Inventor
SAKAI SHIRO
JP58 patents
⚠️ This page may combine multiple inventors who share the name “SAKAI SHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAKAI SHIRO
16 patentsUS8129729B2Mar 6, 2012
Light emitting device having light emitting elements and an air bridge line
SAKAI SHIRO16 citations92
US8097889B2Jan 17, 2012
Light emitting device having light emitting elements with a shared electrode
SAKAI SHIRO10 citations92
US8084774B2Dec 27, 2011
Light emitting device having light emitting elements
SAKAI SHIRO8 citations92
US8735911B2May 27, 2014
Light emitting device having shared electrodes
SAKAI SHIRO5 citations84
US8680533B2Mar 25, 2014
Light-emitting device having light-emitting elements with a shared electrode
SAKAI SHIRO4 citations84
US6861270B2Mar 1, 2005
Method for manufacturing gallium nitride compound semiconductor and light emitting element
SAKAI SHIRO17 citations84
US4496598AJan 29, 1985
Process for preparing mustard flour
SAKAI SHIRO24 citations76
US6517885B2Feb 11, 2003
Process for preparation of mustard powder and mustard cake
SAKAI SHIRO7 citations74
US8735918B2May 27, 2014
Light-emitting device having light-emitting elements with polygonal shape
SAKAI SHIRO2 citations73
US9006084B2Apr 14, 2015
Method of preparing semiconductor layer including cavities
SAKAI SHIRO1 citations63
US8860183B2Oct 14, 2014
Semiconductor substrate, semiconductor device, and manufacturing methods thereof
SAKAI SHIRO1 citations63
US8624291B2Jan 7, 2014
Crystalline aluminum carbide thin film, semiconductor substrate having the aluminum carbide thin film formed thereon and method of fabricating the same
SAKAI SHIRO2 citations63
US8481411B2Jul 9, 2013
Method of manufacturing a semiconductor substrate having a cavity
SAKAI SHIRO1 citations63
US8294183B2Oct 23, 2012
Semiconductor substrate, method of fabricating the same, semiconductor device, and method of fabricating the same
SAKAI SHIRO3 citations63
US6610606B2Aug 26, 2003
Method for manufacturing nitride compound based semiconductor device using an RIE to clean a GaN-based layer
SAKAI SHIRO5 citations62
US9299779B2Mar 29, 2016
Semiconductor substrate and method of fabricating the same
SAKAI SHIRO1 citations52
SEOUL SEMICONDUCTOR CO LTD
8 patentsUS7417259B2Aug 26, 2008
Light-emitting device having light-emitting elements
SEOUL SEMICONDUCTOR CO LTD126 citations99
US7569861B2Aug 4, 2009
Light emitting device having light emitting elements
SEOUL SEMICONDUCTOR CO LTD20 citations96
US7956367B2Jun 7, 2011
Light-emitting device having light-emitting elements connected in series
SEOUL SEMICONDUCTOR CO LTD11 citations92
US7897982B2Mar 1, 2011
Light emitting device having common N-electrode
SEOUL SEMICONDUCTOR CO LTD9 citations92
US7667237B2Feb 23, 2010
Light emitting device having light emitting elements
SEOUL SEMICONDUCTOR CO LTD10 citations92
US7646031B2Jan 12, 2010
Light emitting device having light emitting elements
SEOUL SEMICONDUCTOR CO LTD15 citations92
US9947717B2Apr 17, 2018
Light-emitting device having light-emitting elements and electrode spaced apart from the light emitting element
SEOUL SEMICONDUCTOR CO LTD2 citations84
US7615793B2Nov 10, 2009
AC driven light—emitting device
SEOUL SEMICONDUCTOR CO LTD4 citations74
NITRIDE SEMICONDUCTORS CO LTD
5 patentsUS6475882B1Nov 5, 2002
Method for producing GaN-based compound semiconductor and GaN-based compound semiconductor device
NITRIDE SEMICONDUCTORS CO LTD51 citations96
US7372066B2May 13, 2008
Gallium nitride compound semiconductor device and manufacturing method
NITRIDE SEMICONDUCTORS CO LTD69 citations94
US7067838B1Jun 27, 2006
Gallium-nitride-based light-emitting apparatus
NITRIDE SEMICONDUCTORS CO LTD26 citations92
US6884647B2Apr 26, 2005
Method for roughening semiconductor surface
NITRIDE SEMICONDUCTORS CO LTD38 citations92
US7005685B2Feb 28, 2006
Gallium-nitride-based compound semiconductor device
NITRIDE SEMICONDUCTORS CO LTD14 citations79
DAIDO STEEL CO LTD
3 patentsUS4963508AOct 16, 1990
Method of making an epitaxial gallium arsenide semiconductor wafer using a strained layer superlattice
DAIDO STEEL CO LTD158 citations98
US4928154AMay 22, 1990
Epitaxial gallium arsenide semiconductor on silicon substrate with gallium phosphide and superlattice intermediate layers
DAIDO STEEL CO LTD74 citations95
US4789421ADec 6, 1988
Gallium arsenide superlattice crystal grown on silicon substrate and method of growing such crystal
DAIDO STEEL CO LTD7 citations70
SEOUL OPTO DEVICE CO LTD
3 patentsUS8026119B2Sep 27, 2011
Method of fabricating semiconductor substrate and method of fabricating light emitting device
SEOUL OPTO DEVICE CO LTD20 citations92
US8697551B2Apr 15, 2014
Crystalline aluminum carbide thin film, semiconductor substrate having the aluminum carbide thin film formed thereon and method of fabricating the same
SEOUL OPTO DEVICE CO LTD3 citations63
US8609449B2Dec 17, 2013
Method of fabricating semiconductor substrate and method of fabricating light emitting device
SEOUL OPTO DEVICE CO LTD2 citations62
SEOUL VIOSYS CO LTD
3 patentsUS10128403B2Nov 13, 2018
Semiconductor substrate, semiconductor device, and manufacturing methods thereof
SEOUL VIOSYS CO LTD0 citations52
US9773940B2Sep 26, 2017
Semiconductor substrate, semiconductor device, and manufacturing methods thereof
SEOUL VIOSYS CO LTD0 citations52
US9425347B2Aug 23, 2016
Semiconductor substrate, semiconductor device, and manufacturing methods thereof
SEOUL VIOSYS CO LTD0 citations52
JAPAN PIONICS
2 patentsHAMAMATSU PHOTONICS KK
2 patentsSUMITOMO CHEMICAL CO
2 patentsUS3969329AJul 13, 1976
Process for producing high molecular weight acrylamide water-soluble polymers by controlling the viscosity of the polymerization reaction medium with a water-miscible organic solvent
SUMITOMO CHEMICAL CO8 citations71
US3931122AJan 6, 1976
Method for producing high molecular weight polyacrylamide type resins
SUMITOMO CHEMICAL CO6 citations55
KIM CHANG YOUN
2 patentsSHARP KK
1 patentSHIRO SAKAI
1 patentNITRIDE SEMICONDUCTOR CO LTD
1 patentOSAKA GAS CO LTD
1 patentShowing the top 50 of 58 patents by PatentIndex Score.