Inventor
CHOU CHUNG-CHENG
TW178 patents
⚠️ This page may combine multiple inventors who share the name “CHOU CHUNG-CHENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
26 patentsUS9792987B1Oct 17, 2017
Resistive random access memory device
TAIWAN SEMICONDUCTOR MFG CO LTD35 citations94
US11735238B2Aug 22, 2023
Memory device
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations85
US11393512B2Jul 19, 2022
Memory device
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations85
US11024381B2Jun 1, 2021
Resistive random access memory device
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US10762960B2Sep 1, 2020
Resistive random access memory device
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10755780B2Aug 25, 2020
Memory sense amplifier with precharge
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10014469B2Jul 3, 2018
Resistive random access memory and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9679643B1Jun 13, 2017
Resistive memory device having a trimmable resistance of at least on of a driver and a sinker is trimmed based on a row location
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations84
US9608204B2Mar 28, 2017
Resistive random access memory and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9576653B1Feb 21, 2017
Fast sense amplifier with bit-line pre-charging
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US9196360B2Nov 24, 2015
Operating resistive memory cell
TAIWAN SEMICONDUCTOR MFG CO LTD14 citations84
US9625186B2Apr 18, 2017
Cooling system for 3D IC
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations83
US9281031B2Mar 8, 2016
Method and apparatus for read assist to compensate for weak bit
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations83
US9082496B2Jul 14, 2015
Method and apparatus for adaptive timing write control in a memory
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations76
US11984162B2May 14, 2024
Hybrid self-tracking reference circuit for RRAM cells
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11915754B2Feb 27, 2024
Resistive random access memory device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11557344B2Jan 17, 2023
Resistive random access memory device
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11348638B2May 31, 2022
Memory sense amplifier with precharge
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11336174B2May 17, 2022
Charge pump system with low ripple output voltage
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10991426B2Apr 27, 2021
Memory device current limiter
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10878902B2Dec 29, 2020
RRAM voltage compensation
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10726916B2Jul 28, 2020
Resistive memory device with trimmable driver and sinker and method of operations thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10482958B2Nov 19, 2019
RRAM-based monotonic counter
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10288494B2May 14, 2019
MTJ-based temperature-sensing device
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9812198B1Nov 7, 2017
Fast sense amplifier with bit-line pre-charging
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9478287B2Oct 25, 2016
Circuits and methods for detecting write operation in resistive random access memory (RRAM) cells
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
TAIWAN SEMICONDUCTOR MFG
13 patentsUS9257178B1Feb 9, 2016
Devices and methods for writing to a memory cell of a memory
TAIWAN SEMICONDUCTOR MFG16 citations93
US7038530B2May 2, 2006
Reference voltage generator circuit having temperature and process variation compensation and method of manufacturing same
TAIWAN SEMICONDUCTOR MFG31 citations93
US6862239B1Mar 1, 2005
Circuit and method for self-refresh of DRAM cells through monitoring of cell leakage currents
TAIWAN SEMICONDUCTOR MFG27 citations93
US6853579B1Feb 8, 2005
Non-refresh four-transistor memory cell
TAIWAN SEMICONDUCTOR MFG20 citations93
US6903436B1Jun 7, 2005
Multiple-time programmable electrical fuse utilizing MOS oxide breakdown
TAIWAN SEMICONDUCTOR MFG25 citations91
US7177220B2Feb 13, 2007
Refresh counter with dynamic tracking of process, voltage and temperature variation for semiconductor memory
TAIWAN SEMICONDUCTOR MFG25 citations86
US7913215B2Mar 22, 2011
Memory macro with irregular edge cells
TAIWAN SEMICONDUCTOR MFG8 citations84
US7224207B2May 29, 2007
Charge pump system with smooth voltage output
TAIWAN SEMICONDUCTOR MFG16 citations84
US7035131B2Apr 25, 2006
Dynamic random access memory cell leakage current detector
TAIWAN SEMICONDUCTOR MFG17 citations84
US9224464B2Dec 29, 2015
Memory circuit and related method
TAIWAN SEMICONDUCTOR MFG9 citations83
US7760009B2Jul 20, 2010
Power-down circuit with self-biased compensation circuit
TAIWAN SEMICONDUCTOR MFG15 citations82
US6967877B2Nov 22, 2005
Temperature detecting circuit for controlling a self-refresh period of a semiconductor memory device
TAIWAN SEMICONDUCTOR MFG10 citations74
US6958944B1Oct 25, 2005
Enhanced refresh circuit and method for reduction of DRAM refresh cycles
TAIWAN SEMICONDUCTOR MFG7 citations74
CHENG CHITING
2 patentsWANG WILLIAM
2 patentsCHANG JONATHAN TSUNG-YUNG
2 patentsKENGERI SUBRAMANI
2 patentsYEN MENG-SHIN
1 patentCHEN YI-TZU
1 patentYEN MENG SHIN
1 patentShowing the top 50 of 178 patents by PatentIndex Score.