Inventor
CASPAR DANIEL
FR4 patents
Patents
4 patentsUS7333362B2Feb 19, 2008
Electrically erasable and programmable, non-volatile semiconductor memory device having a single layer of gate material, and corresponding memory plane
ST MICROELECTRONICS SA24 citations89
US6728135B2Apr 27, 2004
Memory cell of the famos type having several programming logic levels
ST MICROELECTRONICS SA2 citations61
US6667909B2Dec 23, 2003
Method of erasing a FAMOS memory cell and a corresponding memory cell
ST MICROELECTRONICS SA2 citations61
US6977836B2Dec 20, 2005
Memory device that can be irreversibly programmed electrically
ST MICROELECTRONICS SA1 citations47