Inventor
DAIKOKU HIRONORI
JP25 patents
⚠️ This page may combine multiple inventors who share the name “DAIKOKU HIRONORI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOYOTA MOTOR CO LTD
12 patentsUS10450671B2Oct 22, 2019
SiC single crystal and method for producing same
TOYOTA MOTOR CO LTD2 citations71
US12261296B2Mar 25, 2025
Active material
TOYOTA MOTOR CO LTD0 citations62
US11901556B2Feb 13, 2024
Active material
TOYOTA MOTOR CO LTD0 citations62
US11502298B2Nov 15, 2022
Active material
TOYOTA MOTOR CO LTD0 citations62
US9523156B2Dec 20, 2016
SiC single crystal ingot and production method therefor
TOYOTA MOTOR CO LTD2 citations61
US10968535B2Apr 6, 2021
SiC single crystal production method and production apparatus
TOYOTA MOTOR CO LTD0 citations60
US10100432B2Oct 16, 2018
Apparatus for producing SiC single crystal and method for producing SiC single crystal
TOYOTA MOTOR CO LTD0 citations51
US9920449B2Mar 20, 2018
Production method of SiC single crystal
TOYOTA MOTOR CO LTD0 citations51
US10145025B2Dec 4, 2018
Method for producing SiC single crystal
TOYOTA MOTOR CO LTD0 citations50
US10119199B2Nov 6, 2018
Method for producing SiC single crystal
TOYOTA MOTOR CO LTD0 citations50
US10081883B2Sep 25, 2018
SiC single crystal production method and production apparatus
TOYOTA MOTOR CO LTD0 citations50
US9822468B2Nov 21, 2017
Method for producing SiC single crystal
TOYOTA MOTOR CO LTD0 citations39
ROHM CO LTD
2 patentsKUSUNOKI KAZUHIKO
2 patentsKAMEI KAZUHITO
2 patentsUS9388508B2Jul 12, 2016
Manufacturing apparatus of SiC single crystal, jig for use in the manufacturing apparatus, and method for manufacturing SiC single crystal
KAMEI KAZUHITO0 citations48
US9702056B2Jul 11, 2017
Production apparatus of SiC single crystal by solution growth method, method for producing SiC single crystal using the production apparatus, and crucible used in the production apparatus
KAMEI KAZUHITO0 citations38
DAIKOKU HIRONORI
2 patentsUS9708734B2Jul 18, 2017
Method for producing a SiC single crystal in the presence of a magnetic field which is applied to a solution
DAIKOKU HIRONORI0 citations45
US9631295B2Apr 25, 2017
Method for producing SiC single crystals by control of an angle formed by the meniscus and the side face of the seed crystal and production device for the method
DAIKOKU HIRONORI0 citations45