P

Inventor

TSUJI TAKAHARU

JP37 patents
⚠️ This page may combine multiple inventors who share the name “TSUJI TAKAHARU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MITSUBISHI ELECTRIC CORP

17 patents
US6597617B2Jul 22, 2003

Semiconductor device with reduced current consumption in standby state

MITSUBISHI ELECTRIC CORP83 citations98
US6414894B2Jul 2, 2002

Semiconductor device with reduced current consumption in standby state

MITSUBISHI ELECTRIC CORP66 citations96
US6384674B2May 7, 2002

Semiconductor device having hierarchical power supply line structure improved in operating speed

MITSUBISHI ELECTRIC CORP73 citations96
US5917766AJun 29, 1999

Semiconductor memory device that can carry out read disturb testing and burn-in testing reliably

MITSUBISHI ELECTRIC CORP58 citations96
US6618317B1Sep 9, 2003

Write system architecture of magnetic memory array divided into a plurality of memory blocks

MITSUBISHI ELECTRIC CORP22 citations93
US6373315B2Apr 16, 2002

Signal potential conversion circuit

MITSUBISHI ELECTRIC CORP42 citations93
US6597621B2Jul 22, 2003

Multi-bank semiconductor memory device

MITSUBISHI ELECTRIC CORP28 citations92
US6411560B1Jun 25, 2002

Semiconductor memory device capable of reducing leakage current flowing into substrate

MITSUBISHI ELECTRIC CORP48 citations92
US6118710ASep 12, 2000

Semiconductor memory device including disturb refresh test circuit

MITSUBISHI ELECTRIC CORP31 citations92
US5716889AFeb 10, 1998

Method of arranging alignment marks

MITSUBISHI ELECTRIC CORP40 citations92
US6584022B2Jun 24, 2003

Semiconductor memory device with simultaneous data line selection and shift redundancy selection

MITSUBISHI ELECTRIC CORP16 citations84
US6058053AMay 2, 2000

Semiconductor memory device capable of high speed operation and including redundant cells

MITSUBISHI ELECTRIC CORP19 citations84
US5812492ASep 22, 1998

Control signal generation circuit and semiconductor memory device that can correspond to high speed external clock signal

MITSUBISHI ELECTRIC CORP19 citations84
US5744998AApr 28, 1998

Internal voltage detecting circuit having superior responsibility

MITSUBISHI ELECTRIC CORP19 citations84
US6005294ADec 21, 1999

Method of arranging alignment marks

MITSUBISHI ELECTRIC CORP15 citations74
US6466509B1Oct 15, 2002

Semiconductor memory device having a column select line transmitting a column select signal

MITSUBISHI ELECTRIC CORP12 citations73
US6411563B1Jun 25, 2002

Semiconductor integrated circuit device provided with a logic circuit and a memory circuit and being capable of efficient interface between the same

MITSUBISHI ELECTRIC CORP3 citations63

RENESAS TECH CORP

14 patents
US7436699B2Oct 14, 2008

Nonvolatile semiconductor memory device

RENESAS TECH CORP78 citations98
US6898113B2May 24, 2005

Magnetic memory device with reference cell for data reading

RENESAS TECH CORP30 citations92
US6778434B2Aug 17, 2004

Magnetic random access memory device with a reduced number of interconnections for selection of address

RENESAS TECH CORP26 citations92
US6856537B2Feb 15, 2005

Thin film magnetic memory device having dummy cell

RENESAS TECH CORP16 citations84
US6791876B2Sep 14, 2004

Thin-film magnetic memory device suppressing parasitic capacitance applied to data line or the like

RENESAS TECH CORP17 citations84
US7272032B2Sep 18, 2007

Semiconductor integrated circuit device and magnetic memory device capable of maintaining data integrity

RENESAS TECH CORP6 citations74
US6868029B2Mar 15, 2005

Semiconductor device with reduced current consumption in standby state

RENESAS TECH CORP10 citations74
US7486547B2Feb 3, 2009

Semiconductor integrated circuit device and magnetic memory device capable of maintaining data integrity

RENESAS TECH CORP5 citations63
US7447057B2Nov 4, 2008

Semiconductor integrated circuit device with a plurality of memory cells storing data

RENESAS TECH CORP4 citations63
US6961883B2Nov 1, 2005

Tester built-in semiconductor integrated circuit device

RENESAS TECH CORP5 citations63
US6952372B2Oct 4, 2005

Semiconductor memory device capable of testing data line redundancy replacement circuit

RENESAS TECH CORP2 citations63
US6925029B2Aug 2, 2005

Thin film magnetic memory device for selectively supplying a desired data write current to a plurality of memory blocks

RENESAS TECH CORP3 citations63
US6747910B2Jun 8, 2004

Thin film magnetic memory device for selectively supplying a desired data write current to a plurality of memory blocks

RENESAS TECH CORP4 citations63
US6798702B2Sep 28, 2004

Semiconductor memory device capable of testing data line redundancy replacement circuit

RENESAS TECH CORP1 citations52

MITSUBISHI ELECTRIC ENG

2 patents

TANIZAKI HIROAKI

2 patents

MITISUBISHI DENKI KABUSHIKI KA

1 patent

TSUJI TAKAHARU

1 patent