Inventor

MORIN PIERRE

BE96 patents

⚠️ This page may combine multiple inventors who share the name “MORIN PIERRE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MORIN PIERRE

ST MICROELECTRONICS INC

Method to induce strain in 3-D microfabricated structures

Method to induce strain in finFET channels from an adjacent region

Semiconductor device with fin and related methods

Method to induce strain in 3-D microfabricated structures

Semiconductor device with fin and related methods

Method to induce strain in finFET channels from an adjacent region

Semiconductor device with fin and related methods

Co-integration of tensile silicon and compressive silicon germanium

Integrated tensile strained silicon NFET and compressive strained silicon-germanium PFET implemented in FINFET technology

Method of using a sacrificial gate structure to make a metal gate FinFET transistor

Semiconductor device with fin and related methods

Method to induce strain in finFET channels from an adjacent region

Uniaxially-strained FD-SOI finFET

Method to induce strain in 3-D microfabricated structures

Method to form strained channel in thin box SOI structures by elastic strain relaxation of the substrate

Method to induce strain in finFET channels from an adjacent region

FinFET with multiple concentration percentages

Method to induce strain in finFET channels from an adjacent region

Method to induce strain in 3-D microfabricated structures

Method to form strained channel in thin box SOI structures by elastic strain relaxation of the substrate

Co-integration of tensile silicon and compressive silicon germanium

Semiconductor integrated structure having an epitaxial SiGe layer extending from silicon-containing regions formed between segments of oxide regions

Method to induce strain in 3-D microfabricated structures

Method to form localized relaxed substrate by using condensation

Method of making a semiconductor device using spacers for source/drain confinement

Method to enhance strain in fully isolated finFET structures

INST FRANCAIS DU PETROLE

Device for remotely actuating equipment comprising a bean-needle system

Method and device for transmitting data by cable and mud waves

Method and device for remote-controlling drill string equipment by a sequence of information

Fitting for controlled trajectory drilling, comprising a variable geometry stabilizer and use of this fitting

Equipment for a drilling fitting comprising an element to be actuated, a motor and control means

Rotary drilling device comprising means for adjusting the azimuth angle of the path of the drilling tool and corresponding drilling process

Extensometric sensor for measuring the stresses acting on a drilling element and a device for mounting such a sensor

Assembly providing an electrical connection through a pipe formed of several elements

Fitting for controlled trajectory drilling, comprising a variable angle elbow element and use of this fitting

Method and device for detecting a fluid flow rate

Assembly for forming an electric connection through a pipe formed of several elements

GLOBALFOUNDRIES INC

Method for single fin cuts using selective ion implants

Early PTS with buffer for channel doping control

COMMISSARIAT ENERGIE ATOMIQUE

Method for fabricating a device with a tensile-strained NMOS transistor and a uniaxial compression strained PMOS transistor

Enhanced method of introducing a stress in a transistor channel by means of sacrificial sources/drain regions and gate replacement

SMF INT

Device for the remote adjustment of the relative orientation of two sections of a column

USM CORP

Automatic sewing machine

LEROY SOMER MOTEURS

Device for providing fluid-tightness of a submersible motor and a motor incorporating said device

ST MICROELECTRONICS SA

Semiconductor device with MOS transistors with an etch-stop layer having an improved residual stress level and method for fabricating such a semiconductor device

INSTRUMENTS SA

Apparatus and method for local chemical analyses at the surface of solid materials by spectroscopy of X photoelectrons

ST MICROELECTRONICS CROLLES 2 SAS

Chip containing an onboard non-volatile memory comprising a phase-change material

BELL SEMICONDUCTOR LLC

Method to induce strain in finFET channels from an adjacent region

IBM

Semiconductor device including optimized elastic strain buffer

SOITEC SILICON ON INSULATOR

Method for fabricating a semiconductor device including fin relaxation, and related structures