Inventor
TANIDA SUSUMU
JP18 patents
⚠️ This page may combine multiple inventors who share the name “TANIDA SUSUMU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
14 patentsUS5905690AMay 18, 1999
Synchronous semiconductor device having circuitry capable of surely resetting test mode
MITSUBISHI ELECTRIC CORP83 citations95
US6337814B1Jan 8, 2002
Semiconductor memory device having reference potential generating circuit
MITSUBISHI ELECTRIC CORP25 citations92
US5962868AOct 5, 1999
Semiconductor device having contact check circuit
MITSUBISHI ELECTRIC CORP23 citations92
US6031782AFeb 29, 2000
Semiconductor memory device provided with an interface circuit consuming a reduced amount of current consumption
MITSUBISHI ELECTRIC CORP25 citations91
US6034904AMar 7, 2000
Semiconductor memory device having selection circuit for arbitrarily setting a word line to selected state at high speed in test mode
MITSUBISHI ELECTRIC CORP16 citations78
US5715212AFeb 3, 1998
Semiconductor memory device comprising address transition detecting circuit having stable response characteristic for address signal conversion
MITSUBISHI ELECTRIC CORP9 citations73
US5666317ASep 9, 1997
Semiconductor memory device
MITSUBISHI ELECTRIC CORP14 citations73
US5587956ADec 24, 1996
Semiconductor memory device having function of generating boosted potential
MITSUBISHI ELECTRIC CORP7 citations73
US5574691ANov 12, 1996
Semiconductor memory device having circuit for activating predetermined rows of memory cells upon detection of disturb refresh test
MITSUBISHI ELECTRIC CORP14 citations73
US5519659AMay 21, 1996
Semiconductor memory device having circuit for activating predetermined rows of memory cells upon detection of disturb refresh test
MITSUBISHI ELECTRIC CORP13 citations73
US5631867AMay 20, 1997
Semiconductor storage device requiring short time for program voltage to rise
MITSUBISHI ELECTRIC CORP10 citations71
US5694352ADec 2, 1997
Semiconductor memory device having layout area of periphery of output pad reduced
MITSUBISHI ELECTRIC CORP3 citations63
US6285602B1Sep 4, 2001
Semiconductor memory device provided with I/O clamp circuit
MITSUBISHI ELECTRIC CORP5 citations62
US6269044B1Jul 31, 2001
Semiconductor memory device employing an abnormal current consumption detection scheme
MITSUBISHI ELECTRIC CORP1 citations51