Inventor
CHALLA ASHOK
US40 patents
⚠️ This page may combine multiple inventors who share the name “CHALLA ASHOK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FAIRCHILD SEMICONDUCTOR
25 patentsUS7638841B2Dec 29, 2009
Power semiconductor devices and methods of manufacture
FAIRCHILD SEMICONDUCTOR106 citations99
US7393749B2Jul 1, 2008
Charge balance field effect transistor
FAIRCHILD SEMICONDUCTOR86 citations99
US7982265B2Jul 19, 2011
Trenched shield gate power semiconductor devices and methods of manufacture
FAIRCHILD SEMICONDUCTOR81 citations98
US7345342B2Mar 18, 2008
Power semiconductor devices and methods of manufacture
FAIRCHILD SEMICONDUCTOR402 citations98
US7446374B2Nov 4, 2008
High density trench FET with integrated Schottky diode and method of manufacture
FAIRCHILD SEMICONDUCTOR78 citations97
US7855415B2Dec 21, 2010
Power semiconductor devices having termination structures and methods of manufacture
FAIRCHILD SEMICONDUCTOR51 citations96
US7625799B2Dec 1, 2009
Method of forming a shielded gate field effect transistor
FAIRCHILD SEMICONDUCTOR26 citations96
US7514322B2Apr 7, 2009
Shielded gate field effect transistor
FAIRCHILD SEMICONDUCTOR39 citations96
US6696726B1Feb 24, 2004
Vertical MOSFET with ultra-low resistance and low gate charge
FAIRCHILD SEMICONDUCTOR60 citations96
US7768064B2Aug 3, 2010
Structure and method for improving shielded gate field effect transistors
FAIRCHILD SEMICONDUCTOR33 citations93
US6683363B2Jan 27, 2004
Trench structure for semiconductor devices
FAIRCHILD SEMICONDUCTOR51 citations93
US8592895B2Nov 26, 2013
Field effect transistor with source, heavy body region and shielded gate
FAIRCHILD SEMICONDUCTOR12 citations92
US7745289B2Jun 29, 2010
Method of forming a FET having ultra-low on-resistance and low gate charge
FAIRCHILD SEMICONDUCTOR18 citations92
US7713822B2May 11, 2010
Method of forming high density trench FET with integrated Schottky diode
FAIRCHILD SEMICONDUCTOR31 citations92
US7485532B2Feb 3, 2009
Method of forming trench gate FETs with reduced gate to drain charge
FAIRCHILD SEMICONDUCTOR29 citations92
US7416948B2Aug 26, 2008
Trench FET with improved body to gate alignment
FAIRCHILD SEMICONDUCTOR30 citations92
US7382019B2Jun 3, 2008
Trench gate FETs with reduced gate to drain charge
FAIRCHILD SEMICONDUCTOR33 citations92
US8963212B2Feb 24, 2015
Trench-based power semiconductor devices with increased breakdown voltage characteristics
FAIRCHILD SEMICONDUCTOR8 citations84
US8742401B2Jun 3, 2014
Field effect transistor with gated and non-gated trenches
FAIRCHILD SEMICONDUCTOR6 citations84
US9748329B2Aug 29, 2017
Trench-based power semiconductor devices with increased breakdown voltage characteristics
FAIRCHILD SEMICONDUCTOR3 citations73
US9293526B2Mar 22, 2016
Trench-based power semiconductor devices with increased breakdown voltage characteristics
FAIRCHILD SEMICONDUCTOR3 citations73
US10868113B2Dec 15, 2020
Trench-based power semiconductor devices with increased breakdown voltage characteristics
FAIRCHILD SEMICONDUCTOR2 citations72
US9391193B2Jul 12, 2016
Trench-based power semiconductor devices with increased breakdown voltage characteristics
FAIRCHILD SEMICONDUCTOR1 citations63
US9679890B2Jun 13, 2017
Junction-less insulated gate current limiter device
FAIRCHILD SEMICONDUCTOR1 citations51
US9018700B2Apr 28, 2015
Direct-drain trench FET with source and drain isolation
FAIRCHILD SEMICONDUCTOR0 citations42
YEDINAK JOSEPH A
3 patentsUS8304829B2Nov 6, 2012
Trench-based power semiconductor devices with increased breakdown voltage characteristics
YEDINAK JOSEPH A52 citations98
US8193581B2Jun 5, 2012
Trench-based power semiconductor devices with increased breakdown voltage characteristics
YEDINAK JOSEPH A10 citations92
US8564024B2Oct 22, 2013
Trench-based power semiconductor devices with increased breakdown voltage characteristics
YEDINAK JOSEPH A8 citations84
CHALLA ASHOK
3 patentsUS8143124B2Mar 27, 2012
Methods of making power semiconductor devices with thick bottom oxide layer
CHALLA ASHOK148 citations97
US8786045B2Jul 22, 2014
Power semiconductor devices having termination structures
CHALLA ASHOK14 citations90
US8936985B2Jan 20, 2015
Methods related to power semiconductor devices with thick bottom oxide layers
CHALLA ASHOK6 citations82