P

Inventor

LI ZILAN

CN19 patents
⚠️ This page may combine multiple inventors who share the name “LI ZILAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GUANGDONG ZHINENG TECH CO LTD

16 patents
US12040356B2Jul 16, 2024

Fin-shaped semiconductor device, fabrication method, and application thereof

GUANGDONG ZHINENG TECH CO LTD2 citations71
US11830940B2Nov 28, 2023

Semiconductor device including high electron mobility transistor or high hole mobility transistor and method of fabricating the same

GUANGDONG ZHINENG TECH CO LTD2 citations71
US12100759B2Sep 24, 2024

Semiconductor device, manufacturing method and electronic equipment

GUANGDONG ZHINENG TECH CO LTD2 citations69
US12538514B2Jan 27, 2026

Semiconductor apparatus and method for fabricating same

GUANGDONG ZHINENG TECH CO LTD0 citations61
US12432958B2Sep 30, 2025

Device formed by epitaxial growth from the side surface of a step

GUANGDONG ZHINENG TECH CO LTD0 citations61
US12302598B2May 13, 2025

Semiconductor device and method of manufacturing the same

GUANGDONG ZHINENG TECH CO LTD0 citations61
US12136669B2Nov 5, 2024

High hole mobility transistor (HHMT) and method of manufacturing the same

GUANGDONG ZHINENG TECH CO LTD0 citations61
US11527641B2Dec 13, 2022

High-electron-mobility transistor with high voltage endurance capability and preparation method thereof

GUANGDONG ZHINENG TECH CO LTD0 citations61
US11152498B2Oct 19, 2021

Semiconductor device and method of manufacturing the same

GUANGDONG ZHINENG TECH CO LTD0 citations61
US12574001B2Mar 10, 2026

Bulk filter

GUANGDONG ZHINENG TECH CO LTD0 citations51
US12464756B2Nov 4, 2025

High electron mobility transistor (HEMT) and method of manufacturing the same

GUANGDONG ZHINENG TECH CO LTD0 citations50
US12376324B2Jul 29, 2025

Non-planar two-dimensional electron gas (2DEG) or two-dimensional hole gas (2DHG) including epitaxially growing an n-type buried layer between first channel and second channel and a method of forming the same

GUANGDONG ZHINENG TECH CO LTD0 citations50
US12349387B2Jul 1, 2025

Semiconductor device that comprises an HEMT and an HHMT with a backside contact electrode and the manufacturing method thereof

GUANGDONG ZHINENG TECH CO LTD0 citations50
US12274084B2Apr 8, 2025

Normally-closed device and fabrication method thereof

GUANGDONG ZHINENG TECH CO LTD0 citations50
US12148822B2Nov 19, 2024

Integrated circuit structure of group III nitride semiconductor, manufacturing method thereof, and use thereof

GUANGDONG ZHINENG TECH CO LTD0 citations50
US11870434B2Jan 9, 2024

Driving circuit, driving IC, and driving system

GUANGDONG ZHINENG TECH CO LTD0 citations47

LI ZILAN

3 patents