Inventor
GAO YANDONG
US8 patents
Patents
8 patentsUS11500960B2Nov 15, 2022
Memory cell for dot product operation in compute-in-memory chip
QUALCOMM INC2 citations72
US10964380B1Mar 30, 2021
Integrated device comprising memory bitcells comprising shared preload line and shared activation line
QUALCOMM INC3 citations72
US10964356B2Mar 30, 2021
Compute-in-memory bit cell
QUALCOMM INC4 citations72
US11469239B1Oct 11, 2022
Static random-access memory (SRAM) array circuits including bilateral well tap cells with reduced width folded finger structure
QUALCOMM INC4 citations67
US11581037B2Feb 14, 2023
Digital compute-in-memory (DCIM) bit cell circuit layouts and DCIM arrays for multiple operations per column
QUALCOMM INC0 citations51
US11361817B2Jun 14, 2022
Pseudo-triple-port SRAM bitcell architecture
QUALCOMM INC0 citations50
US11424250B2Aug 23, 2022
Memory
QUALCOMM INC0 citations41
US10438654B2Oct 8, 2019
Transpose static random access memory (SRAM) bit cells configured for horizontal and vertical read operations
QUALCOMM INC0 citations40