Inventor

NABATAME TOSHIHIDE

JP41 patents

⚠️ This page may combine multiple inventors who share the name “NABATAME TOSHIHIDE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NABATAME TOSHIHIDE

HITACHI LTD

Ferroelectric element and method of producing the same

Dielectric element and manufacturing method therefor

Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor device

Method of producing oxide dielectric element, and memory and semiconductor device using the element

Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor device

Thallium group superconducting wire

Electronic circuit component

Thin film capacitor and electronic circuit component

Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor device

Semiconductor device having a capacitor structure including a self-alignment deposition preventing film

Semiconductor device and method for manufacturing the same

Oxide superconductor, superconducting wire and coil using the same and method of production thereof

Semiconductor device and production method thereof

Method of forming capacitor with ruthenium top and bottom electrodes by MOCVD

RENESAS TECH CORP

Fabrication method for semiconductor integrated devices

Fabrication method for semiconductor integrated devices

Semiconductor device and manufacturing method thereof

Method for manufacturing a ruthenium film for a semiconductor device

Manufacturing method of semiconductor device

Semiconductor device having misfet gate electrodes with and without GE or impurity and manufacturing method thereof

Ferroelectric capacitor and semiconductor device

Semiconductor device and manufacturing method thereof

Semiconductor device and manufacturing method of the same

ROHM CO LTD

Film formation apparatus

Method of fabricating a metal oxynitride thin film that includes a first annealing of a metal oxide film in a nitrogen-containing atmosphere to form a metal oxynitride film and a second annealing of the metal oxynitride film in an oxidizing atmosphere

Semiconductor device, method of manufacturing the same, and method of manufacturing metal compound thin film

Metallic compound thin film that contains high-k dielectric metal, nitrogen, and oxygen

Semiconductor device, process for producing the same and process for producing metal compound thin film

NAT INST MATERIALS SCIENCE

Thin-film transistor and method for manufacturing same

Dryness/wetness responsive sensor

Dryness/wetness responsive sensor having first and second wires spaced 5 nm to less than 20 μm apart

Variable resistance device and method for manufacturing same

NAT INST FOR MATERIALS SCIENCE

Thin-film transistor and method for manufacturing same

Method for reducing thickness of interfacial layer, method for forming high dielectric constant gate insulating film, high dielectric constant gate insulating film, high dielectric constant gate oxide film, and transistor having high dielectric constant gate oxide film

NABATAME TOSHIHIDE

Semiconductor device and manufacturing method of the same

Manufacturing method of semiconductor device

UNIV TOHOKU

Catalytic coal gasification by utilizing chlorides

RENESAS TECHONOLOGY CORP

Fabricating method of semiconductor integrated circuits

HORIBA LTD

Metal thin film and semiconductor comprising a metal thin film

UMEZAWA NAOTO

Method for reducing thickness of interfacial layer, method for forming high dielectric constant gate insulating film, high dielectric constant gate insulating film, high dielectric constant gate oxide film, and transistor having high dielectric constant gate oxide film

RENESAS ELECTRONICS CORP

Semiconductor device and manufacturing method of the same