Inventor
TSUJI TAKAHARU
JP37 patents
⚠️ This page may combine multiple inventors who share the name “TSUJI TAKAHARU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
17 patentsUS6597617B2Jul 22, 2003
Semiconductor device with reduced current consumption in standby state
MITSUBISHI ELECTRIC CORP83 citations98
US6414894B2Jul 2, 2002
Semiconductor device with reduced current consumption in standby state
MITSUBISHI ELECTRIC CORP66 citations96
US6384674B2May 7, 2002
Semiconductor device having hierarchical power supply line structure improved in operating speed
MITSUBISHI ELECTRIC CORP73 citations96
US5917766AJun 29, 1999
Semiconductor memory device that can carry out read disturb testing and burn-in testing reliably
MITSUBISHI ELECTRIC CORP58 citations96
US6618317B1Sep 9, 2003
Write system architecture of magnetic memory array divided into a plurality of memory blocks
MITSUBISHI ELECTRIC CORP22 citations93
US6373315B2Apr 16, 2002
Signal potential conversion circuit
MITSUBISHI ELECTRIC CORP42 citations93
US6597621B2Jul 22, 2003
Multi-bank semiconductor memory device
MITSUBISHI ELECTRIC CORP28 citations92
US6411560B1Jun 25, 2002
Semiconductor memory device capable of reducing leakage current flowing into substrate
MITSUBISHI ELECTRIC CORP48 citations92
US6118710ASep 12, 2000
Semiconductor memory device including disturb refresh test circuit
MITSUBISHI ELECTRIC CORP31 citations92
US5716889AFeb 10, 1998
Method of arranging alignment marks
MITSUBISHI ELECTRIC CORP40 citations92
US6584022B2Jun 24, 2003
Semiconductor memory device with simultaneous data line selection and shift redundancy selection
MITSUBISHI ELECTRIC CORP16 citations84
US6058053AMay 2, 2000
Semiconductor memory device capable of high speed operation and including redundant cells
MITSUBISHI ELECTRIC CORP19 citations84
US5812492ASep 22, 1998
Control signal generation circuit and semiconductor memory device that can correspond to high speed external clock signal
MITSUBISHI ELECTRIC CORP19 citations84
US5744998AApr 28, 1998
Internal voltage detecting circuit having superior responsibility
MITSUBISHI ELECTRIC CORP19 citations84
US6005294ADec 21, 1999
Method of arranging alignment marks
MITSUBISHI ELECTRIC CORP15 citations74
US6466509B1Oct 15, 2002
Semiconductor memory device having a column select line transmitting a column select signal
MITSUBISHI ELECTRIC CORP12 citations73
US6411563B1Jun 25, 2002
Semiconductor integrated circuit device provided with a logic circuit and a memory circuit and being capable of efficient interface between the same
MITSUBISHI ELECTRIC CORP3 citations63
RENESAS TECH CORP
14 patentsUS7436699B2Oct 14, 2008
Nonvolatile semiconductor memory device
RENESAS TECH CORP78 citations98
US6898113B2May 24, 2005
Magnetic memory device with reference cell for data reading
RENESAS TECH CORP30 citations92
US6778434B2Aug 17, 2004
Magnetic random access memory device with a reduced number of interconnections for selection of address
RENESAS TECH CORP26 citations92
US6856537B2Feb 15, 2005
Thin film magnetic memory device having dummy cell
RENESAS TECH CORP16 citations84
US6791876B2Sep 14, 2004
Thin-film magnetic memory device suppressing parasitic capacitance applied to data line or the like
RENESAS TECH CORP17 citations84
US7272032B2Sep 18, 2007
Semiconductor integrated circuit device and magnetic memory device capable of maintaining data integrity
RENESAS TECH CORP6 citations74
US6868029B2Mar 15, 2005
Semiconductor device with reduced current consumption in standby state
RENESAS TECH CORP10 citations74
US7486547B2Feb 3, 2009
Semiconductor integrated circuit device and magnetic memory device capable of maintaining data integrity
RENESAS TECH CORP5 citations63
US7447057B2Nov 4, 2008
Semiconductor integrated circuit device with a plurality of memory cells storing data
RENESAS TECH CORP4 citations63
US6961883B2Nov 1, 2005
Tester built-in semiconductor integrated circuit device
RENESAS TECH CORP5 citations63
US6952372B2Oct 4, 2005
Semiconductor memory device capable of testing data line redundancy replacement circuit
RENESAS TECH CORP2 citations63
US6925029B2Aug 2, 2005
Thin film magnetic memory device for selectively supplying a desired data write current to a plurality of memory blocks
RENESAS TECH CORP3 citations63
US6747910B2Jun 8, 2004
Thin film magnetic memory device for selectively supplying a desired data write current to a plurality of memory blocks
RENESAS TECH CORP4 citations63
US6798702B2Sep 28, 2004
Semiconductor memory device capable of testing data line redundancy replacement circuit
RENESAS TECH CORP1 citations52