 patents
US9388508B2Jul 12, 2016

Manufacturing apparatus of SiC single crystal, jig for use in the manufacturing apparatus, and method for manufacturing SiC single crystal

KAMEI KAZUHITO0 citations48
US9702056B2Jul 11, 2017

Production apparatus of SiC single crystal by solution growth method, method for producing SiC single crystal using the production apparatus, and crucible used in the production apparatus

KAMEI KAZUHITO0 citations38

OKADA NOBUHIRO

1 patent
US9617655B2Apr 11, 2017

Manufacturing apparatus of SiC single crystal and method for manufacturing SiC single crystal

OKADA NOBUHIRO2 citations69

NIPPON STEEL & SUMITOMO METAL CORP

1 patent
US9896778B2Feb 20, 2018

Apparatus for producing SiC single crystals and method of producing SiC single crystals using said production apparatus

NIPPON STEEL & SUMITOMO METAL CORP0 citations51

DAIKOKU HIRONORI

1 patent
US9708734B2Jul 18, 2017

Method for producing a SiC single crystal in the presence of a magnetic field which is applied to a solution

DAIKOKU HIRONORI0 citations45

KUSUNOKI KAZUHIKO

1 patent
US9732441B2Aug 15, 2017

Production apparatus and production method of SiC single crystal

KUSUNOKI KAZUHIKO0 citations39

YASHIRO NOBUYOSHI

1 patent
US9783911B2Oct 10, 2017

Apparatus for producing SiC single crystal by solution growth method, and method for producing SiC single crystal by using the production apparatus and crucible used in the production apparatus

YASHIRO NOBUYOSHI0 citations33

KADO MOTOHISA

1 patent
US9624599B2Apr 18, 2017

SiC single crystal manufacturing method using alternating states of supersaturation

KADO MOTOHISA0 citations33