Inventor

YANG TSUNG-HSUEH

TW22 patents

⚠️ This page may combine multiple inventors who share the name “YANG TSUNG-HSUEH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YANG TSUNG-HSUEH

TAIWAN SEMICONDUCTOR MFG CO LTD

Self-aligned split gate flash memory

Top electrode cap structure for embedded memory

Capacitor structure and method of manufacturing the same

Split gate memory device for improved erase speed

Sidewall spacer structure for memory cell

Sidewall spacer structure for memory cell

Sidewall protection of memory cell

Memory device having via landing protection

Sidewall spacer structure for memory cell

Semiconductor devices and methods of manufacturing

Semiconductor devices and methods of manufacturing

Memory device having via landing protection

In-situ formation of a spacer layer for protecting sidewalls of a phase change memory element and methods for forming the same

Method of manufacturing capacitor structure

Top electrode cap structure for embedded memory

Top electrode cap structure for embedded memory

Method to control the common drain of a pair of control gates and to improve inter-layer dielectric (ILD) filling between the control gates

Method for forming semiconductor device structure

Semiconductor device structure and method for forming the same

Method to control the common drain of a pair of control gates and to improve inter-layer dielectric (ILD) filling between the control gates

Encapsulated phase change material switch and methods for forming the same

TAIWAN SEMICONDUCTOR MFG

Method of fabricating MONOS semiconductor device