P

Inventor

KAWAMURA MASAO

JP49 patents
⚠️ This page may combine multiple inventors who share the name “KAWAMURA MASAO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SEITETSU KAGAKU CO LTD

17 patents
US4569909AFeb 11, 1986

Process for preparing uridine diphosphate-N-acetylgalactosamine

SEITETSU KAGAKU CO LTD16 citations78
US4054499AOct 18, 1977

Process for producing 2-chloropyridine

SEITETSU KAGAKU CO LTD11 citations68
US5101049AMar 31, 1992

Novel thiophene derivatives and methods for producing the same

SEITETSU KAGAKU CO LTD2 citations62
US4792612ADec 20, 1988

Thiophene derivatives and methods for producing the same

SEITETSU KAGAKU CO LTD3 citations62
US4124646ANov 7, 1978

Process for producing thioanisole

SEITETSU KAGAKU CO LTD8 citations62
US4849138AJul 18, 1989

Method of producing alkali metal benzenesulfinates

SEITETSU KAGAKU CO LTD5 citations61
US4740578AApr 26, 1988

Process for producing polythiobisphenols and process for producing mercaptophenols by the hydrogenolysis of the same

SEITETSU KAGAKU CO LTD6 citations61
US4835317AMay 30, 1989

4-tert.-butyl-1,2-benzenedithiol, complex compounds derived therefrom, and a method of producing the same

SEITETSU KAGAKU CO LTD2 citations60
US4273941AJun 16, 1981

Process for producing p-hydroxybenzaldehyde

SEITETSU KAGAKU CO LTD4 citations60
US4195041AMar 25, 1980

Process for producing p-hydroxybenzaldehyde

SEITETSU KAGAKU CO LTD3 citations60
US3969205AJul 13, 1976

Process for producing 2-chloropyridine

SEITETSU KAGAKU CO LTD3 citations59
US4722917AFeb 2, 1988

Anti-I sorbent

SEITETSU KAGAKU CO LTD5 citations58
US4604349AAug 5, 1986

Process for preparing uridine diphosphate-N-acetylgalactosamine

SEITETSU KAGAKU CO LTD3 citations58
US4943655AJul 24, 1990

Salt of 5-acetyl-2-alkylbenzenesulfonic acid

SEITETSU KAGAKU CO LTD0 citations51
US4853158AAug 1, 1989

Process for preparing N,N-dialkylaniline salt of 5-acetyl-2-alkylbenzene sulfonic acid

SEITETSU KAGAKU CO LTD0 citations51
US5102858AApr 7, 1992

Heat-sensitive recording materials containing high purity bis(4-hydroxyphenyl)sulfides

SEITETSU KAGAKU CO LTD1 citations49
US5175372ADec 29, 1992

Process of producing high purity bis(4-hydroxyphenyl)sulfides and heat-sensitive recording materials containing the same

SEITETSU KAGAKU CO LTD0 citations38

HITACHI LTD

14 patents
US5011788AApr 30, 1991

Process of manufacturing semiconductor integrated circuit device and product formed thereby

HITACHI LTD22 citations92
US4746963AMay 24, 1988

Isolation regions formed by locos followed with groove etch and refill

HITACHI LTD33 citations92
US5309011AMay 3, 1994

Wafer scale or full wafer memory system, packaging method thereof, and wafer processing method employed therein

HITACHI LTD24 citations91
US5141888AAug 25, 1992

Process of manufacturing semiconductor integrated circuit device having trench and field isolation regions

HITACHI LTD15 citations82
US4819054AApr 4, 1989

Semiconductor IC with dual groove isolation

HITACHI LTD18 citations82
US5191224AMar 2, 1993

Wafer scale of full wafer memory system, packaging method thereof, and wafer processing method employed therein

HITACHI LTD17 citations81
US5200348AApr 6, 1993

Method of manufacturing semiconductor device with constant width deep groove isolation

HITACHI LTD8 citations74
US4853343AAug 1, 1989

Method for fabricating a semiconductor integrated circuit device having thick oxide films and groove etch and refill

HITACHI LTD8 citations74
US4016829AApr 12, 1977

Apparatus for crystal growth

HITACHI LTD10 citations74
US4017881AApr 12, 1977

Light emitting semiconductor device and a method for making the same

HITACHI LTD15 citations74
US3960618AJun 1, 1976

Epitaxial growth process for compound semiconductor crystals in liquid phase

HITACHI LTD17 citations74
US4933737AJun 12, 1990

Polysilon contacts to IC mesas

HITACHI LTD5 citations63
US3981764ASep 21, 1976

III-V Compound semi-conductor crystal growth from a liquid phase on a substract including filtering liquid phase

HITACHI LTD5 citations63
US5019523AMay 28, 1991

Process for making polysilicon contacts to IC mesas

HITACHI LTD0 citations52

CASIO COMPUTER CO LTD

8 patents

MITSUBISHI MATERIALS CORP

2 patents

TANABE HIDENORI

1 patent

NEC CORP

1 patent

HAYASHI YOSHINORI

1 patent

KAWAMURA MASAO

1 patent

KITAMURA VALVE MFG CO LTD

1 patent

EISAI R&D MAN CO LTD

1 patent

HITACHI IND

1 patent

SHIBAURA MECHATRONICS CORP

1 patent