Inventor
CHUNG SEUNG-PIL
KR31 patents
⚠️ This page may combine multiple inventors who share the name “CHUNG SEUNG-PIL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
26 patentsUS6767834B2Jul 27, 2004
Method of manufacturing a contact of a semiconductor device using cluster apparatus having at least one plasma pretreatment module
SAMSUNG ELECTRONICS CO LTD198 citations98
US7488688B2Feb 10, 2009
Method of removing oxide layer and semiconductor manufacturing apparatus for removing oxide layer
SAMSUNG ELECTRONICS CO LTD250 citations97
US6513538B2Feb 4, 2003
Method of removing contaminants from integrated circuit substrates using cleaning solutions
SAMSUNG ELECTRONICS CO LTD95 citations96
US9865540B2Jan 9, 2018
Vertical memory devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD26 citations93
US7540970B2Jun 2, 2009
Methods of fabricating a semiconductor device
SAMSUNG ELECTRONICS CO LTD27 citations92
US6793767B2Sep 21, 2004
Wafer stage including electrostatic chuck and method for dechucking wafer using the wafer stage
SAMSUNG ELECTRONICS CO LTD26 citations92
US6534921B1Mar 18, 2003
Method for removing residual metal-containing polymer material and ion implanted photoresist in atmospheric downstream plasma jet system
SAMSUNG ELECTRONICS CO LTD45 citations92
US9978756B2May 22, 2018
Semiconductor chips and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD9 citations84
US7402488B2Jul 22, 2008
Method of manufacturing a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD13 citations84
US7384843B2Jun 10, 2008
Method of fabricating flash memory device including control gate extensions
SAMSUNG ELECTRONICS CO LTD12 citations84
US6537876B2Mar 25, 2003
Method of manufacturing a semiconductor capacitor having a hemispherical grain layer using a dry cleaning process
SAMSUNG ELECTRONICS CO LTD15 citations82
US7560386B2Jul 14, 2009
Method of manufacturing nonvolatile semiconductor memory device
SAMSUNG ELECTRONICS CO LTD12 citations80
US6562651B2May 13, 2003
Method of manufacturing a semiconductor device having contact pads
SAMSUNG ELECTRONICS CO LTD15 citations79
US10319864B2Jun 11, 2019
Vertical memory device
SAMSUNG ELECTRONICS CO LTD3 citations73
US7303957B2Dec 4, 2007
Method of fabricating a flash memory device
SAMSUNG ELECTRONICS CO LTD7 citations73
US7098135B2Aug 29, 2006
Semiconductor device including bit line formed using damascene technique and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD9 citations73
US9502427B2Nov 22, 2016
Non-volatile memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD5 citations70
US10749042B2Aug 18, 2020
Vertical memory device
SAMSUNG ELECTRONICS CO LTD3 citations69
US7510934B2Mar 31, 2009
Methods of fabricating nonvolatile memory devices
SAMSUNG ELECTRONICS CO LTD2 citations63
US7242054B2Jul 10, 2007
Nonvolatile memory devices
SAMSUNG ELECTRONICS CO LTD3 citations63
US7897512B2Mar 1, 2011
Methods of forming integrated circuit devices including a multi-layer structure with a contact extending therethrough
SAMSUNG ELECTRONICS CO LTD5 citations62
US7258811B2Aug 21, 2007
Wafer stage including electrostatic chuck and method for dechucking wafer using the wafer stage
SAMSUNG ELECTRONICS CO LTD3 citations62
US7585718B2Sep 8, 2009
Method of manufacturing a carbon nano-tube transistor
SAMSUNG ELECTRONICS CO LTD2 citations61
US7776644B2Aug 17, 2010
Phase change memory cell and method and system for forming the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US9806204B2Oct 31, 2017
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations50
US8361904B2Jan 29, 2013
Semiconductor device having fine pattern wiring lines integrally formed with contact plug and method of manufacturing same
SAMSUNG ELECTRONICS CO LTD0 citations42