P

Inventor

CHI KYEONG-KOO

KR52 patents
⚠️ This page may combine multiple inventors who share the name “CHI KYEONG-KOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

43 patents
US6767834B2Jul 27, 2004

Method of manufacturing a contact of a semiconductor device using cluster apparatus having at least one plasma pretreatment module

SAMSUNG ELECTRONICS CO LTD198 citations98
US7540970B2Jun 2, 2009

Methods of fabricating a semiconductor device

SAMSUNG ELECTRONICS CO LTD27 citations92
US7319255B2Jan 15, 2008

Semiconductor device including a metal gate electrode formed in a trench and method of forming thereof

SAMSUNG ELECTRONICS CO LTD35 citations92
US6867096B2Mar 15, 2005

Method of fabricating semiconductor device having capacitor

SAMSUNG ELECTRONICS CO LTD16 citations92
US6793767B2Sep 21, 2004

Wafer stage including electrostatic chuck and method for dechucking wafer using the wafer stage

SAMSUNG ELECTRONICS CO LTD26 citations92
US6534921B1Mar 18, 2003

Method for removing residual metal-containing polymer material and ion implanted photoresist in atmospheric downstream plasma jet system

SAMSUNG ELECTRONICS CO LTD45 citations92
US5903351AMay 11, 1999

Method and apparatus for selective spectroscopic analysis of a wafer surface and gas phase elements in a reaction chamber

SAMSUNG ELECTRONICS CO LTD29 citations92
US5859501AJan 12, 1999

Radio frequency generating systems and methods for forming pulse plasma using gradually pulsed time-modulated radio frequency power

SAMSUNG ELECTRONICS CO LTD29 citations92
US6607954B2Aug 19, 2003

Methods of fabricating cylinder-type capacitors for semiconductor devices using a hard mask and a mold layer

SAMSUNG ELECTRONICS CO LTD20 citations91
US7402488B2Jul 22, 2008

Method of manufacturing a semiconductor memory device

SAMSUNG ELECTRONICS CO LTD13 citations84
US7384843B2Jun 10, 2008

Method of fabricating flash memory device including control gate extensions

SAMSUNG ELECTRONICS CO LTD12 citations84
US7183600B2Feb 27, 2007

Semiconductor device with trench gate type transistor and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD11 citations83
US6562651B2May 13, 2003

Method of manufacturing a semiconductor device having contact pads

SAMSUNG ELECTRONICS CO LTD15 citations79
US7247540B2Jul 24, 2007

Methods of forming field effect transistors having recessed channel regions

SAMSUNG ELECTRONICS CO LTD7 citations74
US5772772AJun 30, 1998

Plasma diffusion control apparatus

SAMSUNG ELECTRONICS CO LTD8 citations74
US7303957B2Dec 4, 2007

Method of fabricating a flash memory device

SAMSUNG ELECTRONICS CO LTD7 citations73
US7291531B2Nov 6, 2007

Method of fabricating semiconductor device having capacitor

SAMSUNG ELECTRONICS CO LTD4 citations73
US7098135B2Aug 29, 2006

Semiconductor device including bit line formed using damascene technique and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD9 citations73
US7052952B2May 30, 2006

Method for forming wire line by damascene process using hard mask formed from contacts

SAMSUNG ELECTRONICS CO LTD7 citations72
US6159811ADec 12, 2000

Methods for patterning microelectronic structures using chlorine, oxygen, and fluorine

SAMSUNG ELECTRONICS CO LTD14 citations72
US5932492AAug 3, 1999

Methods for forming alumina masking

SAMSUNG ELECTRONICS CO LTD16 citations71
US7709389B2May 4, 2010

Method of fabricating a semiconductor device

SAMSUNG ELECTRONICS CO LTD5 citations63
US7510934B2Mar 31, 2009

Methods of fabricating nonvolatile memory devices

SAMSUNG ELECTRONICS CO LTD2 citations63
US7338849B2Mar 4, 2008

Methods of fabricating flash memory devices and flash memory devices fabricated thereby

SAMSUNG ELECTRONICS CO LTD2 citations63
US7242054B2Jul 10, 2007

Nonvolatile memory devices

SAMSUNG ELECTRONICS CO LTD3 citations63
US7125766B2Oct 24, 2006

Method of forming capacitor for semiconductor device

SAMSUNG ELECTRONICS CO LTD4 citations63
US6498081B2Dec 24, 2002

Method of manufacturing self-aligned contact hole

SAMSUNG ELECTRONICS CO LTD2 citations63
US7763544B2Jul 27, 2010

Method of forming fine pattern of semiconductor device using sige layer as sacrificial layer, and method of forming self-aligned contacts using the same

SAMSUNG ELECTRONICS CO LTD5 citations62
US7566659B2Jul 28, 2009

Method of forming fine pattern of semiconductor device using SiGe layer as sacrificial layer, and method of forming self-aligned contacts using the same

SAMSUNG ELECTRONICS CO LTD2 citations62
US7258811B2Aug 21, 2007

Wafer stage including electrostatic chuck and method for dechucking wafer using the wafer stage

SAMSUNG ELECTRONICS CO LTD3 citations62
US6855597B2Feb 15, 2005

DRAM cell

SAMSUNG ELECTRONICS CO LTD4 citations62
US6570205B2May 27, 2003

DRAM cell

SAMSUNG ELECTRONICS CO LTD5 citations62
US5914276AJun 22, 1999

Methods of forming electrically conductive lines using nitrogen and chlorine containing gas mixtures

SAMSUNG ELECTRONICS CO LTD5 citations62
US7118926B2Oct 10, 2006

Method of optimizing seasoning recipe for etch process

SAMSUNG ELECTRONICS CO LTD4 citations61
US6087264AJul 11, 2000

Methods for patterning microelectronic structures using chlorine and oxygen

SAMSUNG ELECTRONICS CO LTD6 citations61
US7709346B2May 4, 2010

Semiconductor device with trench gate type transistor and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations59
US7479445B2Jan 20, 2009

Methods of forming field effect transistors having t-shaped gate electrodes using carbon-based etching masks

SAMSUNG ELECTRONICS CO LTD0 citations52
US7329574B2Feb 12, 2008

Methods of forming capacitor electrodes using fluorine and oxygen

SAMSUNG ELECTRONICS CO LTD0 citations52
US7256143B2Aug 14, 2007

Semiconductor device having self-aligned contact plug and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US5863841AJan 26, 1999

Plasma diffusion control apparatus

SAMSUNG ELECTRONICS CO LTD1 citations52
US5808733ASep 15, 1998

Device for measuring feeble light and method thereof

SAMSUNG ELECTRONICS CO LTD1 citations52
US7736970B2Jun 15, 2010

Method of fabricating semiconductor device having capacitor

SAMSUNG ELECTRONICS CO LTD0 citations51
US7491344B2Feb 17, 2009

Method for etching an object using a plasma and an object etched by a plasma

SAMSUNG ELECTRONICS CO LTD1 citations51

CHI KYEONG-KOO

3 patents

LAM RES CORP

2 patents

CHO SUNG-IL

1 patent

SAMSUNG ELECTRONICS COL LTD

1 patent

Showing the top 50 of 52 patents by PatentIndex Score.