Inventor
SHIN KANG SUP
KR17 patents
⚠️ This page may combine multiple inventors who share the name “SHIN KANG SUP”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MAGNACHIP SEMICONDUCTOR LTD
7 patentsUS10529797B2Jan 7, 2020
Semiconductor device having a deep-trench capacitor including void and fabricating method thereof
MAGNACHIP SEMICONDUCTOR LTD3 citations71
US9419206B2Aug 16, 2016
Magnetic sensor and method of fabricating the same
MAGNACHIP SEMICONDUCTOR LTD2 citations61
US10700265B2Jun 30, 2020
Semiconductor device having circuitry positioned above a buried magnetic sensor
MAGNACHIP SEMICONDUCTOR LTD0 citations51
US10256396B2Apr 9, 2019
Magnetic sensor and method of fabricating the same
MAGNACHIP SEMICONDUCTOR LTD0 citations51
US10003013B2Jun 19, 2018
Semiconductor device having circuitry positioned above a buried magnetic sensor
MAGNACHIP SEMICONDUCTOR LTD0 citations51
US9558992B2Jan 31, 2017
Metal wiring of semiconductor device and method for manufacturing the same
MAGNACHIP SEMICONDUCTOR LTD0 citations51
US9362207B2Jun 7, 2016
Metal wiring of semiconductor device and method for manufacturing the same
MAGNACHIP SEMICONDUCTOR LTD0 citations51
SK KEYFOUNDRY INC
4 patentsUS12183639B2Dec 31, 2024
Semiconductor device having deep trench structure and method of manufacturing thereof
SK KEYFOUNDRY INC0 citations61
US12489050B2Dec 2, 2025
Semiconductor device having high breakdown voltage capacitor
SK KEYFOUNDRY INC0 citations47
US12374614B2Jul 29, 2025
Semiconductor device and semiconductor device manufacturing method with high-voltage isolation capacitor
SK KEYFOUNDRY INC0 citations47
US12327692B2Jun 10, 2025
Semiconductor device having a high breakdown voltage capacitor and method for forming the same
SK KEYFOUNDRY INC0 citations44
KEY FOUNDRY CO LTD
3 patentsUS11018060B2May 25, 2021
Semiconductor device having deep trench structure and method of manufacturing thereof
KEY FOUNDRY CO LTD5 citations82
US11615989B2Mar 28, 2023
Semiconductor device having deep trench structure and method of manufacturing thereof
KEY FOUNDRY CO LTD2 citations71
US11367661B2Jun 21, 2022
Semiconductor device having deep trench structure and method of manufacturing thereof
KEY FOUNDRY CO LTD0 citations61