Inventor

MIGNOT YANN

US106 patents

⚠️ This page may combine multiple inventors who share the name “MIGNOT YANN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MIGNOT YANN

IBM

Inverse tone direct print EUV lithography enabled by selective material deposition

Integration of super via structure in BEOL

Integration of super via structure in BEOL

Self aligned via in integrated circuit

Self-aligned double patterning formed fincut

EUV pattern transfer with ion implantation and reduced impact of resist residue

Method of forming a straight via profile with precise critical dimension control

Structure and method using metal spacer for insertion of variable wide line implantation in SADP/SAQP integration

Method for residue-free block pattern transfer onto metal interconnects for air gap formation

Self aligned via in integrated circuit

Back-end-of-line single damascene top via spacer defined by pillar mandrels

Non volatile resistive memory logic device

Barrier-free vertical interconnect structure

Tall trenches for via chamferless and self forming barrier

Metallization interconnect structure formation

Svia using a single damascene interconnect

Multiple patterning scheme integration with planarized cut patterning

Metal spacer self aligned multi-patterning integration

Method of forming a straight via profile with precise critical dimension control

Stack viabar structures

Controlling via critical dimension during fabrication of a semiconductor wafer

Techniques for vertical FET gate length control

Methods and structures for forming uniform fins when using hardmask patterns

Method for top oxide rounding with protection of patterned features

Wrap-around projection liner for AI device

SiARC removal with plasma etch and fluorinated wet chemical solution combination

Litho-etch-litho-etch with self-aligned blocks

Metal via structure

Semiconductor device with linerless contacts

Forming line end vias

Metal hard mask for precise tuning of mandrels

MRAM top electrode structure with liner layer

Subtractive metal etch with improved isolation for BEOL interconnect and cross point

Sacrificial fin for self-aligned contact rail formation

Line formation with cut-first tip definition

Sacrificial fin for contact self-alignment

Sacrificial fin for contact self-alignment

Multiple patterning scheme integration with planarized cut patterning

Double metal double patterning with vias extending into dielectric

Double metal patterning

EUV pattern transfer with ion implantation and reduced impact of resist residue

Fin cut profile using fin base liner

Stack viabar structures

Extreme ultraviolet lithography patterning with directional deposition

ST MICROELECTRONICS INC

Co-integration of tensile silicon and compressive silicon germanium

Interconnect structure for an integrated circuit and method of fabricating an interconnect structure

Co-integration of tensile silicon and compressive silicon germanium

Trench interconnect having reduced fringe capacitance

Co-integration of tensile silicon and compressive silicon germanium

GLOBALFOUNDRIES INC

Inverted damascene interconnect structures