P

Inventor

KANG CHANG-JIN

KR40 patents
⚠️ This page may combine multiple inventors who share the name “KANG CHANG-JIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

35 patents
US7531449B2May 12, 2009

Method of forming fine patterns using double patterning process

SAMSUNG ELECTRONICS CO LTD29 citations92
US7381508B2Jun 3, 2008

Integrated circuit semiconductor device with overlay key and alignment key and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD16 citations92
US7319255B2Jan 15, 2008

Semiconductor device including a metal gate electrode formed in a trench and method of forming thereof

SAMSUNG ELECTRONICS CO LTD35 citations92
US6867096B2Mar 15, 2005

Method of fabricating semiconductor device having capacitor

SAMSUNG ELECTRONICS CO LTD16 citations92
US6607954B2Aug 19, 2003

Methods of fabricating cylinder-type capacitors for semiconductor devices using a hard mask and a mold layer

SAMSUNG ELECTRONICS CO LTD20 citations91
US6177320B1Jan 23, 2001

Method for forming a self aligned contact in a semiconductor device

SAMSUNG ELECTRONICS CO LTD50 citations91
US6169009B1Jan 2, 2001

Methods of etching platinum group metal film and forming lower electrode of capacitor

SAMSUNG ELECTRONICS CO LTD25 citations91
US7564094B2Jul 21, 2009

Non-volatile memory devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD15 citations84
US7402488B2Jul 22, 2008

Method of manufacturing a semiconductor memory device

SAMSUNG ELECTRONICS CO LTD13 citations84
US7384843B2Jun 10, 2008

Method of fabricating flash memory device including control gate extensions

SAMSUNG ELECTRONICS CO LTD12 citations84
US7183600B2Feb 27, 2007

Semiconductor device with trench gate type transistor and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD11 citations83
US7303957B2Dec 4, 2007

Method of fabricating a flash memory device

SAMSUNG ELECTRONICS CO LTD7 citations73
US7291531B2Nov 6, 2007

Method of fabricating semiconductor device having capacitor

SAMSUNG ELECTRONICS CO LTD4 citations73
US7226867B2Jun 5, 2007

Method of etching a metal layer using a mask, a metallization method for a semiconductor device, a method of etching a metal layer, and an etching gas

SAMSUNG ELECTRONICS CO LTD7 citations73
US7098135B2Aug 29, 2006

Semiconductor device including bit line formed using damascene technique and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD9 citations73
US7001817B2Feb 21, 2006

Method for fabricating a semiconductor device

SAMSUNG ELECTRONICS CO LTD7 citations73
US6753221B2Jun 22, 2004

Methods for fabricating semiconductor devices having capacitors

SAMSUNG ELECTRONICS CO LTD7 citations73
US7052952B2May 30, 2006

Method for forming wire line by damascene process using hard mask formed from contacts

SAMSUNG ELECTRONICS CO LTD7 citations72
US7312130B2Dec 25, 2007

Methods of forming capacitor structures including L-shaped cavities

SAMSUNG ELECTRONICS CO LTD9 citations71
US7803517B2Sep 28, 2010

Method of forming fine contact hole and method of fabricating semiconductor device using block copolymers

SAMSUNG ELECTRONICS CO LTD2 citations63
US7709389B2May 4, 2010

Method of fabricating a semiconductor device

SAMSUNG ELECTRONICS CO LTD5 citations63
US7338849B2Mar 4, 2008

Methods of fabricating flash memory devices and flash memory devices fabricated thereby

SAMSUNG ELECTRONICS CO LTD2 citations63
US7125766B2Oct 24, 2006

Method of forming capacitor for semiconductor device

SAMSUNG ELECTRONICS CO LTD4 citations63
US7763544B2Jul 27, 2010

Method of forming fine pattern of semiconductor device using sige layer as sacrificial layer, and method of forming self-aligned contacts using the same

SAMSUNG ELECTRONICS CO LTD5 citations62
US7566659B2Jul 28, 2009

Method of forming fine pattern of semiconductor device using SiGe layer as sacrificial layer, and method of forming self-aligned contacts using the same

SAMSUNG ELECTRONICS CO LTD2 citations62
US7118926B2Oct 10, 2006

Method of optimizing seasoning recipe for etch process

SAMSUNG ELECTRONICS CO LTD4 citations61
US6143654ANov 7, 2000

Method of forming tungsten pattern for a semiconductor device

SAMSUNG ELECTRONICS CO LTD3 citations60
US7709346B2May 4, 2010

Semiconductor device with trench gate type transistor and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations59
US7479445B2Jan 20, 2009

Methods of forming field effect transistors having t-shaped gate electrodes using carbon-based etching masks

SAMSUNG ELECTRONICS CO LTD0 citations52
US7256143B2Aug 14, 2007

Semiconductor device having self-aligned contact plug and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US7736970B2Jun 15, 2010

Method of fabricating semiconductor device having capacitor

SAMSUNG ELECTRONICS CO LTD0 citations51
US7491344B2Feb 17, 2009

Method for etching an object using a plasma and an object etched by a plasma

SAMSUNG ELECTRONICS CO LTD1 citations51
US7842450B2Nov 30, 2010

Method of forming a semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations49
US7572736B2Aug 11, 2009

Method of dry-etching semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations41
US7282407B1Oct 16, 2007

Semiconductor memory device and method of manufacturing for preventing bit line oxidation

SAMSUNG ELECTRONICS CO LTD0 citations40

KIM DONG-HYUN

1 patent

SAMSUNG ELECTROIC CO LTD

1 patent

CHO SUNG-IL

1 patent

SAMSUNG ELECTRONICS COL LTD

1 patent

KANG CHANG-JIN

1 patent