P

Inventor

CHOU CHUNG-CHENG

TW178 patents
⚠️ This page may combine multiple inventors who share the name “CHOU CHUNG-CHENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

26 patents
US9792987B1Oct 17, 2017

Resistive random access memory device

TAIWAN SEMICONDUCTOR MFG CO LTD35 citations94
US11735238B2Aug 22, 2023

Memory device

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations85
US11393512B2Jul 19, 2022

Memory device

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations85
US11024381B2Jun 1, 2021

Resistive random access memory device

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US10762960B2Sep 1, 2020

Resistive random access memory device

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10755780B2Aug 25, 2020

Memory sense amplifier with precharge

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10014469B2Jul 3, 2018

Resistive random access memory and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9679643B1Jun 13, 2017

Resistive memory device having a trimmable resistance of at least on of a driver and a sinker is trimmed based on a row location

TAIWAN SEMICONDUCTOR MFG CO LTD11 citations84
US9608204B2Mar 28, 2017

Resistive random access memory and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9576653B1Feb 21, 2017

Fast sense amplifier with bit-line pre-charging

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US9196360B2Nov 24, 2015

Operating resistive memory cell

TAIWAN SEMICONDUCTOR MFG CO LTD14 citations84
US9625186B2Apr 18, 2017

Cooling system for 3D IC

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations83
US9281031B2Mar 8, 2016

Method and apparatus for read assist to compensate for weak bit

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations83
US9082496B2Jul 14, 2015

Method and apparatus for adaptive timing write control in a memory

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations76
US11984162B2May 14, 2024

Hybrid self-tracking reference circuit for RRAM cells

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11915754B2Feb 27, 2024

Resistive random access memory device

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11557344B2Jan 17, 2023

Resistive random access memory device

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11348638B2May 31, 2022

Memory sense amplifier with precharge

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11336174B2May 17, 2022

Charge pump system with low ripple output voltage

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10991426B2Apr 27, 2021

Memory device current limiter

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10878902B2Dec 29, 2020

RRAM voltage compensation

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10726916B2Jul 28, 2020

Resistive memory device with trimmable driver and sinker and method of operations thereof

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10482958B2Nov 19, 2019

RRAM-based monotonic counter

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10288494B2May 14, 2019

MTJ-based temperature-sensing device

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9812198B1Nov 7, 2017

Fast sense amplifier with bit-line pre-charging

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9478287B2Oct 25, 2016

Circuits and methods for detecting write operation in resistive random access memory (RRAM) cells

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73

TAIWAN SEMICONDUCTOR MFG

13 patents
US9257178B1Feb 9, 2016

Devices and methods for writing to a memory cell of a memory

TAIWAN SEMICONDUCTOR MFG16 citations93
US7038530B2May 2, 2006

Reference voltage generator circuit having temperature and process variation compensation and method of manufacturing same

TAIWAN SEMICONDUCTOR MFG31 citations93
US6862239B1Mar 1, 2005

Circuit and method for self-refresh of DRAM cells through monitoring of cell leakage currents

TAIWAN SEMICONDUCTOR MFG27 citations93
US6853579B1Feb 8, 2005

Non-refresh four-transistor memory cell

TAIWAN SEMICONDUCTOR MFG20 citations93
US6903436B1Jun 7, 2005

Multiple-time programmable electrical fuse utilizing MOS oxide breakdown

TAIWAN SEMICONDUCTOR MFG25 citations91
US7177220B2Feb 13, 2007

Refresh counter with dynamic tracking of process, voltage and temperature variation for semiconductor memory

TAIWAN SEMICONDUCTOR MFG25 citations86
US7913215B2Mar 22, 2011

Memory macro with irregular edge cells

TAIWAN SEMICONDUCTOR MFG8 citations84
US7224207B2May 29, 2007

Charge pump system with smooth voltage output

TAIWAN SEMICONDUCTOR MFG16 citations84
US7035131B2Apr 25, 2006

Dynamic random access memory cell leakage current detector

TAIWAN SEMICONDUCTOR MFG17 citations84
US9224464B2Dec 29, 2015

Memory circuit and related method

TAIWAN SEMICONDUCTOR MFG9 citations83
US7760009B2Jul 20, 2010

Power-down circuit with self-biased compensation circuit

TAIWAN SEMICONDUCTOR MFG15 citations82
US6967877B2Nov 22, 2005

Temperature detecting circuit for controlling a self-refresh period of a semiconductor memory device

TAIWAN SEMICONDUCTOR MFG10 citations74
US6958944B1Oct 25, 2005

Enhanced refresh circuit and method for reduction of DRAM refresh cycles

TAIWAN SEMICONDUCTOR MFG7 citations74

CHENG CHITING

2 patents

WANG WILLIAM

2 patents

CHANG JONATHAN TSUNG-YUNG

2 patents

KENGERI SUBRAMANI

2 patents

YEN MENG-SHIN

1 patent

CHEN YI-TZU

1 patent

YEN MENG SHIN

1 patent

Showing the top 50 of 178 patents by PatentIndex Score.