Inventor

AKASAKI ISAMU

JP67 patents

⚠️ This page may combine multiple inventors who share the name “AKASAKI ISAMU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

AKASAKI ISAMU

TOYODA GOSEI KK

Light-emitting semiconductor device using gallium nitride compound

Gallium nitride group compound semiconductor laser diode

Substrate for growing gallium nitride compound-semiconductor device and light emitting diode

Sapphireless group III nitride semiconductor and method for making same

Light-emitting semiconductor device using gallium nitride group compound

Light-emitting semiconductor device using gallium nitride group compound

Light-emitting semiconductor device using gallium nitride group compound

Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer

Gallium nitride group semiconductor and light emitting diode comprising it and the process of producing the same

Method for producing group III nitride compound semiconductor substrates using ZnO release layers

Group III nitride compound semiconductor laser diode and method for producing same

Gallum nitride group compound semiconductor laser diode

Group III nitride compound semiconductor laser diodes

Light emitting semiconductor device using gallium nitride group compound

Method for manufacturing group III nitride compound semiconductor laser diodes

Gallium nitride group compound semiconductor

Method for producing a light-emitting semiconductor device

Methods for manufacturing a light-emitting device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD

Method of making a gallium nitride light-emitting diode

Method for making a GaN electroluminescent semiconductor device utilizing epitaxial deposition

Gallium nitride light-emitting element and method of manufacturing the same

GaN Electroluminescent semiconductor device and method for making the same

Electroluminescent element

Method of producing defectless epitaxial layer of gallium

Recording head for facsimile receivers

UNIV MEIJO

Nitride semiconductor light-emitting device

Semiconductor multilayer film mirror, vertical cavity type light-emitting element using the mirror, and methods for manufacturing the mirror and the element

Method of manufacturing n-p-n nitride-semiconductor light-emitting device, and n-p-n nitride-semiconductor light-emitting device

Nitride semiconductor multilayer film reflector and light-emitting device using the same

Light-emitting semiconductor device

LUMILEDS LIGHTING LLC

Nitride semiconductor device with reduced polarization fields

Group III-V semiconductor light emitting devices with reduced piezoelectric fields and increased efficiency

Semiconductor substrate and method for making the same

Epitaxial aluminium-gallium nitride semiconductor substrate

AGILENT TECHNOLOGIES INC

Group III-V semiconductor light emitting devices with reduced piezoelectric fields and increased efficiency

Nitride semiconductor layer structure and a nitride semiconductor laser incorporating a portion of same

Nitride semiconductor device

PIONEER ELECTRONIC CORP

Process for producing a luminous element of group III nitride semi-conductor

Compound semiconductor vapor phase epitaxial device

Method for producing a luminous element of III-group nitride

AMANO HIROSHI

Method of fabricating a gallium nitride based semiconductor device with an aluminum and nitrogen containing intermediate layer

Gallium nitride base semiconductor device

UNIV NAGOYA

Process for growing III-V compound semiconductors on sapphire using a buffer layer

Method for manufacturing a gallium nitride group compound semiconductor

UV CRAFTORY CO LTD

Filter function-equipped optical sensor and flame sensor

AKASAKI ISAMU

Light emitting semiconductor device using nitrogen-Group III compound

NAT INST FOR MATERIALS SCIENCE

Diboride single crystal substrate, semiconductor device using this and its manufacturing method

PIONEER ELECTRIC CORP

Process for producing a resonator in a semiconductor laser device

KYOCERA CORP

Semiconductor apparatus, method for growing nitride semiconductor and method for producing semiconductor apparatus

JAPAN SCIENCE & TECH CORP

Light-emitting semiconductor device using gallium nitride group compound