Inventor

KANAKAMEDALA SENAKA

US60 patents

⚠️ This page may combine multiple inventors who share the name “KANAKAMEDALA SENAKA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KANAKAMEDALA SENAKA

SANDISK TECHNOLOGIES LLC

Three-dimensional memory device with silicided word lines, air gap layers and discrete charge storage elements, and method of making thereof

Three-dimensional memory device containing a lateral source contact and method of making the same

Reusable support substrate for formation and transfer of semiconductor devices and methods of using the same

Three-dimensional memory device having drain select level isolation structure and method of making thereof

Cobalt-containing conductive layers for control gate electrodes in a memory structure

Vertical floating gate NAND with selectively deposited ALD metal films

Three-dimensional memory device including an inter-tier etch stop layer and method of making the same

Three-dimensional memory device including molybdenum word lines and metal oxide spacers and method of making the same

Bonded assembly containing metal-organic framework bonding dielectric and methods of forming the same

Three-dimensional memory device including contact via structures that extend through word lines and method of making the same

Semiconductor structure containing reentrant shaped bonding pads and methods of forming the same

Warpage-compensated bonded structure including a support chip and a three-dimensional memory chip

Warpage-compensated bonded structure including a support chip and a three-dimensional memory chip

Three-dimensional memory device containing channels with laterally pegged dielectric cores

Three-dimensional memory device with semicircular metal-semiconductor alloy floating gate electrodes and methods of making thereof

Three-dimensional memory array including dual work function floating gates and method of making the same

Multilevel memory stack structure with tapered inter-tier joint region and methods of making thereof

Bonded assembly containing oxidation barriers, hybrid bonding, or air gap, and methods of forming the same

Three-dimensional memory device including multi-bit charge storage elements and methods for forming the same

Three-dimensional memory device employing thinned insulating layers and methods for forming the same

Three-dimensional memory device including discrete charge storage elements and methods of forming the same

Semiconductor structure containing reentrant shaped bonding pads and methods of forming the same

Ridged word lines for increasing control gate lengths in a three-dimensional memory device

Three-dimensional memory device containing vertically isolated charge storage regions and method of making thereof

Three-dimensional memory device containing ferroelectric-assisted memory elements and method of making the same

Three-dimensional memory devices having channel cap structures and methods for forming the same

Three-dimensional memory device employing thinned insulating layers and methods for forming the same

Three-dimensional memory device including discrete charge storage elements and methods of forming the same

Damascene process for forming three-dimensional cross rail phase change memory devices

Three dimensional semiconductor device containing composite contact via structures and methods of making the same

Semiconductor device including having metal organic framework interlayer dielectric layer between metal lines and methods of forming the same

Three-dimensional memory device containing metal-organic framework inter-word line insulating layers

Three-dimensional memory device and method of making thereof by non-conformal selective deposition of insulating spacers in a memory opening

Method of making a three-dimensional memory device using composite hard masks for formation of deep via openings

Method of making a three-dimensional memory device using composite hard masks for formation of deep via openings

Multibit ferroelectric memory cells and methods for forming the same

Three-dimensional memory device and method of making thereof using etch stop structures located between tiers

Three-dimensional memory device and method of making thereof using sacrificial material regrowth

Three-dimensional memory device including an isolation-trench etch stop layer and methods for forming the same

Memory device including mixed oxide charge trapping materials and methods for forming the same

Method of making a three-dimensional memory device using composite hard masks for formation of deep via openings

Three-dimensional memory device including discrete charge storage elements with laterally-protruding profiles and methods of making thereof

SANDISK TECHNOLOGIES INC

Crystalinity-dependent aluminum oxide etching for self-aligned blocking dielectric in a memory structure

Three-dimensional memory device with metal and silicide control gates

Semiconductor structure with concave blocking dielectric sidewall and method of making thereof by isotropically etching the blocking dielectric layer

Vertical floating gate NAND with selectively deposited ALD metal films

Method of making a three dimensional NAND device

Three dimensional NAND device and method of making thereof

NAND memory strings and methods of fabrication thereof

WESTERN DIGITAL TECH INC

Method of making high aspect ratio openings in a semiconductor device using ion implanted regrown cladding mask